MCH6307
Abstract: No abstract text available
Text: Ordering number : ENN7080 MCH6307 P-Channel Silicon MOSFET MCH6307 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2193A [MCH6307] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65
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ENN7080
MCH6307
MCH6307]
MCH6307
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MCH6302
Abstract: No abstract text available
Text: Ordering number : ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2193A [MCH6302] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65
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ENN7132
MCH6302
MCH6302]
MCH6302
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7080 MCH6307 MCH6307 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2193A [MCH6307] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6
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ENN7080
MCH6307
MCH6307]
MCH6307/D
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N1003
Abstract: MCH6413 75531
Text: Ordering number : ENN7553 MCH6413 N-Channel Silicon MOSFET MCH6413 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193A [MCH6413] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6
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ENN7553
MCH6413
MCH6413]
N1003
MCH6413
75531
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MCH6302
Abstract: No abstract text available
Text: Ordering number : ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2193A [MCH6302] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65
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ENN7132
MCH6302
MCH6302]
MCH6302
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MCH6402
Abstract: No abstract text available
Text: Ordering number : ENN6972 MCH6402 N-Channel Silicon MOSFET MCH6402 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2193A [MCH6402] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65
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ENN6972
MCH6402
MCH6402]
MCH6402
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MCH6405
Abstract: No abstract text available
Text: Ordering number : ENN7012 MCH6405 N-Channel Silicon MOSFET MCH6405 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193A [MCH6405] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6
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ENN7012
MCH6405
MCH6405]
MCH6405
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IT05180
Abstract: MCH6406
Text: Ordering number : ENN7297 MCH6406 N-Channl Silicon MOSFET MCH6406 Ultrahigh-Speed Switching Applications Preliminary Features • unit : mm 2193A [MCH6406] 0.25 • Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 0.3 5 6 3 2 0.65 1 0.15 1.6 0.25 2.1
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ENN7297
MCH6406
MCH6406]
IT05180
MCH6406
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MCH6408
Abstract: O1002
Text: Ordering number : ENN7286 MCH6408 N-Channel Silicon MOSFET MCH6408 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193A [MCH6408] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6
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ENN7286
MCH6408
MCH6408]
MCH6408
O1002
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MARKING JH
Abstract: MCH6308
Text: Ordering number : ENN7620 MCH6308 P-Channel Silicon MOSFET MCH6308 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2193A [MCH6308] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6
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ENN7620
MCH6308
MCH6308]
MARKING JH
MCH6308
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Untitled
Abstract: No abstract text available
Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C
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MG1200FXF1US51
MG1200FXF1US51
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MG1200FXF1US51
Abstract: No abstract text available
Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C
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MG1200FXF1US51
MG1200FXF1US51
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MG1200FXF1US51
Abstract: IGBT Guide YG6260
Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E
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MG1200FXF1US51
MG1200FXF1US51
IGBT Guide
YG6260
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MG1200FXF1US51
Abstract: YG6260
Text: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C
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MG1200FXF1US51
12transportation
MG1200FXF1US51
YG6260
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6972~] N-Channel Silicon MOSFET MCH6402 'S A N Y O , Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm • Low ON-resi stance. • Ultrahigh-speed switching. • 4V drive. 2193A Specifications Absolute Maximum Ratings at Ta=25°C
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ENN6972~
MCH6402
900mm2X0
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transistor vergleichsliste
Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G
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MHT5002
Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
MHT5002
ST 2N3053
D28A9
D11C211B20
DC5501
DC6112B
MD20
MM4645
MT75
BFS86
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2SD2350
Abstract: usaf521es071m BD112 BD116 BD251 2SD234Y 2N5017 description BD145 T062 MHT5906
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
2SD2350
usaf521es071m
BD112
BD116
BD251
2SD234Y
2N5017
description BD145
T062
MHT5906
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2sa501
Abstract: MM4647 2N1508 2SA482 USAF508ES021 2SA248 2SA478 TIP14 SI342P 1700N
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
2sa501
MM4647
2SA482
USAF508ES021
2SA248
2SA478
TIP14
SI342P
1700N
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2222 NPN
Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Text: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905
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2N708
2N709
2N753
NPN50
2222 NPN
2222a NPN
2n h 2222a
2222a
2221A
npn 2907A
2369A
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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74FCT193
Abstract: 2193T 74F193
Text: QSFCT193T, Q 2193T High-Speed CMOS Presettable Synchronous 4-Bit Binary Counters QS54/74FCT193T QS54/74FCT2193T F E A TU R E S /B E N E FIT S • • • • Pin and function compatible to the 74F193 74FCT193 and 74FCT193T CMOS power levels: <7.5 mW static
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QSFCT193T,
2193T
QS54/74FCT193T
QS54/74FCT2193T
74F193
74FCT193
74FCT193T
MIL-STD-883
2193T
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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