2145MHZ Search Results

319345S12

Abstract: 165235SM12 135185SM5 0709s 12-2 3980-4900MHz 398490s12 600-1200MHz 15-17S 025050S
Contextual Info: Model Number Frequency Tuning Tuning VCC ICC Voltage Sensitivity MHz 001001SMC5TM 10-10 MHz Output 2ND Noise Power c 10 KHz (VDC) (MHz/v) (VDC) (mA) (dBm) (dBc) (dBc) 1-3.5 3 5 25 -10 -110 004004SM5 42-46 MHz 0.5-4.5 3 5 8 -3±1 -13 -118 006009SMI12 60-90MHz

single chip satellite multiswitch

Abstract: diseqc master diseqc schematic diagram receiver satellite schematic diagram receiver data circuit satellite MultiSwitch sat MAX12005 DISEQC SWITCH MAX12005ETM DISEQC SWITCH DATASHEET
Contextual Info: 19-5554; Rev 0; 9/10 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4460-xx-xnnnS Series HUW0424131-01C August 9, 2006 Preliminary Specification of 1.51µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4460-xx-xnnnS Series

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx Series HUW0424129-01B August 10, 2006 Preliminary Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx Series RoHS Compliant Page 1 of 7

schematic diagram receiver data circuit satellite

Abstract: DISEQC SWITCH single chip satellite multiswitch diseqc schematic diagram receiver satellite diseqc master MultiSwitch sat lnb power step up ic 0x06 sat receiver
Contextual Info: 19-5554; Rev 1; 10/11 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded

transistor 10mhz 60w

Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

UGF21030F

Abstract: UGF21030 UGF21030P 300GP
Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

PN channel MOSFET 10A

Abstract: Cree Microwave UGF21125
Contextual Info: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in

Cree Microwave

Abstract: UGF21060 UGF21060F UGF21060P
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

balun tc1-1-13m

Contextual Info: FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm Typical LO drive of 0 dBm Low LO leakage Single supply operation: 5 V @ 240 mA Exposed paddle, 4 mm x 4 mm, 24-lead LFCSP package

sumitomo connectors

Abstract: HUW0724101-01A
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4270-xx/RH2 Series HUW0724101-01A December 28, 2007 Technical Specification of 1.31µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4270-xx/RH2 Series RoHS Compliant

LTE repeater

Abstract: E4418B E4440A IFR3414 2145MHz
Contextual Info: Power Amplifier RFP-2135-49-48GD Product Features Application • GaN on SiC + Doherty Technology • High Efficiency • Solid-state Linear Design • Suitable for WCDMA/LTE • 50 Ohm Input/Output Impedance • High Reliability and Ruggedness • Built in Output Isolator

UGF21090

Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01A November 4, 2004 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series

Microwave Transmission applications

Abstract: ExceLight Communications HUW0724174-01A SLW4470 ALUMINIUM CLADDING
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx/RH2 Series HUW0724174-01A March 3, 2008 Technical Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx/RH2 Series RoHS Compliant

rt 1915

Abstract: analog laser diode 6 GHz 1550 laser diode TEC TO CAN
Contextual Info: Transmission Laser Modules KeyFeatures 7-pin package with GPO connector RF input 50Ω RF impedance InGaAsP monolithically integrated DFB laser chip 1915 LMA ANALOG 6GHz Prototype Target Specification 10mW 1.55µm Direct Modulated Analog Laser Module >6GHz

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx Series HUW0424129-01A November 4, 2004 Preliminary Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx Series Page 1 of 7 Sumitomo Electric Industries, Ltd.

Cree Microwave

Abstract: UGF21090 UGF21090F UGF21090P
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers

FAKRA

Contextual Info: PASSIVE COMPONENTS Rosenberger Asia Pacific Electronic Co., Ltd. No.3, Anxiang Street, Block B, Tianzhu Airport Industrial Zone Beijing, China 101300 Tel : +86 10 80481995 Fax : (+86 10) 80497052 Email: sales@RosenbergerAP.com Rosenberger (Shanghai) Technology Co.,Ltd.

xnnnx

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01C June 26, 2007 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series

Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLW5410 series Document No. : HUW0525039-01A Date of issue : March 8, 2006 Technical Specification of 1.47-1.61µm DFB Laser Diode Module for wireless communication system application SLW5410 series Sumitomo Electric Industries, Ltd.

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4270-xx Series HUW0424130-01B August 10, 2006 Preliminary Specification of 1.31µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4270-xx Series RoHS Compliant Page 1 of 7

laser 1310nm BUTTERFLY

Abstract: PD submount
Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLW581A series Document No. : HUW0825010-01A Date of issue : September 10, 2008 Preliminary Specification of 1.31µm DFB Laser Diode Module for wireless communication system application SLW581A series RoHS Compliant

xnnnx

Abstract: h260a 1350nm h885 HUW0724102-01A SLW4470 RH2-xnnnx
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SLW4470-xx/RH2-xnnnx Series Document No.: HUW0724102-01A Date of issue: December 28, 2007 Technical Specification of 1.27µm-1.61µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx/RH2-xnnnx Series