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    211D Search Results

    211D Result Highlights (5)

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    U90A1211D0A Amphenol Communications Solutions ExpressPort QSFP+, High Speed Input Output Connectors, CAGE ASSEMBLY. Visit Amphenol Communications Solutions
    130-3162-11D Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 6 Column, Daughtercard Module, Nickel Sulfamate. Visit Amphenol Communications Solutions
    130-5262-11D Amphenol Communications Solutions Paladin 5-Pair, 6 Column, Right Angle Receptacle, Signal Module, NiS Visit Amphenol Communications Solutions
    130-8282-11D Amphenol Communications Solutions Paladin 8-Pair, 8 Column, Right Angle Receptacle, Signal Module, NiS Visit Amphenol Communications Solutions
    U98B1211D01 Amphenol Communications Solutions CFP2, Input Output Connectors, CAGE SINGLE PORT W HS Visit Amphenol Communications Solutions
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    211D Price and Stock

    Texas Instruments TPS40211DGQR

    IC REG CTRLR MULT TOP 10MSOP
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    DigiKey TPS40211DGQR Digi-Reel 10,587 1
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    Reed Semiconductor Corp RS31211DR

    IC ELECTRONIC FUSE 8WSON
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    DigiKey RS31211DR Digi-Reel 2,980 1
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    Texas Instruments UCC27211DDAR

    IC GATE DRVR HALF-BRIDGE 8SOPWR
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    DigiKey UCC27211DDAR Cut Tape 2,209 1
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    Rochester Electronics UCC27211DDAR 1,208 1
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    TME UCC27211DDAR 1
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    Texas Instruments TPS40211DGQ

    IC REG CTRLR MULT TOP 10MSOP
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    DigiKey TPS40211DGQ Tube 1,617 1
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    Mouser Electronics TPS40211DGQ 1,922
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    Texas Instruments TPS2421-1DDA

    IC HOT SWAP CTRLR GP 8SOPWR
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    DigiKey TPS2421-1DDA Tube 484 1
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    Find more 211D price and stock on Findchips.com

    211D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2-1-1D Bourns Transformers 6PIN DIP RF WIDEBAND Original PDF
    211-D Keystone Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - BATTERY SPRING CONTACT, "C, D", .040" DIA MUSIC WIRE Scan PDF
    211D Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2-1-1DL Bourns Balun, RF/IF and RFID, MAGNETICS RF TRANSFORMER THT Original PDF

    211D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    211D

    Abstract: No abstract text available
    Text: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor


    Original     		MIL-PRF-39006/22 11-Mar-11 211D PDF

    211D

    Abstract: No abstract text available
    Text: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor


    Original     		MIL-PRF-39006/22 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 211D PDF

    211D

    Abstract: No abstract text available
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original     		Mil-PRF-39006/22 18-Jul-08 211D PDF

    Untitled

    Abstract: No abstract text available
    Text: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor


    Original     		MIL-PRF-39006/22 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    ic 2114

    Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor


    Original     		E/211F/211H/211L/211M/211N/211T/211V/211Z UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 10knductor ic 2114 ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 PDF

    Untitled

    Abstract: No abstract text available
    Text: 20W Desktop For I.T.E. ETDA-211DAxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC, C-Tick


    Original     		ETDA-211DAxx 24VDC ETDA-211DA05 ETDA-211DA06 ETDA-211DA07 ETDA-211DA09 ETDA-211DA10 ETDA-211DA15 ETDA-211DA16 ETDA-211DA18 PDF

    ic 2113

    Abstract: UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


    Original     		E/211F/211H/211L/211M/211N/211T/211V/211Z UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 ic 2113 UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 PDF

    UNR2111

    Abstract: UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor


    Original     		E/211F/211H/211L/211M/211N/211T/211V/211Z UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2111 UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119 PDF

    211D

    Abstract: TFS211D
    Text: TFS 211D.doc version 1.2 VI TELEFILTER 10.12.2003 Prelimenary Specification TFS 211D 1/5 Measurement condition Ambient temperature TA: Input power level: Terminating impedances at fc *: 23 °C 0 dBm input: 740 Ω // -7,7 pF prelimenary value output: 280 Ω // -8,8 pF (prelimenary value)


    Original     		TFS211D Pfeiffer30 211D PDF

    ETDA21

    Abstract: No abstract text available
    Text: 20W Desktop For I.T.E. ETDA-211DNxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC


    Original     		ETDA-211DNxx 24VDC ETDA-211DN05 ETDA-211DN06 ETDA-211DN07 ETDA-211DN09 ETDA-211DN10 ETDA-211DN15 ETDA-211DN16 ETDA-211DN18 ETDA21 PDF

    211D

    Abstract: No abstract text available
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original     		Mil-PRF-39006/22 08-Apr-05 211D PDF

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size （mm） Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings（Ta=25℃）


    Original     		SML-211 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT PDF

    211D

    Abstract: No abstract text available
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original     		Mil-PRF-39006/22 11-Mar-11 211D PDF

    SML211UT

    Abstract: SML-211 SML-211DT SML-211UT SML-211YT T-86
    Text: 0805<2.0 1.25 t=0.8mm> Low Current Type IF 10mA SML-211 Series Yellow Emitting Color Orange Red AlGaInP on GaAs Material Package Size(mm) 2012(0805) 2.0x1.25(t=0.8) Part No. SML-211YT SML-211WT SML-211DT Absolute Maximum Ratings (Ta=25∞C) (mW) Yellow Orange


    Original     		SML-211 SML-211YT SML-211WT SML-211DT SML-211UT SML211UT SML-211DT SML-211UT SML-211YT T-86 PDF

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original     		MIL-PRF-19500/211D MIL-PRF-19500/211C 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177, PDF

    Untitled

    Abstract: No abstract text available
    Text: SML-211DT Data Sheet SML-21 Series 2012（0805） 2.0x1.25mm（t=0.8mm） Features ・Abundant color variations with diverse luminous intensity types Color Type V U D Y W M P Specifications Part No. • SML-212VT ■ SML-210VT ■ SML-212U2T A ■ SML-211UT


    Original     		SML-211DT SML-21 SML-212VT SML-210VT SML-212U2T SML-211UT SML-212DT SML-210DT SML-212WT PDF

    Mini-Mold

    Abstract: No abstract text available
    Text: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size （mm） Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings（Ta=25℃）


    Original     		IF10mA) SML211 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT Mini-Mold PDF

    211D

    Abstract: 336 Tantalum Capacitor 135D 200D 202D MIL-PRF-39006 211D408X075B7
    Text: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum


    Original     		Mil-PRF-39006/22 18-Jul-08 211D 336 Tantalum Capacitor 135D 200D 202D MIL-PRF-39006 211D408X075B7 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM7179-4 MW50970196 TIM7179-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz


    OCR Scan     		TIM5964-8SL TIM5964-8SL MW50750196 PDF

    si2127

    Abstract: No abstract text available
    Text: TIM5359-8L FEATURES : • L O W IN T E R M O D U L A T I O N D I S T O R T I O N I M 3 = —4 5 dBc at Po = 2 8 dBm . Single Carrier Level • H IG H • H IG H G A IN G ^ B = 8. 5 d B at 5. 3 G H z to 5. 9 G Hz - B R O A D B A N D IN T E R N A L L Y M A T C H E D


    OCR Scan     		TIM5359-8L TIM5359-- si2127 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		TIM3742-8SL 2-11D1B) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM5964-8A 2-11D1B) at260 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		TIM7179-7L MW50980196 PDF