2114 SRAM STATIC RAM Search Results

2114 SRAM STATIC RAM Result Highlights (5)

Part	Manufacturer	Description
DF2B5M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
DF2B5PCT	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2)
DF2B6M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2)
DF2B7PCT	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2)
DF2B7AFS	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101

2114 SRAM STATIC RAM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Am91L24 Abstract: AM91L24B 91l24 2114 1k x 4 SRAM Am91L14 2114 1k x 16 RAM 2114 SRAM Am9124 Am9124/Am9114 am91l14 am91l24 AM9124B Contextual Info: Am9114/9124 Am9114/9124 1024 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 Am9124 pin and function compatible with Am9114 and 2114, plus 5 3 power-down feature	OCR Scan	Am9114/9124 Am9114 Am9124 --Am9124, --Am9114 MIL-STD-883, Am91L24 AM91L24B 91l24 2114 1k x 4 SRAM Am91L14 2114 1k x 16 RAM 2114 SRAM Am9124/Am9114 am91l14 am91l24 AM9124B	PDF
sram 2112 Abstract: 2114 static ram STATIC RAM 2114 Contextual Info: S-22S10R/I 64-word X4-bit parallel NON-VOLATILE RAM The S-22S10R/I is a non-volatile CM OS RAM, co m p o se d of a CM OS static RAM and a non-volatile e le ctrically erasable p ro gram m ab le m em ory E2PROM to backup the SRAM. The organization is 64-w ord x 4-bit (total 256 bits) and the	OCR Scan	S-22S10R/I 64-word S-22S10R/I X2210 D01fifi4 sram 2112 2114 static ram STATIC RAM 2114	PDF
5101 sram Abstract: HM435101 ic 5101 ram HM435101 sram CM5101 HM43 3D03 SO65 MCM5101-65 Contextual Info: MOTOROLA MCM5101 MCM51LOI 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f C M O S R A M s o ffe rs ultra lo w p o w e r and fu l ly sta tic ope ration w ith a single 5-v o lt supp ly. T he C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and	OCR Scan	MCM5101 MCM51LOI 1024-bit MCM51L01-45 MCM51L01-65 MCM5101-65 MCM5101-80 MCM51L01 5101 sram HM435101 ic 5101 ram HM435101 sram CM5101 HM43 3D03 SO65	PDF
2102 SRAM Abstract: 2112 sram seiko epson RAM IC MEMORY CARD Contextual Info: STATIC RAM O U TLIN E The SRAM IC MEMORY CARD series is made up of Static RAM chips. Memory capacity is from 64K Bytes to 1M Bytes. HE series is 16 bit wide data bus. This series featuresa built-in exchangeable battery and a mechanical write protect switch to protect	OCR Scan	RBC065HE10 RBC129HE10 RBC257HE11 RBC513HE12 RBC101HE10 RBC065, RBC129, RBC257, RBC513, RBC101 2102 SRAM 2112 sram seiko epson RAM IC MEMORY CARD	PDF
2114 1k x 4 SRAM Abstract: 2114 static ram 2114 ram 2114 SRAM sram 2114 OSC CMOS 32.768K ST2108 2063 static ram btm 330 LA 4440 Contextual Info: ST Sitronix PRELIMINARY ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES n n n n n n n n n n Totally static 65C02S CPU ROM: 1M x 8-bit RAM: 4K x 8-bit Stack: Up to 128-level deep	Original	ST2108 65C02S 128-level timer/16-bit Table13-3 Page38 Page39 Page43. Page18 2114 1k x 4 SRAM 2114 static ram 2114 ram 2114 SRAM sram 2114 OSC CMOS 32.768K ST2108 2063 static ram btm 330 LA 4440	PDF
sRAM 2116 Abstract: DPS256P8-100C DPS256P8-120C DPS256P8-150C STATIC RAM 2114 Contextual Info: DENSE-PAC M I C ROS YS TE MS 07E D \| S T S ^ I S Dense~Pac Microsystems, ine. DDDDlbM 2 \|~~ DPS256P8 CMOS SRAM 25 6K X -PRELIMINARY- D E S C R IP T IO N : The DPS256P8 is a fully static asynchronous Random Access Memory SRAM and is organized as 128Kx 8.	OCR Scan	DPS256P8 128Kx or-150ns 35-Pin, DPS256P8-100C 100ns DPS256P8-120C 120ns DPS256P8-150C sRAM 2116 STATIC RAM 2114	PDF
RAM EDAC SEU Abstract: SRAM edac AC304 sram 2114 edac 2114 SRAM RAM SEU RAM64k36 7 bit hamming code hamming code Contextual Info: Application Note AC304 Simulating SEU Events in EDAC RAM Introduction The Actel RTAX-S Field Programmable Gate Array FPGA provides embedded user static RAM in addition to single-event-upset (SEU)-enhanced logic, including embedded triple-module redundancy (TMR)	Original	AC304 RAM EDAC SEU SRAM edac AC304 sram 2114 edac 2114 SRAM RAM SEU RAM64k36 7 bit hamming code hamming code	PDF
2114 static ram Abstract: sram 2114 2114 ram RAM 2114 psg010 2114 1k x 4 SRAM 2114 SRAM 4 bit dac OSC CMOS 32.768K 2063 static ram Contextual Info: ST ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. This is not a final specification. Some parameters are subject to change. 1. FEATURES Totally static RISC CPU	Original	ST2108 128-level timer/16-bit 2114 static ram sram 2114 2114 ram RAM 2114 psg010 2114 1k x 4 SRAM 2114 SRAM 4 bit dac OSC CMOS 32.768K 2063 static ram	PDF
QN132 Abstract: 1K x4 static ram FG144 VQ100 2114 1kx4 Contextual Info: P r o du c t B r i e f IGLOOTM Low Power Flash FPGAs with FlashFreezeTM Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 5 µW Power Consumption in FlashFreeze Mode 1.2 V or 1.5 V Core Voltage for Low Power	Original	51700082PB-5/5 QN132 1K x4 static ram FG144 VQ100 2114 1kx4	PDF
Contextual Info: P r o du c t B r i e f IGLOOTMe Low Power Flash FPGAs with Flash*FreezeTM Technology Features and Benefits Low Power • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation Low Power Active Capability Enables Active FPGA	Original	130-nm, 51700083PB-2/5	PDF
A-18 Abstract: MPC555 QADC64 272-Pin Contextual Info: LIST OF TABLES Table 2-1 2-2 2-3 2-4 2-5 2-6 Title Page MPC555 Pin Functions for 272-Pin PBGA . 2-3 Pin Functionality Table . 2-6	Original	MPC555 272-Pin MPC555 A-18 QADC64	PDF
2114 1kx4 Abstract: RAM 2114 2114 SRAM 1K x4 static ram QN132 Contextual Info: P r o du c t B r i e f IGLOOTM Low Power Flash FPGAs with FlashFreezeTM Technology Features and Benefits • • • • • • • 5 µW Power Consumption in FlashFreeze Mode 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation	Original	130-nm, 51700082PB-2/8 2114 1kx4 RAM 2114 2114 SRAM 1K x4 static ram QN132	PDF
AGL1000 Contextual Info: P r o du c t B r i e f IGLOOTM Low Power Flash FPGAs with FlashFreezeTM Technology Features and Benefits • • • • • • • 5 µW Power Consumption in FlashFreeze Mode 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation	Original	130-nm, 51700082PB-3/1 AGL1000	PDF
Contextual Info: v1.2 IGLOOe Low-Power Flash FPGAs with FlashFreeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation FlashFreeze Technology Enables Ultra-Low Power	Original		PDF

A20 1453 Abstract: A-20 MPC555 QADC64 Contextual Info: Paragraph Number 2-1 2-2 2-3 2-4 2-5 2-6 LIST OF TABLES Page Number MPC555 Pin Functions for 272-Pin PBGA . 2-4 Pin Functionality Table . 2-7	Original	MPC555 272-Pin MPC555 A20 1453 A-20 QADC64	PDF
MN 2114 static ram Abstract: a12t 2116 static ram LA12T Contextual Info: LOGIC DEVICES INC BhE D • S S b S T Q S OOOlOafi M ■ _ 8K x 8 Static RAM with Flash Clear Low FEATURES; L7C186/L7CL186 power O iS G R IP T lO N □ 8K x 8 CMOS Static RAM with High Speed Flash Clear □ Auto-Powerdown Design	OCR Scan	L7CI86) L7CL186) 1DT7165 28-pin 32-pin L7C186/L7CL186 MN 2114 static ram a12t 2116 static ram LA12T	PDF
Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM r ^ M T R O N Product Specification Features Architecture • 4KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes	OCR Scan	DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced M2M32SJ) DM2M36SJ	PDF
2114 1k x 4 SRAM Abstract: AGLN010 Contextual Info: Advance v0.2 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS	Original		PDF
ProASIC3 Abstract: A3P1000 application notes FIPS192 A3P060 A3P250 ACTEL Actel a3p125 FIPS-192 A3P1000 ProASIC3 Flash Family Contextual Info: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)	Original	AEC-Q100 ProASIC3 A3P1000 application notes FIPS192 A3P060 A3P250 ACTEL Actel a3p125 FIPS-192 A3P1000 ProASIC3 Flash Family	PDF
AGL400 Abstract: Actel part number ARMv6 QN132 FG144 VQ100 m1agl1000 D-FLIPFLOP AGL015 Contextual Info: v1.2 IGLOO Low-Power Flash FPGAs with FlashFreeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in FlashFreeze Mode	Original	AGL250 AGL400 Actel part number ARMv6 QN132 FG144 VQ100 m1agl1000 D-FLIPFLOP AGL015	PDF
vhdl code hamming Abstract: vhdl coding for hamming code vhdl code for pipelined matrix multiplication vhdl code for matrix multiplication vhdl code hamming ecc parity ECC SEC-DED Hamming code SRAM verilog code for matrix multiplication SECDED RTAX2000S vhdl code SECDED Contextual Info: Application Note AC273 Using EDAC RAM for RadTolerant RTAX-S FPGAs and Axcelerator FPGAs Applies to EDAC Core from Libero IDE v7.1 or Older Introduction Actel's newest designed-for-space Field Programmable Gate Array FPGA family, the RTAX-S, is a highperformance, high-density antifuse-based FPGA with embedded user static RAM (SRAM). Based on Actel's	Original	AC273 l011011101101 vhdl code hamming vhdl coding for hamming code vhdl code for pipelined matrix multiplication vhdl code for matrix multiplication vhdl code hamming ecc parity ECC SEC-DED Hamming code SRAM verilog code for matrix multiplication SECDED RTAX2000S vhdl code SECDED	PDF
DM 0365 R pin EQUIVALENT Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM ^ I M T R O I M Features Architecture rile DM2M iliSJ achieves 2Mb x 36 density by mounting 18 1M x i I.DRAVls, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer substrate. Sixteen	OCR Scan	DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 28-pin DM2202 DM2212 DM2M32SJ DM2202 DM2212J-XX, DM2M32SJ) C1-C18 DM 0365 R pin EQUIVALENT	PDF
A3PE600 Contextual Info: v1.0 ProASIC3E Flash Family FPGAs with Optional Soft ARM® Support Features and Benefits High Capacity • 600 k to 3 Million System Gates • 108 to 504 kbits of True Dual-Port SRAM • Up to 620 User I/Os Reprogrammable Flash Technology • • • •	Original	130-nm, 64-Bit 128-Bit A3PE600	PDF
RAM512X18 Abstract: testbench verilog for 16 x 8 dualport ram FIFO4KX18 tms fifo 4bit AC237 sample vhdl code for memory write 2114 static ram 096x1 Contextual Info: Application Note AC237 Fusion SRAM/FIFO Blocks Introduction As design complexity grows, greater demands are placed upon an FPGA's embedded memory. Actel Fusion devices provide the flexibility of true dual-port as well as two-port SRAM blocks. The embedded memory,	Original	AC237 608-bit RAM512X18 testbench verilog for 16 x 8 dualport ram FIFO4KX18 tms fifo 4bit AC237 sample vhdl code for memory write 2114 static ram 096x1	PDF

2114 SRAM STATIC RAM Search Results

2114 SRAM STATIC RAM Result Highlights (5)

2114 SRAM STATIC RAM Datasheets Context Search

Am91L24

sram 2112

5101 sram

2102 SRAM

2114 1k x 4 SRAM

sRAM 2116

RAM EDAC SEU

2114 static ram

QN132

A-18

2114 1kx4

AGL1000

A20 1453

MN 2114 static ram

2114 1k x 4 SRAM

ProASIC3

AGL400

vhdl code hamming

DM 0365 R pin EQUIVALENT

A3PE600

RAM512X18