Siliconix AN104
Abstract: AN104 J210 J211 J212
Text: J210/211/212 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J211 -2.5 to -4.5 -25 6 7 J212 -4 to -6 -25 7 15 J211, For applications information see AN104, page 21. Features
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J210/211/212
AN104,
J211/212,
P-37404--Rev.
Siliconix AN104
AN104
J210
J211
J212
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SI2301DS* equivalent
Abstract: AP-211 CMPWR025 CMPWR100 CMPWR150 FDN338P Si2301DS toshiba MOTHERBOARD CIRCUIT diagram ACPI CIRCUIT DIAGRAM "network interface cards"
Text: AP-211 CALIFORNIA MICRO DEVICES Instantly Available PCI Card Power Management Introduction Today, PCs need to remain constantly connected to the outside world, but at the same time consume minimum power. Even when looking idle, it is still possible to receive a message
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AP-211
CMPWR100
SI2301DS* equivalent
AP-211
CMPWR025
CMPWR150
FDN338P
Si2301DS
toshiba MOTHERBOARD CIRCUIT diagram
ACPI CIRCUIT DIAGRAM
"network interface cards"
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transistor j210
Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Text: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.
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J210/211/212
AN104,
J211/212,
P-37404--Rev.
04-Jul-94
transistor j210
J210
Siliconix JFETs Dual
Siliconix N-Channel JFETs
AN104
J211
J212
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AN301
Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
Text: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
AN301
SD211
SD211DE
SD213DE
SD214
SD215DE
SST211
SST213
SST215
SST215 SILICONIX
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Si5403DC
Abstract: No abstract text available
Text: SPICE Device Model Si5403DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5403DC
S-81934-Rev.
25-Aug-08
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SiE848DF-T1-E3
Abstract: S-82581-Rev SIE848DF
Text: New Product SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE848DF
18-Jul-08
SiE848DF-T1-E3
S-82581-Rev
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74383
Abstract: 15-V
Text: SPICE Device Model SUM36N20-54P Vishay Siliconix N-Channel 200-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM36N20-54P
S-70426Rev.
12-Mar-07
74383
15-V
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74219
Abstract: SiE812DF 74219+ram
Text: SPICE Device Model SiE812DF Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE812DF
S-62042Rev.
16-Oct-06
74219
74219+ram
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SiE848DF-T1-E3
Abstract: SiE848DF-T1-GE3 SIE848 68821
Text: New Product SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE848DF
2002/95/EC
18-Jul-08
SiE848DF-T1-E3
SiE848DF-T1-GE3
SIE848
68821
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Si2309CDS
Abstract: No abstract text available
Text: SPICE Device Model Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2309CDS
18-Jul-08
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15-V
Abstract: 74383
Text: SPICE Device Model SUM36N20-54P Vishay Siliconix N-Channel 200-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM36N20-54P
18-Jul-08
15-V
74383
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a1718
Abstract: No abstract text available
Text: SPICE Device Model Si5403DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5403DC
18-Jul-08
a1718
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74219
Abstract: SiE812DF
Text: SPICE Device Model SiE812DF Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE812DF
18-Jul-08
74219
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74350
Abstract: 15-V SUP36N20-54P SUP36N20
Text: SPICE Device Model SUP36N20-54P Vishay Siliconix N-Channel 200-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP36N20-54P
18-Jul-08
74350
15-V
SUP36N20-54P
SUP36N20
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IRFF210
Abstract: IRFF211 IRFF212
Text: löE D SILICONIX INC • ÖSS473S QOmflQl 0 ■ IRFF210/211/212/213 f T ’Silfco n ix JJm in c o rp o ra te d N-Channel Enhancement Mode Transistors "T-IA -07 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS 'W •d (A) IRFF210 200 1.5 2.2 IRFF211
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E5473S
IRFF210/211/212/213
O-205AF
IRFF210
IRFF211
IRFF212
1RFF213
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H12-200
Abstract: h1-5051 HI-5046 RC4531
Text: PA R T N U M BER M AN UFAC TURER Raytheon Signetics Silicon General Siliconix H A R R IS E Q U IV A L E N T RM/RC1556A HA-2600/2605 RM/RC4131 HA-2600/2605 RM/RC4132 HA-2700/2705 RM/RC4531 HA-2500/2505 RM/RC4558 HA-2650/2655 111/211/311 HA-2111/2211/2311 1488
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RM/RC1556A
HA-2600/2605
RM/RC4131
RM/RC4132
HA-2700/2705
RM/RC4531
HA-2500/2505
RM/RC4558
HA-2650/2655
H12-200
h1-5051
HI-5046
RC4531
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harris 201
Abstract: H12-200-2 rc4558 H1200 HA-2650 Signetics 2605 HI-5051 dg506 HI5043 DG507
Text: PART NUMBER M ANUFACTURER Raytheon Signetics Silicon General Siliconix H A R R IS E Q U IV A L E N T RM /R C1556A HA-2600/2605 RM/RC4131 HA-2600/2605 RM /RC4132 HA-2700/2705 RM/RC4531 H A-2500/2505 RM /RC4558 HA-2650/2655 111/211/311 H A -2 1 11/2211/2311
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RM/RC1556A
HA-2600/2605
RM/RC4131
RM/RC4132
HA-2700/2705
RM/RC4531
HA-2500/2505
RM/RC4558
HA-2650/2655
harris 201
H12-200-2
rc4558
H1200
HA-2650
Signetics 2605
HI-5051
dg506
HI5043
DG507
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Siliconix Dual N-Channel JFETs
Abstract: J210 211 siliconix
Text: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.
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J210/211/212
seeAN104,
J211/212,
P-37404--
P-37404--Rev.
Siliconix Dual N-Channel JFETs
J210
211 siliconix
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K212 jfet
Abstract: K212-18 Siliconix Dual N-Channel JFETs 2N5911-12 2N5912CHP K211-18 U257 U257CHP U312 U312CHP
Text: I Cl n-channel JFETs designed fo r d s S . Silicon ix Performance Curves NZF See Section 5 • G en eral Purpose A m plifiers B EN EFITS I • High Gain G ps = 7000 ¿imho Minimum K 211-18, K212-18 High Input Impedance I q SS = 100 pA Maximum c iss = 5 pF Typical
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K211-18,
K212-18)
K212 jfet
K212-18
Siliconix Dual N-Channel JFETs
2N5911-12
2N5912CHP
K211-18
U257
U257CHP
U312
U312CHP
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1488 1489 standard
Abstract: Li-116 HA-2700 teledyne philbrick 1430 ca3130 replacement ma702 MC1554 HARRIS / HA1 LM 1436 MPC16S
Text: CROSSREFERENCE Linear and Interface Devices PART NUM BER MANUFACTURER Advanced Micro Devices Analog Devices Burr Brown Datel Exar H A R R IS E Q U IV A L E N T N O T ES A M 1 11/211/3111 HA-2111/2211/2311 A1 A M 118/318 HA-2510/2515 B2 AM 715 HA-2520/2525
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AM111/211/3111
HA-2111/2211/2311
HA-2510/2515
AM715
HA-2520/2525
AM1660
HA-2500/2505
HA-2600/2605
HA-2700/2705
HD-1488
1488 1489 standard
Li-116
HA-2700
teledyne philbrick 1430
ca3130 replacement
ma702
MC1554
HARRIS / HA1
LM 1436
MPC16S
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1488 1489 standard
Abstract: MC1533 MC1554 ma702 AD7513 MPC16S Exar cross HA2-2055 CMP-01 Solitron Devices
Text: CROSSREFERENCE Linear and Interface Devices PART NUM BER MANUFACTURER Advanced Micro Devices Analog Devices Burr Brown Datel Exar H A R R IS E Q U IV A L E N T N O T ES A M 1 11/211/3111 HA-2111/2211/2311 A1 A M 118/318 HA-2510/2515 B2 AM 715 HA-2520/2525
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AM111/211/3111
HA-2111/2211/2311
HA-2510/2515
AM715
HA-2520/2525
AM1660
HA-2500/2505
HA-2600/2605
HA-2700/2705
HD-1488
1488 1489 standard
MC1533
MC1554
ma702
AD7513
MPC16S
Exar cross
HA2-2055
CMP-01
Solitron Devices
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SILICONIX SD21
Abstract: ST211 sst211 sot-143 SST211 SD 214DE siliconix SST213 213D to253 SST215 SILICONIX CD+Laser+pickup+kss+213D
Text: T e m ic SD211DE/SST211 Series Siliconix N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary P a rt N u m b er V br DS M in (V) VGS(th) M ax (V) «•DS(on) M ax (Q ) e « « M a x (p F ) toN M a x (n s) SD211DE 30 1.5
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
SILICONIX SD21
ST211
sst211 sot-143
SD 214DE siliconix
213D
to253
SST215 SILICONIX
CD+Laser+pickup+kss+213D
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DG211
Abstract: ADG211A ADG212A DG21 DG212 tcn-90 a24v
Text: - 322 D G 2 1 1, 2 1 2 S P S T CM O S 7 t c ^ • X'f {vn y k oo^) • S S ilic o n ix * pdp « m m « DG211 it « Siliconix AD « DG212 A D G 211A A D G 212A N JTJ2I1 fiQÄ j ( V + = 15V, G N D = 0 , T„ = 25"C) DG211/212 l£ % iP'l Æ & # ftÄ ^/liVylLfXT
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DG211
DG212
ADG211A
ADG212A
DG211/212
DG211)
DG212)
ADG212A
DG21
DG212
tcn-90
a24v
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Untitled
Abstract: No abstract text available
Text: SÌ6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V o s <VJ Rd S<ON| (3 ) >d (A) 0.020 @ VGS = -4 .5 V ±6.5 0.030 @ VGS = -2.5 V ±5.2 e 't'V ' A -20 s* Q TSSOP-8 O il Source Pins 2, 3 ,6 and 7 must be tied common. It Top View Ô D P-Channel MOSFET
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6463DQ
S-51477--
17-Feb-97
S86463DQ_
17-Fet
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