2106F Search Results

2106F

Abstract: working of voltage doubler 2108F 2102F 2102UF 2104F 2104UF 2106UF 2108UF 2110UF
Contextual Info: b3E D tsimas 4 00004?^ m i 2102 2104 2106 2108 2110 CENTER TAP OR DOUBLER HIGH CURRENT 70nS*150nS»3000nS RECOVERY = 21 - 25A Positive Center Tap AC N W AC Negative Center Tap AC H * N AC 2102F 2104F 2106F 2108F 211OF 2102UF 2104UF 2106UF 2108UF 2110UF Assemblies available with

Contextual Info: 2106FP Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current25 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9

Contextual Info: b3E D tsimas 4 00004?^ m i CENTER TAP OR DOUBLER HIGH CURRENT 70nS*150nS»3000nS RECOVERY 2102 2104 2106 2108 2110 = 21 - 25A Positive Center Tap AC N W AC Negative Center Tap AC H * N AC 2102F 2104F 2106F 2108F 211 OF 2102UF 2104UF 2106UF 2108UF 2110UF Assemblies available with

Contextual Info: 2106F Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9

Contextual Info: 2106FN Diodes Center-Tapped Negative CA HS Rectifier I(O) Max.(A) Output Current25 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9

2106F

Abstract: RN1101FS RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS ib20
Contextual Info: RN2101FS~2106FS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,2106FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

Contextual Info: TOSHIBA RN2101F-2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, 2106F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors

Contextual Info: VOLTAGE MULTIPLIERS INC S7E D • ‘ISIMÛSM Q00024Q SIS «VIII CENTER TAP OR DOUBLER 70nS • 150nS • 3000nS Recovery ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Vrwm Reverse Current @ VRWM

2106F

Abstract: RN2101FRN2106F RN2101F 2104F RN1101F RN1106F RN2102F RN2103F RN2104F RN2105F
Contextual Info: RN2101F~2106F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101F,RN2102F,RN2103F RN2104F,RN2105F,2106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design

TRANSISTOR MARKING YB

Contextual Info: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN2101FS~2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05

Contextual Info: RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm

Contextual Info: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm

RN2103FV

Abstract: RN2104FV RN2105FV RN2106FV RN1101FV RN1106FV RN2101FV RN2102FV
Contextual Info: RN2101FV~2106FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, 2106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 Built-in bias resistors

2106F

Abstract: 2104F RN1101F RN1106F RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F
Contextual Info: RN2101F~2106F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101F,RN2102F,RN2103F RN2104F,RN2105F,2106F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design

RN1101FS

Abstract: RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS
Contextual Info: RN2101FS~2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

2106F

Abstract: 2104F RN2101F RN1101F RN1106F RN2102F RN2103F RN2104F RN2105F RN2106F
Contextual Info: RN2101F~2106F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101F,RN2102F,RN2103F RN2104F,RN2105F,2106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design

RN1101FT

Abstract: RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~2106FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, 2106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

2106F

Contextual Info: VOL TAG E M U L T I P L I E R S INC 34E » • 'ISIMÔSM G D G 0 2 1 3 3 ■ VMI '“" P ‘2 3 -0 ' 7 Center Tap or Doubler Da ta subject to change w ithout notice. M A X IM U M R A T IN G S A N D C H A R A C T E R IS T IC S PART WORKING NUMBER REVERSE VOLTAGE

RN2101FT

Abstract: RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~2106FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, 2106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

2106f

Abstract: RN2101F 2104F RN1101F RN1106F RN2102F RN2103F RN2104F RN2105F RN2106F
Contextual Info: RN2101F~2106F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101F,RN2102F,RN2103F RN2104F,RN2105F,2106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design

TRANSISTOR MARKING YB

Abstract: RN2101FT RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1101FT RN1106FT RN2102FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

RN2101FT

Abstract: RN1101FT RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT
Contextual Info: RN1101FT~RN1106FT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1101FT,RN1102FT,RN1103FT RN1104FT,RN1105FT,RN1106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用