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    20N60S5 Search Results

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    20N60S5 Price and Stock

    Infineon Technologies AG SPP20N60S5

    MOSFET N-CH 650V 20A TO220-3
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    DigiKey SPP20N60S5 Tube 500
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    Mouser Electronics SPP20N60S5
    • 1 $4.46
    • 10 $4.42
    • 100 $2.45
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    TME SPP20N60S5 47 1
    • 1 $7.18
    • 10 $5.74
    • 100 $5.16
    • 1000 $4.81
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    ComSIT USA SPP20N60S5 633
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    Win Source Electronics SPP20N60S5 1,151
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    • 10 $5.4166
    • 100 $3.6111
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    Infineon Technologies AG SPB20N60S5ATMA1

    MOSFET N-CH 600V 20A TO263-3
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    DigiKey SPB20N60S5ATMA1 Cut Tape 1
    • 1 $5.37
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    SPB20N60S5ATMA1 Digi-Reel 1
    • 1 $5.37
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    SPB20N60S5ATMA1 Reel 1,000
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    EBV Elektronik SPB20N60S5ATMA1 1,000 16 Weeks 1,000
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    New Advantage Corporation SPB20N60S5ATMA1 1,000 1
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    Infineon Technologies AG SPW20N60S5FKSA1

    MOSFET N-CH 600V 20A TO247-3
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    DigiKey SPW20N60S5FKSA1 Tube 240
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    Avnet Americas SPW20N60S5FKSA1 Tube 15 Weeks 30
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    EBV Elektronik SPW20N60S5FKSA1 16 Weeks 240
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    Vyrian SPW20N60S5FKSA1 313
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    Infineon Technologies AG SPP20N60S5HKSA1

    HIGH POWER_LEGACY
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    DigiKey SPP20N60S5HKSA1 Tube
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    Avnet Americas SPP20N60S5HKSA1 Tube 500
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    Win Source Electronics SPP20N60S5HKSA1 1,040
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    • 100 $3.6111
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    onsemi NTHL120N60S5Z

    NTHL120N60S5Z - POWER MOSFET, N-CHANNEL, SUPERFET V, EASY DRIVE, 600 V, 28 A, 120 M , TO-247 POWER MOSFET, N-CHANNEL, SUPERFET V, EASY DRIVE, 600 V, 28 A, 120 M , TO-247 - Rail/Tube (Alt: NTHL120N60S5Z)
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    Avnet Americas NTHL120N60S5Z Tube 0 Weeks, 2 Days 211
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    NTHL120N60S5Z Tube 19 Weeks 450
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    Mouser Electronics NTHL120N60S5Z 386
    • 1 $6.63
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    Newark NTHL120N60S5Z Bulk 441 1
    • 1 $8.66
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    Rochester Electronics NTHL120N60S5Z 6,215 1
    • 1 $3.3
    • 10 $3.3
    • 100 $3.1
    • 1000 $2.81
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    Richardson RFPD NTHL120N60S5Z 450
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    EBV Elektronik NTHL120N60S5Z 21 Weeks 30
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    Flip Electronics NTHL120N60S5Z 5,085
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    New Advantage Corporation NTHL120N60S5Z 360 1
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    Find more 20N60S5 price and stock on Findchips.com

    20N60S5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Text: 20N60S5 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5 PDF

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5 PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
    Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances


    OCR Scan     		SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor n60s5 PDF

    transistor 20N60s5

    Abstract: SPW20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5 PDF

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5 PDF

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Text: 20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original     		SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60 PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent
    Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V • Improved periodic avalanche rating RDS(on) 0.19


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent PDF

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5 PDF

    20N60S5

    Abstract: No abstract text available
    Text: SIEMENS 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5 PDF

    20n60s5

    Abstract: smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751 PDF

    20N60S5

    Abstract: SPP20N60S5 Q67040-S4751 SPB20N60S5 20n60s
    Text: 20N60S5 20N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge G,1 S,3 • Improved periodic avalanche rating • Extreme dv/dt rated COOLMOS


    Original     		SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 SPP20N60S5 P-TO220-3-1 P-TO263-3-2 20N60S5 Q67040-S4751 20N60S5 Q67040-S4751 SPB20N60S5 20n60s PDF

    20n60s5

    Abstract: SPP20N60S5 4252 spp20n60 Q67040-S4751 SPB20N60S5
    Text: 20N60S5 20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 220 · Ultra low gate charge · Improved periodic avalanche rating · Extreme dv/dt rated · Optimized capacitances


    Original     		SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 P-TO220-3-1 20N60S5 Q67040-S4751 P-TO263-3-2 SPP20N60S5 20n60s5 4252 spp20n60 Q67040-S4751 SPB20N60S5 PDF

    20n60s5

    Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor
    Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4751 Q67040-S4171 20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor PDF

    75V-8V

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5 75V-8V PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
    Text: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘


    OCR Scan     		SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 SPB20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O smd diode sm i7 siemens 350 98 Q67040-S4751 PDF

    20N60S5 TO247

    Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
    Text: 20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 TO247 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent siemens 350 98 SPW20 20n60s PDF

    20N60S5 TO247

    Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 009-134-A O-247 20N60S5 TO247 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5
    Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances


    OCR Scan     		SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20N60S5 transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 PDF

    SPP20N60S5

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5 PDF

    20n60s

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB20N60S5 P-TO263-3-2 20N60S5 SPB20N60S5 Q67040-S4171 20n60s PDF

    Untitled

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5 PDF

    20N60S5

    Abstract: 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20N60S5 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s PDF

    SPW20N60S5

    Abstract: No abstract text available
    Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5 PDF

    20n60s5

    Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF