20N60Q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 20N60Q IXFT 20N60Q VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 W trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR
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20N60Q
250ns
O-247
20N60Q
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 20N60Q IXFT 20N60Q VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 W trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR
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20N60Q
20N60Q
250ns
O-247
O-268
O-268AA
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20N60Q
Abstract: transistor N 343 AD
Text: IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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20N60Q
250ns
O-247
O-268
728B1
123B1
728B1
065B1
20N60Q
transistor N 343 AD
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25
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20N60Q
20N60Q
250ns
O-247
O-268
O-268
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings
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20N60Q
20N60Q
250ns
O-247
O-268
O-268
728B1
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Untitled
Abstract: No abstract text available
Text: IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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20N60Q
250ns
O-247
O-268
728B1
123B1
728B1
065B1
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1146
C1162
C1278
C1106
C1156
ixfh 60N60
C1142
c1238
C1104
ixfn 26n60
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information V.DSS IXFH 20N60Q IXFT 20N60Q HiPerFET Power MOSFETs = D25 Q Class DS on = 600 V 20 A 0.35 Q trr < 250ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Maximum Ratings Symbol Test C onditions
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20N60Q
250ns
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IXYS DS 145
Abstract: RFT e 355 d
Text: IQIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 20N60Q IXFT 20N60Q DSS D25 R Q Class DS on — — — 600 V 20 A 0.35 Q trr < 250ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Symbol dv/dt Test Conditions
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20N60Q
20N60Q
250ns
O-247
O-268
IXYS DS 145
RFT e 355 d
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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