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onsemi FCP20N60 MOSFET N-CH 600V 20A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCP20N60	Tube	6,207		1	1 $6.03 10 $6.03 100 $6.03 1000 $2.45388 10000 $2.45388	Buy Now
Avnet Americas	FCP20N60	Tube	500	17 Weeks	50	1 - 10 - 100 $2.36518 1000 $2.30953 10000 $2.30953	Buy Now
	FCP20N60	Bulk		7 Weeks, 5 Days	1	1 $4.19 10 $4.08 100 $3.27 1000 $3.27 10000 $3.27	Buy Now
Newark	FCP20N60	Bulk	994		1	1 $2.31 10 $2.31 100 $2.31 1000 $2.31 10000 $2.31	Buy Now
	FCP20N60	Bulk	500		50	1 - 10 - 100 $3.27 1000 $3.06 10000 $3.06	Buy Now
Richardson RFPD	FCP20N60				1,000	1 - 10 - 100 - 1000 $2.45 10000 $2.45	Buy Now
Avnet Silica	FCP20N60		950	18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	FCP20N60		400	19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	FCP20N60		4,044		1	1 $6.85 10 $6.85 100 $4.37 1000 $3.32 10000 $3.32	Buy Now
Micro Commercial Components MSJL20N60A-TP N-CHANNEL MOSFET,DFN8080A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJL20N60A-TP	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.58863	Buy Now
	MSJL20N60A-TP	Cut Tape	2,920		1	1 $4.5 10 $2.972 100 $4.5 1000 $1.61488 10000 $1.61488	Buy Now
Micro Commercial Components MSJPFR20N60-BP N-CHANNEL MOSFET,TO-220AB(H)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPFR20N60-BP	Tube	2,000		1	1 $3.32 10 $2.16 100 $3.32 1000 $1.12946 10000 $1.05	Buy Now
STMicroelectronics STFI20N65M5 MOSFET N CH 650V 18A I2PAKFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STFI20N65M5	Tube	1,453		1	1 $4.96 10 $4.96 100 $4.96 1000 $1.8125 10000 $1.8125	Buy Now
STMicroelectronics STI20N65M5 MOSFET N-CH 650V 18A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STI20N65M5	Tube	1,000		1	1 $3.13 10 $2.052 100 $3.13 1000 $1.31324 10000 $1.31324	Buy Now
Avnet Americas	STI20N65M5	Tube		14 Weeks	1,000	1 - 10 - 100 - 1000 $1.31325 10000 $1.25071	Buy Now
Mouser Electronics	STI20N65M5		982			1 $2.03 10 $1.61 100 $1.35 1000 $1.31 10000 $1.28	Buy Now
Newark	STI20N65M5	Bulk	64		1	1 $3.07 10 $2.62 100 $2.17 1000 $1.96 10000 $1.96	Buy Now
STMicroelectronics	STI20N65M5		982		1	1 $1.99 10 $1.58 100 $1.32 1000 $1.29 10000 $1.29	Buy Now

Avnet Silica	STI20N65M5		950	15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STI20N65M5			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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20N6 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

20N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
20N60B Abstract: s9011 Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	PDF	20N60B O-24s 20N60B s9011
20n60B Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	PDF	20N60B O-220AB O-263 20n60B
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	PDF	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60
mosfet 20n60 Abstract: 20n60 Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	PDF	20N60 20N60 QW-R502-587 mosfet 20n60
Untitled Abstract: No abstract text available Text: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6912/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 400 mm reflector position Sde 100 . 400 mm adjusting range reflector operating range	Original	PDF	20N6912/S35A
Untitled Abstract: No abstract text available Text: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	PDF	20N6903/S35A
Untitled Abstract: No abstract text available Text: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	PDF	20N6903/S35A
Untitled Abstract: No abstract text available Text: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	PDF	20N6903/S35A
Untitled Abstract: No abstract text available Text: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6914/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 200 mm reflector position Sde 40 . 200 mm adjusting range reflector operating range	Original	PDF	20N6914/S35A
Untitled Abstract: No abstract text available Text: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	PDF	20N6903/S35A
Untitled Abstract: No abstract text available Text: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	PDF	20N6903/S35A
20N60 Abstract: 20N60 mosfet Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	PDF	20N60 20N60 QW-R502-587 20N60 mosfet
Untitled Abstract: No abstract text available Text: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	PDF	20N60 20N60B O-220
Untitled Abstract: No abstract text available Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	PDF	20N60C5M O-220

Untitled Abstract: No abstract text available Text: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	PDF	20N60C5M O-220
20n60c Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	PDF	ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c
Untitled Abstract: No abstract text available Text: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	PDF	20N60C5 O-247 O-220 20080523d
Untitled Abstract: No abstract text available Text: Ultrasonic sensors UNDK 20N6914/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo scanning range sd 10 . 200 mm scanning range far limit Sde 30 . 200 mm hysteresis typ. 4 % Sde	Original	PDF	20N6914/S35A
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	PDF	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1
20n60b Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	PDF	20N60B 20N60B O-268 O-247
20N60C Abstract: No abstract text available Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	PDF	20N60C ISOPLUS220TM E72873 20080523a 20N60C
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	PDF	20N60B
20n60 Abstract: No abstract text available Text: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	PDF	20N60 20N60B O-220 20N60B IXDP20N06B
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	PDF	20N60B O-220AB O-263

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onsemi FCP20N60

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20N6 Datasheets (9)

20N6 Datasheets Context Search

20N60B

20n60B

20N60 datasheet

mosfet 20n60

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20N60

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20n60c

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20N60 to220

20n60b

20N60C

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20n60

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