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    onsemi NGTB20N120IHSWG

    IGBT 1200V 20A TO247
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    20N120IHS

    Abstract: NGTB20N120IHSWG
    Text: 20N120IHSWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


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