20JUN2005 Search Results

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. RELEASED BY C O P Y R I G HT 20 TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R|3 H T $ LOC GP RESERVED. REV IS I O N S D I ST 00 LTR DE S C R PTION PROPOSED NOTE DWN DATE H O U S I N G C O L O R WAS B L A C K REVISED 20JUN2005

st 2904

Abstract: lm2904 2904Y diode k403 lm2904 so MARKING k403
Contextual Info: LM2904 Low power dual operational amplifier Features • Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth unity gain : 1.1MHz (temperature compensated) ■ Very low supply current/op (500µA) essentially independent of supply voltage

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■

JESD97

Abstract: L100NH3LL STL100NH3LL
Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

ST3485EBDR

Abstract: 75176 15KV IEC-1000-4-2 ST3485E ST3485EBN ST3485ECDR ST3485ECN
Contextual Info: ST3485E 3.3V Powered, 15KV ESD protected, Up to 12Mbps RS-485/RS-422 transceiver General features • ESD protection – ±15kV human body model – ±8kV IEC 1000-4-2 contact discharge ■ Operate from a single 3.3V supply - no charge pump required ■ Interoperable with 5V logic

2904Y

Abstract: k403 2904AY
Contextual Info: LM2904, LM2904A Low-power dual operational amplifier Datasheet - production data • Wide bandwidth unity gain : 1.1 MHz (temperature compensated)  Very low supply current/amplifier, essentially independent of supply voltage  Low input bias current: 20 nA (temperature

ADSL2 Modem circuit diagram

Abstract: MARKING TP27 SMP80MC SMP80MC-120 SMP80MC-140 SMP80MC-160 SMP80MC-200 SMP80MC-230 SMP80MC-270 TRISIL SMP
Contextual Info: SMP80MC TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES • Bidirectional crowbar protection ■ Voltage: range from 120V to 270V ■ Low VBO / VR ratio ■ Micro capacitance equal to 12pF @ 50V ■ Low leakage current : IR = 2µA max ■ Holding current: IH = 150 mA min

Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

Contextual Info: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

Contextual Info: SMP80MC TRISIL for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage: range from 120 V to 320 V ■ Low VBO / VR ratio ■ Micro capacitance equal to 12 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min

Contextual Info: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio

L80N4LL

Contextual Info: STL80N4LL N-CHANNEL 40V - 0.0046Ω - 80A PowerFLAT 6x5 STripFET™ MOSFET FOR DC-DC CONVERSION TARGET SPECIFICATION Table 1: General Features TYPE STL80N4LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 40 V < 0.005 Ω 20 A (2) TYPICAL RDS(on) = 0.0046 Ω @ 10V

Contextual Info: STL100NH3LL N-CHANNEL 30V - 0.0028Ω - 100A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (2) TYPICAL RDS(on) = 0.0028 Ω @ 10V

PowerFLAT

Contextual Info: STL100NH3LL N-CHANNEL 30V - 0.0032Ω - 25A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (1) TYPICAL RDS(on) = 0.0032Ω @ 10V

ma 7050

Abstract: GR-1089 SMP100LC SMP100LC-270 TRISIL SMP st L35
Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min

Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min.

N5PF02V

Abstract: JESD97 STN5PF02V
Contextual Info: STN5PF02V P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type VDSS RDS on ID STN5PF02V 20V <0.080Ω 4.2A • Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly

Contextual Info: SMP80MC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage: range from 120 V to 320 V ■ Low VBO / VR ratio ■ Micro capacitance equal to 12 pF @ 50 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min.

JESD97

Abstract: STL20NM20N
Contextual Info: STL20NM20N N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE STL20NM20N • ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 200 V < 0.105 Ω 20 A WORLDWIDE LOWEST GATE CHARGE

ST3485EBD

Abstract: 75176 ST3485ECDR 15KV ST3485E ST3485EBDR ST3485EBN ST3485ECD ST3485ECN
Contextual Info: ST3485E 3.3V POWERED, 15KV ESD PROTECTED, UP TO 12MBPS RS-485/RS-422 TRANSCEIVER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ESD PROTECTION: ±15KV HUMAN BODY MODEL ±8KV IEC 1000-4-2 CONTACT DISCHARGE OPERATE FROM A SINGLE 3.3V SUPPLY NO CHARGE PUMP REQUIRED

TRISIL SMP

Abstract: ML-14 SMP100MC VDE0433 VDE0878 SMP 1.25A smp marking stmicroelectronics ml32 ML-40 ML27
Contextual Info: SMP100MC TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES • Bidirectional crowbar protection ■ Voltage: range from 140V to 400V ■ Low VBO / VR ratio ■ Micro capacitance from 15pF to 30pF @ 50V ■ Low leakage current : IR = 2µA max ■ Holding current: IH = 150 mA min

Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •

STL80N4LLF3

Abstract: JESD97 L80N4LLF3 st MARKING E4
Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)