20DEC99 Search Results
20DEC99 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Si6968ADQContextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET |
Original |
Si6968ADQ 08-Apr-05 | |
Si6968ADQContextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET |
Original |
Si6968ADQ S-99586--Rev. 20-Dec-99 | |
642J
Abstract: 45204-1 008B A109 MIL-T-10727
|
OCR Scan |
H0-22 27JUN96 20-DEC-99 arnp36051 /home/amp36051 642J 45204-1 008B A109 MIL-T-10727 | |
A109
Abstract: HD-20
|
OCR Scan |
0G40-0267-99 16N0V99 NIL-C-50 NIL-G-45204; QQ-N-290. NIL-T-10727; MIL-C-14550. 27jjm HD-20 27JUN96 A109 | |
71107Contextual Info: Si4426DY New Product Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "8.5 0.035 @ VGS = 2.5 V "7.1 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
Original |
Si4426DY S-99545--Rev. 20-Dec-99 71107 | |
Contextual Info: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
Original |
Si4430DY S-99587--Rev. 20-Dec-99 | |
Contextual Info: 7 DRAWING THIS MADE IN DRAWING R THIRD IS ANGLE UNPUBLISHED. COPYRIGHT 19 6 5 7 3 4 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL LOC , 19 RIGHTS RESERVED. 516 REF 531 DI 5T 6 AJ REF REV I 5 I0N5 ZONE LTR A AP 1 8 8 h«- . 3 2 8 |
OCR Scan |
5UP5D-57 20DEC99 26FEB0 amp06572 /home/amp06572/edinmod 26-FEB-01 | |
Contextual Info: 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. RELEASED FOR P U B L I C A T IO N 19 BY AMP INCORPORATED. , 6 4 5 3 2 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS BD DE SC RI PT IO N v PDATED WITH „ 0 0 0 0 1 0 GOOD ON MATI NG END, „ 0 0 0 1 2 0 MI N T I N - D E A D |
OCR Scan |
BRA55 BRA55; GDA55 20-DEC-99 amp36051 /home/amp36051/edmmod | |
99548
Abstract: Si3454ADV
|
Original |
Si3454ADV S-99548--Rev. 20-Dec-99 99548 | |
Contextual Info: 6 7 T H IS DRAWING 15 UNPUBLISHED. JÊL RELEASED FOR PUBLICATION COPYRIGHT 19 , 4 5 2 3 19 LOC ALL RIGHTS RESERVED. BY AMP INCORPORATED. DI ST R EVISIO N S BD D ESCRIPTION G POSITION AMP, PART MARKED IN NO g AREA D A T E CODE IND ICATED 2 . 54 + 0 . 0 3 [ . 10 0 ± . 001 ] |
OCR Scan |
0G40-0267-99 QQ-N-290; HD-20 27JUN96 20-DEC-99 p36051 /home/amp36051/edmmod | |
Contextual Info: R0_EÀ5ffl PöR PUBUCAT1ÖW THIS DRAWING 15 UNPUBLISHED. COPYRIGHT LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS CE 16 LTR N DESCRIPTION DATE REV PER 0 A 4 0 -0 3 1 8 -0 2 APVD 24SEP02 JWD TD D 0.52 0.51 0.5 0.5 0.5 0.68 0.62 0.58 |
OCR Scan |
QRP0RAT10N. 0A40-0318-02 24SEP02 50/125um 1300nm 68i35 20DEC99 23APR96 | |
Si6968ADQContextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET |
Original |
Si6968ADQ 18-Jul-08 | |
SI4412ADYContextual Info: Si4412ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "8 0.035 @ VGS = 4.5 V "6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
Original |
Si4412ADY S-99547--Rev. 20-Dec-99 | |
Contextual Info: 7 T H IS DRAWING 15 UNPUBLISHED. JÊL COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. , 4 5 6 3 2 19 DI ST LOC ALL RIGHTS RESERVED. R EVISIO N S BD DESCRIPTION 5 RDVI5DD PDR DC 0G40-0267-99 DD 16 N0 V 99 KB NYLON OR POLYESTER, FLAME RETARDANT, UL 94V-0 RATED, GLASS |
OCR Scan |
0G40-0267-99 MIL-C-50 MIL-G-45204; QQ-N-290. MIL-T-10727; MIL-0-14550. HD-20 27JUN96 20-DEC-99 amp36051 | |
|
|||
99547Contextual Info: Si4412ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "8 0.035 @ VGS = 4.5 V "6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
Original |
Si4412ADY S-99547--Rev. 20-Dec-99 99547 | |
Contextual Info: Si4788CY New Product Vishay Siliconix 5-A Controlled Slew Rate Load Switch with Level Shift FEATURES D D D D D D 5-A Maximum Load Switches Voltages 1.8- to 5.5-V Ground Referenced Logic Inputs 1.8- to 5-V Logic Voltage Compatible 25-mW Maximum On-Resistance |
Original |
Si4788CY 25-mW S-56955--Rev. 20-Dec-99 | |
Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 8 D 7 S2 3 6 S2 4 5 G2 D 1 S1 2 S1 G1 D Si6968ADQ G1 G2 Top View S1 S2 N-Channel MOSFET |
Original |
Si6968ADQ S-99586--Rev. 20-Dec-99 | |
A109Contextual Info: r 7 T H I S DRAWING JÊL C OPYRIGHT 15 U N PU B L IS H E D . R E L E A S E D FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. , 4 5 6 3 2 19 D I ST LOC ALL R IG H T S R ES E R V E D . REVISIONS BD TIN PDATDD; B0ARDD0CK5: TIN-DDAD 100+.001 A MP , P A R T MARKED IN |
OCR Scan |
0G40-0267-99 0U1D-0113-00 6N0V99 31AUG01 M05SER A55EMBDY, 27JUN96 20-DEC-99 arnp36051 /home/amp36051 A109 | |
SUB75P03-07
Abstract: SUP75P03-07 99537
|
Original |
SUP/SUB75P03-07 O-220AB O-263 SUB75P03-07 SUP75P03-07 O-220AB O-263) O-263 S-99537--Rev. 20-Dec-99 SUB75P03-07 SUP75P03-07 99537 | |
00I-4Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. CE REVISIONS DIST 16 LTR DESCRIPTION DATE REVISE PER 0 A 0 0 - 0 1 5 8 - 0 0 02MAR00 OWN APVD CK KC D D 91.00±0.91 [3 5 8 2 .6 8 i3 5 .8 3 ] |
OCR Scan |
02MAR00 20DEC99 23APR96 23APR96 50/125jum 23FEB95 20DEC99 AMP32258 00I-4 | |
Contextual Info: Si3454ADV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.5 0.085 @ VGS = 4.5 V "3.8 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
Original |
Si3454ADV S-99548--Rev. 20-Dec-99 | |
Contextual Info: SUP/SUB85N06-05 New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 60 "85 a 0.0072 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N06-05 Top View |
Original |
SUP/SUB85N06-05 O-220AB O-263 SUP85N06-05 SUB85N06-05 O-220AB O-263) O-263 S-99560--Rev. 20-Dec-99 |