Untitled
Abstract: No abstract text available
Text: Bulletin 12031/B International I I]Rectifier 70/300U R .D SERIES STANDARD RECOVERY DIODES Stud Version Features D iffu sed d io d e W id e c u rre n t ra n g e High v o lta g e ra tin g s up to 1 6 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tu d c a th o d e and stud a n o d e ve rs io n
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12031/B
70/300U
5S452
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mlm196
Abstract: A T350V LM396 t350V
Text: MLM196/M LM 396 10A ADJUSTABLE THREE TERMINAL POSITIVE REGULATORS C om m ercial or Screened to various test methods o f MIL-STD-883 BASIC 1.25V to 15V REGULATOR FEATURES • • • • • • • Dir# 1OA Guaranteed output current 100% Burn-in in thermal limit
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MLM196/M
MIL-STD-883
mlm196
A T350V
LM396
t350V
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PDF
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Untitled
Abstract: No abstract text available
Text: ENG FILE COPY K<fcfc .1 /I* ¿.-72 À SF2950-6042 NOTES: 1. MATING: In te r fa c e D im ensions Per Mil-C-39012/SMA S e r ie s and Solitron/M icrow ave MD-107. 2. MATERIALS: Body : C ontact: In s u la to r : 3• FINISH: Body: C on tact: S ta in le s s S te l p er QQ-S-764, Type 303,
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SF2950-6042
Mil-C-39012/SMA
MD-107.
QQ-S-764,
QQ-C-530,
il-P-19468
L-P-403,
QQ-P-35A,
il-C-14550,
MIL-STD-202
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PDF
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z854
Abstract: CLT2030 CLT6053 CLT2020 CLT2035 T018
Text: CLAIREX ELECTRONICS »IV 21457TÏ 0000754 T ITE D T-Hhb CLT6053 Product Data CLT2020 CLT2030 CLT2035 Silicon NPN Planar Expitaxial Phototransistors GENERAL DESCRIPTION — The Clairex CLT6053, CLT2035, CLT2020 and CLT2030 are three terminal silicon NPN planar epitaxial phototransistors in a hermetic package.
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CLT6053
CLT2020
CLT2030
CLT2035
CLT6053,
CLT2035,
CLT2030
250mW
z854
T018
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PDF
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2n3055
Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A
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2N3055
MJ2955
MJ2955 2n3055 200 watts amplifier
MJ2955 300 watts amplifier
2N3055 curve
npn 2n3055
2n3055 collector characteristic curve
2N3055/MJ2955
MJ2955
MJ2955 TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: CO M PO NENTS _ ; Impervious lead free vitreous enamel coating High purity ceramic substrate Based on thirteen tube sizes Can be supplied with fixed, adjustable, tapped or low inductance winding. Seven termination styles with choice of mounting arrangments
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77777772Z
///77///7777X
BF1602
APIF1602.
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PDF
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Untitled
Abstract: No abstract text available
Text: K A E IO 7 1 9 9 ¿ > 7 2 ¿26 » < 2970-6002 NOTES: 1. MATING: Interface dimensions per Mil^C-39012/SMA Series and Sol itron/Microwave M D - 1 0 7 . 2. MATERIALS: Body, Hex Nut and Lockwasher: Contact : Insulator : Stainless Steel per Q Q ^S -7 64, Type 303, Cond. A.
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C-39012/SMA
Mil-P-19468
l-G-45204,
MIL-STD-202
20CPc)
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PDF
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Untitled
Abstract: No abstract text available
Text: K * K I« 7I K 2-72 2IM- 2720-600Í NOTES: 1. MATIN G : Interface dimensions per Solitron/Microwave MD-114. 2. Ì-IG». MATERIALS: Body:. Contact: Crimp Ring:. Insulator :_ Stainless Steel per QQ-S-764, Type 303, Cond.A. Beryllium Copper per QQ-C-530, C o n d . H,
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MD-114.
QQ-S-764,
QQ-C-530,
QQ-B-825A,
Mil-P-19468
L-P-403,
Mil-I-23053/4.
Mil-G-45204,
Mil-C-26074,
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PDF
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Untitled
Abstract: No abstract text available
Text: K & E IO 71 *5 2-72 22M> SF 29 55—6030 en g file copy NOTES: 1. r.O'ZS MATING: . 0 3 0 MlKA.-OlA- y . IZ " D E E P Interface Dimensions p e r Mil-C-39012/SMA Series and Solitron/Microwave M D - 1 0 7 . 2. MATERIALS: All Metal pa rt s except Contact and Lock Ring:
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Mil-C-39012/SMA
QQ-S-764,
QQ-P-35A,
MIL-STD-202
SF2955-6030
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PDF
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Untitled
Abstract: No abstract text available
Text: K M I« TIN 2.72 UM» 2950-6470 NOTES: 1. MATING: Interface dimensions per Mil-C-39012/SMA.Series and Solitron/Microwave MD-107. 2. MATERIALS: Body: Stainless Steel per QQ-S-764, Type 303, Cond. A. Contact: Beryllium Copper per QQ-C-530, Cond. H. Insulator : Teflon per M11-P-19468A.
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Mil-C-39012/SMA
MD-107.
QQ-S-764,
QQ-C-530,
M11-P-19468A.
Mil-G-45204,
Mil-C-26074,
Mil-C-14550,
MIL-STD-202
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PDF
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aplx
Abstract: No abstract text available
Text: PA51 • PA51A AP E X M I C R O TEC J H NQ L OG V C ORP OR ATION • APP LIC AT IO N S HÜfLINt: 800 546 APLX ¡HÜÜ- 6 2 7 39 FEATURES • • • • • WIDE SUPPLY RANGE — ±10 to ±40V HIGH OUTPUT CURRENT — ±10A Peak SECOND SOURCEABLE — OPA501, 8785
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PA51A
OPA501,
PA51A
500S2
500S2,
500i2.
aplx
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PDF
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2N3441
Abstract: No abstract text available
Text: ÆàMOSPEC NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Driver for High Power Outputs Series and Shunt Regulators
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2N3441
20CPC,
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PDF
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Untitled
Abstract: No abstract text available
Text: MLM196/MLM396 10A ADJUSTABLE THREE TERMINAL POSITIVE REGULATORS Commercial or Screened to various test methods of MIL-STD-883 BASIC 1.25V to 15V REGULATOR FEATURES • • • • • • • mn=^ 1OA Guaranteed output current 100% Burn-in in thermal limit
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MLM196/MLM396
MIL-STD-883
MLM196
bll2b40
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PDF
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Untitled
Abstract: No abstract text available
Text: Interconnection Systems Selection Guide 82750 Military Specified Circular Connectors Revised 7-95 MIL-C-38999 Series I , . , j . , , i f i l . j 1 This fam ily of c o n n e cto rs is o ffered in a variety of re ce p ta cle m ounting co n fig u ra tio n s. They in clude
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MIL-C-38999
MS27505
MB913
MS27468
MB914
MS27467
MB918
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Untitled
Abstract: No abstract text available
Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1N5629 + Series 1N5865A C 3 Y 3 0 M Control overpower ri k 1T 31.8 min. ¡1{5 .33 max. -» 7.5 9.0 25.4 min. l _I Smisibla PnxtèectSon MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): 1500 watts
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1N5629
1N5865A
10X1000
X10-1
1N56SEFJE5
500pcs)
1000pcs)
1N5629
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PDF
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TCSW-0201
Abstract: No abstract text available
Text: I nrts- 7 / C '- - ^TACHONI ' CORPORAT * .s t ^ s r • Preliminary Data Sheet -4- / ' i -, March, 1987 Features: • Broad Bandwidth DC-4 GHz • Low VSWR in all states • Low Insertion Loss 1.7 dB typ. • High Isolation 20 dB typ. • Fast Switching Speed 2nS
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TCSW-0201
779C-
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2N6338
Abstract: 2N6340 2N6436 2N6437 2N6438
Text: HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High d c current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage Vcbsat) = 1 ov (M ax ) @ lc = 10 A, lB = 1.OA
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20-80eic
2N6338
2N6340
2N6436
2N6437
2N6438
2N6340
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PDF
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Untitled
Abstract: No abstract text available
Text: K * E JO 71 SS 2 - 7 2 U N > SF1103-6001. NOTES: ± .0 2 5 1. M A TI N G : Interface dimensions per Mil-C-39012/SMA and TNC Series and Bolitron/Microwave MD-107 and MD-110. 2. MATERIALS: All metal parts except Contact and Lock Ring: Stainless Steel per QQ-S-764, Type 303, Cond. A.
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SF1103-6001.
Mil-C-39012/SMA
MD-107
MD-110.
QQ-S-764,
QQ-C-530,
QQ-S-750,
Mil-P-19468
L-P-403,
ZZ-R-765,
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PDF
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MIL-C-39012 SMA
Abstract: No abstract text available
Text: - -f.T: • M t^ F œ .W fW æ ~ P K M 10 7 1 H X-7X & '■ I» « Ir SF 2997-mm. NOTES: 1. MATING: Jack: Interface Dimensions per Mil-C-39012/SMA Series and Solitron/Microwave MD-107. Plug slidm-on i 39012. MATERIALS: 2. Mates with all SMA: Jack per Mil-C-
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2997-mm.
Mil-C-39012/SMA
MD-107.
QQ-S-764,
QQ-C-530,
MH-T-19468A.
QQ-P-35A,
Mil-G-45204,
Mil-C-14550,
MIL-C-39012 SMA
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PDF
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eurofarad CTS
Abstract: Eurofarad capacitor film EUROFARAD capacitor polycarbonat
Text: CONDENSATEURS A USAGE PROFESSIONNEL GENERALITES CAPACITORS FOR PROFESSIONAL APPLICATIONS GENERAL INFORMATION EUROFARAD bénéficie d'une expérience de plus de 30 ans dans le EUROFARAD has more than 30 years experience in developing anc développem ent et la fabrication d'une ga m m e étendue de con de nsa
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LD50 VOLTAGE REGULATOR
Abstract: transistor LD50 LD33 VOLTAGE REGULATOR ld33 c LD50 sot23-5 ld33 sot-23 Marking 40g LD33 SOT23-5 LD33 3 PIN REGULATOR Marking LD25
Text: G eneral Description Featu res The MIC5206 is an efficient linear voltage regulator with very low dropout voltage typically 17mV at light loads and 165m V at 150mA , and very low ground current (BOO^A at 100mA output), with better than 1% initial accuracy. It has a logic
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MIC5206
150mA)
100mA
MIC5206-x
450mW
MIC5206.
LD50 VOLTAGE REGULATOR
transistor LD50
LD33 VOLTAGE REGULATOR
ld33 c
LD50 sot23-5
ld33
sot-23 Marking 40g
LD33 SOT23-5
LD33 3 PIN REGULATOR
Marking LD25
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PDF
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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PDF
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2N3441
Abstract: No abstract text available
Text: NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Boca Semiconductor Corp. BSC http ://www.bocasemi.com Driver for High Power Outputs
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2N3441
20CPC,
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PDF
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2N6438
Abstract: 2N6338 2N6340 2N6436 2N6437
Text: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage
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2N6338
2N6340
2N6436
2N6437
2N6438
VCC-80V
2N6340
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PDF
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