2079M Search Results

SB2003

Abstract: SB20-03E EN3002 NO-3002
Contextual Info: Ordering number:EN3002 SB20-03E Schottky Barrier Diode 30V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1217 [SB20-03E] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=20ns).

2SC4390

Abstract: ITR06668 ITR06669 VEBO-15V
Contextual Info: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).

sdars radio tuner

Contextual Info: 19-3123; Rev 2; 6/05 KIT ATION EVALU E L B A AVAIL Complete SDARS Receiver The MAX2140 complete receiver is designed for satellite digital audio radio services SDARS . The device includes a fully monolithic VCO and only needs a SAW at the IF and a crystal to generate the reference frequency.

UAA2079

Abstract: PCD5040 SSOP16 SSOP20 UAA2078M power on circuit
Contextual Info: INTEGRATED CIRCUITS BUEET UAA2078M Zero IF front-end receiver for DECT applications 1995 Jul 07 Preliminary specification Supersedes data of November 1994 File under Integrated Circuits, IC03 Philips S em ico n d u cto rs • T llO flS b D OT Ob bS j PHILIPS |

2SC4390

Contextual Info: Ordering num ber:EN 2958 _ 2 S C 4 3 9 0 No.2958 NPN Epitaxial Planar Silicon Transistor H ig h - h p E , AF Amp Applications F e a tu re s . Adoption of MBIT process • H igh DC current gain hpE = 800 to 3200 • Large current capacity (Ic = 2A)

Contextual Info: Ordering number : EN3002 SB20-03E Schottky B arrier Diode 30V, 2A Rectifier A p p lic a tio n s • High frequency rectification switching regulators, converters, choppers F e a tu re s • Low forward voltage (Vp max = 0.55V) • F ast reverse recovery time (trr max = 20ns)

sdars radio tuner

Abstract: sdars sdars lna MAX2140 MAX2140ETH
Contextual Info: 19-3123; Rev 1a; 9/04 KIT ATION EVALU E L B A AVAIL Complete SDARS Receiver ♦ Differential I/Q Interface ♦ Complete Integrated Frequency Generation ♦ Bias Supply for External LNAs ♦ Overcurrent Protection ♦ Low-Power Standby Mode ♦ Very Small 44-Pin Thin QFN Package

SB10-09F

Contextual Info: Ordering number:EN2829B SB10-09F Schottky Barrier Diode 90V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1200A [SB10-09F] Features · Low forward voltage (VF max=0.7V).

B1340

Abstract: SSOP16 UAA2078M 8 channel RF Control Circuit UAA2079 2079M philips dect UAA2079M
Contextual Info: Objective specification Philips Semiconductors Zero IF front-end receiver for DECT applications_ UAA2078M FEATURES GENERAL DESCRIPTION • B alanced R F input T h e U A A 207 8M is a low -pow er front-end for use with the U A A 207 9M baseband part in a zero IF D E C T receiver. It

SB02-09NP

Abstract: 95V200 AN 1157A
Contextual Info: Ordering number :EN1924B SB02-09NP Shottky Barrier Diode 90V, 200mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1157A [SB02-09NP] Features · Low forward voltage (VF max=0.7V).

IC tl 494

Contextual Info: Ordering number : EN 2958 2SC4390 No.2958 SA \Y O NPN Epitaxial Planar Silicon Transistor High-hpE, AF Amp Applications F e a tu re s Adoption of MBIT process H igh DC current gain hpE = 800 to 3200 Large current capacity (Ic = 2A) Low collector to emitter saturation voltage (VcE(sat>= 0.3V)

2005A

Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Contextual Info: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features

sdars radio tuner

Abstract: MAX2140 MAX2140ETH lna vco mixer quadrature 2GHz
Contextual Info: 19-3123; Rev 3; 10/05 KIT ATION EVALU E L B A AVAIL Complete SDARS Receiver The MAX2140 complete receiver is designed for satellite digital audio radio services SDARS . The device includes a fully monolithic VCO and only needs a SAW at the IF and a crystal to generate the reference frequency.

Contextual Info: O rdering num ber: EN1924B SB02-09NP Schottky B arrier Diode 90V, 200mA Rectifier A p p lic a tio n s • H igh frequency rectification switching regulators, converters and choppers F e a tu r e s • Low forward voltage (Vp max = 0.7 V) • F ast reverse recovery time (trr max = 10ns)

1919a

Abstract: N0191
Contextual Info: Ordering number :EN1919A SB05-05NP N0.1919A Schottky Barrier Diode 50V, 500mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • Low forward voltage (Vp max = 0.55V) • Fast reverse recovery time (trr max = 10ns)

LD8164

Abstract: fip4a8s UPD848C IC-1139B NEC FIP4A8S FIP4A8 nec LD8 2SC1280A 2SC945 SS53
Contextual Info: , - :.«îfcflïÆ . N E C E L E C T R O N I C S I N C 75 ¿ a Æ Si-tti S Sâ ' rfe  è S^ V .x D e | b 427S 2S ODOTDCH h M V f :^ I5 rS r ^ “ “i ^ * ^ MOS DIGITAL INTEGRATED CIRCUIT M PD848C AUTOMOTIVE CLOCK CMOS LSI G E N E R A L D E S C R IP T IO N

sdars radio tuner

Abstract: 2076M MAX2140 MAX2140ETH RF432
Contextual Info: 19-3123; Rev 3; 10/05 KIT ATION EVALU E L B A AVAIL Complete SDARS Receiver The MAX2140 complete receiver is designed for satellite digital audio radio services SDARS . The device includes a fully monolithic VCO and only needs a SAW at the IF and a crystal to generate the reference frequency.

2SC4390

Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Contextual Info: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .

1148A

Abstract: SB02-09CP
Contextual Info: Ordering number :EN1922B SB02-09CP Shottky Barrier Diode 90V, 200mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SB02-09CP] Features · Low forward voltage (VF max=0.7V).

SB05-05NP

Abstract: 05-NP 05NP
Contextual Info: Ordering number :EN1919A SB05-05NP Shottky Barrier Diode 50V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1157 [SB05-05NP] Features · Low forward voltage (VF max=0.55V).

SB10-09F

Contextual Info: Ordering number:EN2829B SB10-09F Schottky Barrier Diode 90V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1200A [SB10-09F] Features · Low forward voltage (VF max=0.7V).

SB10-09F

Abstract: bdg rectifier
Contextual Info: Ordering number : EN2829A SB 1 0 - 0 9 F No.2829A Schottky Barrier Diode 90V , 1A R ectifier Applications »High frequency rectification switching regulators, converters, choppers Features •Low forward voltage (Vp max = 0.7V) • F ast reverse recovery time (trr max = 20ns)

Contextual Info: Ordering number : EN1922B SB02-09CP Schottky Barrier Diode SMÊYOi 90V, 200m A Rectifier A pplications •High frequency rectification switching regulators, converters and choppers F e a tu re s • Low forward voltage (Vp max = 0.7V) • Fast reverse recovery time (trr max = 10ns)

VEBO-15V

Abstract: 2SC4390 EN2958A 2038a
Contextual Info: Ordering number:EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 . · Large current capacity (IC=2A).