2060 TRANSISTOR Search Results

Apogee

Abstract: EB-2060X EB-2060 transistor subwoofer circuit diagram OMRON 1230 volume potentiometer 1k ohm subwoofer PREAMP circuit diagram C41 CENTRALAB CT622LY SMD electrolytic capacitor 100uF 63V
Contextual Info: EB-2060x DDX All-Digital, High Efficiency Evaluation Amplifier GENERAL DESCRIPTION FEATURES The EB-2060x is an evaluation amplifier that showcases Apogee’s all-digital, high efficiency Direct Digital Amplification DDX technology. The board features a DDX-2000 Controller and DDX-2060

Contextual Info: High Efficient Topologies for Next Generation Solar Inverter July 2008, Michael Frisch, Vincotech GmbH, Finsinger Feld 1, 82551 Ottobrunn Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications,

Ericsson PBC 6200

Abstract: ericsson PBC 6500 NTP 7513 pbc 05 ericsson 74LSO4 LM356 LM356 IC circuit diagram TE 555-1 ntp 3200 ic digital amplifier PEB 2050 N V2.2
Contextual Info: ICs for Communications Signal Processing Codec Filter SICOFI , SICOFI®-2 User’s Manual 03.92 PEB 2060; PEB 2260 Revision History: Original Version 03.92 Previous Releases: Page Subjects changes since last revision Edition 03.92 This edition was realized using the software system FrameMaker.

Contextual Info: Advantages of NPC Inverter Topologies with Power Modules Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. Many applications are driven by the

Contextual Info: Power Module with Additional Low Inductive Current Path Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) 1 Abstract Parasitic inductances are a major problem with power modules, in particular in fast switching

Contextual Info: Advantages of NPC Inverter Topologies with Power Modules July 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications are running

2SC2060

Abstract: E8 55A TO-92MOD
Contextual Info: TO-92MOD Plastic-Encapsulate Transistors 2S C 2060 TRANSISTO R NPN F E AT U RES Power dissipation TO-92MOD P cm : C ollector current 1 .EMITTER Icm: 2 .COLLECTOR I 1A C ollector-base voltage 3 .BASE I 0.75W (Tamb=25°C) V ( br )c b o : 40 V O perating and storage jun ction tem perature range

Apogee

Abstract: 2060 DDX-2060 DDX2060 DDX-2000 24v Audio amplifier class d 24v Audio amplifier class d single supply 24v up Audio amplifier 2x35W diode e 2060
Contextual Info: DDX-2000/2060 All-Digital High Efficiency Power Amplifier GENERAL DESCRIPTION FEATURES • HIGH OUTPUT CAPABILITY 2x35W into 8 Ω @ <1% THD+N 1x70W into 4 Ω @ <1% THD+N • SINGLE SUPPLY +9V to +30V • HIGH EFFICIENCY, >88% • DIGITAL VOLUME CONTROL, ANTICLIPPING AND AUTOMATIC MUTE

Contextual Info: Design Concept for a Transformerless Solar Inverter Dec. 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Vincotech is able to offer a wide spectrum of power modules for solar applications. In the following we

DDX-2060

Abstract: DDX2060 car class d audio 50W DDX-8000 ddx-4100a DDX-4100 100w Mono CLASS D amplifier diagram 2060 data sheet DDX-2000 100 100w stereo amplifier
Contextual Info: DDX-2060 All-Digital High Efficiency Power Amplifier FEATURES • HIGH OUTPUT CAPABILITY • 2 x 35W into 8Ω or 1 x 70W into 4Ω @ <1% THD • 2 x 50W into 8Ω or 1 x 100W into 4Ω @ 10% THD • SINGLE SUPPLY +9V to +30V • COMPACT SURFACE MOUNT PACKAGE

HA911

Abstract: lh002 HA-911 MA702 CD4046 MC1554 HA-2500 HA-2510 HA-2512 HA-2522
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, HA-2620, HA-2622, HA-2050, HA-2050A, HA-2060, HA-2060A H <a "1 TO-99 3 j— N OTES: T a = +125°C R- = 1 M e g o h m C-] = 0.01 jUF, 1 0 0 V HA-2000 NOTES:

Contextual Info: APTEK T E C H / A P T E K MICROSYS 5SE D • //eicapteKop^ ¿ a p te k aptey^ ÜÔ'ÎSITb 0 0 0 0 M Ô 3 f laptekaptek api* a p t e k t e c h n o l o g i e s , i n c . aptek <*jr V fi ■ A M S 2060 Active Termination Interface Circuit 1 J PRELIMINARY DESCRIPTION

AT 2005A

Abstract: HA-2000A fet preamp HA-2500 HA-2502 HA-2510 HA-2512 HA-2520 HA-2522 HA-200-5
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, H A-2500, HA-2502, HA-2510, HA-2512, H A-2520, HA-2522, HA-2600, HA-2602, HA-2620, H A-2622, HA -2050, HA-2050A , HA-2060, HA-2060A H <a "1 TO-99 3 j— NOTES: T a = + 1 2 5 °C R- = 1 M e g o h m C-] = 0 .0 1 jU F , 1 0 0 V

AT 2005A

Abstract: 106 25K 011 HA-2000 HA-2000A HA-2050A HA-2060 HA-2060A HA-2500 HA-2502 HA-2510
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for M ilita ry Applications -55°C to +125°C PARAM ETER* F.E.T. PR EA M P HA-2000 HA-2000A HA-205O HA-909 ?r a m HA-2060A HA-2400 HA-2050A HA-2060 S/H HA-2420 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C T E R IST IC S

2n555

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3

LS 74151

Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363

2N3214

Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Contextual Info: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883

2n3215

Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581

2N3215

Abstract: MT28 TO13 2n3214 Germanium power
Contextual Info: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r

germanium transistors NPN

Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Contextual Info: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A

2N2067

Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581

2N158A

Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)

2N3440A

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5