Untitled
Abstract: No abstract text available
Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
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IBM0164405B16M
Abstract: IBM0164405BJ5B-50 IBM0164405BJ5B-60 IBM0164405P16M
Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
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IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
128ms
104ns
IBM0164405BJ5B-50
IBM0164405BJ5B-60
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM64V4002B/BL, KM64V4002BI/BLI Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark
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KM64V4002B/BL,
KM64V4002BI/BLI
32-TSOP2-400F
047MAX
002MIN
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MAS 10 RCD
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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PDF
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
MAS 10 RCD
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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PDF
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
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17405CJ
Abstract: No abstract text available
Text: VG26 V (S)17405C 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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17405C
26/24-pin
50/60ns
127mm)
025mm)
1G5-0088
17405CJ
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27s185
Abstract: No abstract text available
Text: A m 2 7 S 1 8 5 /2 7 S 1 8 5 A Advanced Micro Devices 8,192-Bit 2048x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS Ultra-fast access time " A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow tremendous system speed improvements
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192-Bit
2048x4)
Am27S
185/27S
KS000010
Am27S185/27S185A
27s185
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S485A
Abstract: 2048X4 53S841 tS1820 53S841A 63S841 63S841A A933 63S485
Text: 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A High Performance 2 0 4 8 x 4 PROM TiW PROM Family Features/ Benefits Description • 35-ns maximum access time T h e 53/63S841 a n d 5 3/6 3S 8 4 1 A a re 2048x4 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t P N P in p u ts , fu ll S c h o ttk y cla m p in g ,
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2048x4
53/63S841
53/63S841A
35-ns
53/63S841A
S485A
53S841
tS1820
53S841A
63S841
63S841A
A933
63S485
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6331-1 prom
Abstract: No abstract text available
Text: Generic NiCR PROM Fam ily 53/63XXX-1 53/63XXX-2 F eatures/ Benefit Description • From 256 Bit to 8192 Bit memory The 53/63XX series generic PROM fam ily offers a w ide selection of size and organizations. The 4-bit w ide PROMs range from 256x4 to 2048x4 and feature up w ard/dow nw ard pin out com
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53/63XXX-1
53/63XXX-2
53/63XX
256x4
2048x4
1024x8
24-pin
6331-1 prom
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82HS185
Abstract: N82HS185 N82HS185A S82HS185
Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 2048x4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ly available by fo llo w in g th e fu sin g p roce
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8192-BIT
2048x4)
82HS185/82HS185A
82HS185
N82HS185
N82HS18SA
S82HS185
N82HS185
N82HS185A
S82HS185
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Untitled
Abstract: No abstract text available
Text: 2048x4 Diagnostic Registered PROM 53DA841 63DA841 w ith Asynchronous Enable and Output Initialization Features/Benefits Description • Asynchronous output enable • Programmable asynchronous output Initialization • Provides system diagnostic testing with system
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2048x4
24-pin
24-mA
53DA841
63DA841
53/63DA841
53/63DA841
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5t83
Abstract: KS000010
Text: a Am 27 S 185/27 S 185 A 8,192-Bit 2048x4 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time "A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow tremendous system speed improvements Platinum-Silicide fuses guarantee high reliability, fast
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192-Bit
2048x4)
Am27S185
27S185/27S185A
KS000010
Am27S185/27S185A
5t83
KS000010
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6331-1
Abstract: 6301-1 prom 6349-1 Monolithic Memories 6301 PROM programming 6309-1 6341 prom 6301-1 monolithic memories prom 5349 6306-1 prom 6309
Text: Generic NiCR PROM Family 53/63X X -1 Description Features/ Benefits The 53/63XX-1-series generic PROM fam ily offers the widest selection of sizes and organizations available in the industry. The 4-bit wide PROMs range from 256x4 to 2048x4 and feature upward/downward pin out com patibility in the space saving 16
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53/63XX-1
MIL-M-38510)
53/63XX-1-series
256x4
2048x4
6331-1
6301-1 prom
6349-1
Monolithic Memories 6301 PROM programming
6309-1
6341 prom
6301-1
monolithic memories prom 5349
6306-1 prom
6309
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2580N
Abstract: No abstract text available
Text: s i g r i Q 8 1 9 2 - B IT t i c s S T A T IC O K Q f l READ O NLY M EM O RY * u o u SILICON GATE MOS 2500 SERIES DESCRIPTION PIN CONFIGURATION Top View- The 2680 it an 8,192-Bit Read-Only Memory available in a 2048x4 organization. This device has TTL compatible inputs
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192-Bit
2048x4
625ns
VGG--12V
33I333133
S555S5
5SSSSSSSS55S5S5SS5S5555SS55SS5SSSS
5S55555SD5I55S
991919l9
2580N
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Untitled
Abstract: No abstract text available
Text: High Performance 2 0 4 8 x 4 PROM TiW PROM Family 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A ¿3 s ^ Features/Benefits Description • 35-ns maximum access time The 53/63S841 and 53/63S841A are 2048x4 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping,
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35-ns
53/63S841
53/63S841A
2048x4
63S841A
63S841
53S841A
53S841
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63ls1640
Abstract: No abstract text available
Text: High Performance Low Power Schottky Generic PROM Family s3/ 63ls x x x Features/ Benefits Description • Largest generic low power Schottky PROM family available The 53/63LSXXX series generic PROM fam ily offers the lowest power and fastest speeds available in the industry. The 4-bitwide PROMs range from 256x4 to 2048x4 and feature upward/
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53/63LSXXX
256x4
2048x4
2048x8.
256X8
63RA283
53RA283
53RA483
512x8
63RA483
63ls1640
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63S841
Abstract: No abstract text available
Text: High Performance 2 0 4 8 x 4 PROM TiW PROM Family 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A Featu res/ Benefits Description • 35-ns maximum access time The S3/63S841 and 53/63S841A are 2048x4 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping,
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35-ns
S3/63S841
53/63S841A
2048x4
63S841
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53DA841
Abstract: 63DA841
Text: 2 0 4 8 x 4 Diagnostic Registered PROM 53D A 841 63D A 841 w ith Asynchronous Enable and Output Initialization Features/Benefits Description • Asynchronous output enable • Programmable asynchronous output Initialization • Provides system diagnostic testing with system
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2048x4
53DA841
63DA841
24-pin
24-mA
diagnosti25
53/63DA841
53DA841
63DA841
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mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories
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MS800MM0S
MC3870
MC14S00B,
MC141000/1206
M2900
M10800
M6800
MC14500B,
MC141000/1200
mcm6830
EXORCISER motorola M68MM01A
7642T
MC68B54
transistor bf 175
motorola application note 6809 6844
MMS1117
EXORCISER motorola M68MM01A2
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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27S43
Abstract: No abstract text available
Text: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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7611 prom
Abstract: mi 7641 7641 prom 1024X4 7621 prom 4096X4 lansdale PROM 32x8
Text: Bipolar PROM 7 MAXIMUM RATINGS Rating HARRIS INTEGRATED CIRCUITS BIPOLAR PROM 7600 Series Value Unit Output or Supply Voltage - Vcc -.3 to 7 V Address/Enable Input Voltage 5.5 V Address/Enable Input Current -20 mA -65 to +175 °C Storage Temperature - Tstg
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
7611 prom
mi 7641
7641 prom
1024X4
7621 prom
4096X4
lansdale PROM 32x8
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EMA18
Abstract: No abstract text available
Text: % P ro tfn ? V rr-T y KM644002B, KM644002BI C M O SSR A M 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40« • (Max.) The KM644002B is a 4,194,304-bit high-speed Static Random
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KM644002B,
KM644002BI
KM644002B
KM644002B-
KM6440028-
KM644002BJ
32-SOJ-400
KM644002BT
32-TSOP2-4QOF
EMA18
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