2048B Search Results

2048B Result Highlights (5)

Part	Manufacturer	Description
82V2048BBG	Renesas Electronics Corporation	8 Channel T1/E1 Short Haul LIU
MSP430F2370TRHAT	Texas Instruments	16-bit Ultra-Low-Power Microcontroller, 32KB Flash, 2048B RAM, Comparator 40-VQFN -40 to 105
MSP430F2370IRHAR	Texas Instruments	16-bit Ultra-Low-Power Microcontroller, 32KB Flash, 2048B RAM, Comparator 40-VQFN -40 to 85
MSP430F2370IRHAT	Texas Instruments	16-bit Ultra-Low-Power Microcontroller, 32KB Flash, 2048B RAM, Comparator 40-VQFN -40 to 85
MSP430F2370TRHAR	Texas Instruments	16-bit Ultra-Low-Power Microcontroller, 32KB Flash, 2048B RAM, Comparator 40-VQFN -40 to 105

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Shenzhen Sctf Electronics Co Ltd SX5M2.048B20F30TNN XTAL OSC XO 2.0480MHz CMOS SMD
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DigiKey	SX5M2.048B20F30TNN	Reel	120,000		10	1 - 10 $3.39 100 $0.65 1000 $0.34 10000 $0.3	Buy Now
Shenzhen Sctf Electronics Co Ltd SX7M2.048B20F30TNN XTAL OSC XO 2.0480MHz CMOS SMD
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DigiKey	SX7M2.048B20F30TNN	Reel	120,000		10	1 - 10 $3.4 100 $0.67 1000 $0.36 10000 $0.32	Buy Now
Essentra Components SR-2048B RIVET SNAP 0.189" NYLON BLACK
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DigiKey	SR-2048B	Bulk	22,248		1	1 $0.41 10 $0.41 100 $0.2499 1000 $0.20559 10000 $0.20559	Buy Now
Mouser Electronics	SR-2048B		1,115			1 $0.34 10 $0.263 100 $0.228 1000 $0.205 10000 $0.205	Buy Now
Onlinecomponents.com	SR-2048B					1 - 10 - 100 - 1000 $0.2046 10000 $0.1926	Buy Now
DB Roberts	SR-2048B		32,422			1 $0.4358 10 $0.4358 100 $0.3062 1000 $0.1988 10000 $0.1888	Buy Now
ECS International Inc ECS-2520MVLC-020.48-BN-TR XTAL OSC XO 2.048MHZ CMOS SMD
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DigiKey	ECS-2520MVLC-020.48-BN-TR	Cut Tape	2,449		1	1 $1.35 10 $1.173 100 $1.0197 1000 $0.92448 10000 $0.92448	Buy Now
	ECS-2520MVLC-020.48-BN-TR	Digi-Reel	2,449		1	1 $1.35 10 $1.173 100 $1.0197 1000 $0.92448 10000 $0.92448	Buy Now
	ECS-2520MVLC-020.48-BN-TR	Reel	2,000		1,000	1 - 10 - 100 - 1000 $0.87519 10000 $0.75757	Buy Now
Avnet Americas	ECS-2520MVLC-020.48-BN-TR	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	ECS-2520MVLC-020.48-BN-TR		1,437			1 $1.41 10 $1.22 100 $1.05 1000 $0.912 10000 $0.789	Buy Now
Avnet Abacus	ECS-2520MVLC-020.48-BN-TR	Reel		14 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	ECS-2520MVLC-020.48-BN-TR					1 - 10 - 100 - 1000 $0.8 10000 $0.671	Buy Now
Essentra Components SRVO-2048B RIVET SNAP 0.190" NYLON BLACK
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DigiKey	SRVO-2048B	Bulk	1,837		1	1 $0.47 10 $0.47 100 $0.2843 1000 $0.23442 10000 $0.23442	Buy Now
Mouser Electronics	SRVO-2048B					1 $0.38 10 $0.288 100 $0.248 1000 $0.234 10000 $0.234	Get Quote
RS	SRVO-2048B	Bulk		13 Weeks	1,000	1 - 10 - 100 - 1000 $0.427 10000 $0.363	Get Quote
Onlinecomponents.com	SRVO-2048B					1 - 10 - 100 - 1000 $0.2077 10000 $0.185	Buy Now
DB Roberts	SRVO-2048B					1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2048B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TC58NVG1S3ETA00 Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111 Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Untitled Abstract: No abstract text available Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.	Original	PDF	TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C
Untitled Abstract: No abstract text available Text: TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG2S0FTAI0 TC58NVG2S0F 2048blocks. 4320-byte
TC58NYG1S3EBAI4 Abstract: P-TFBGA63-0911-0 Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0
Untitled Abstract: No abstract text available Text: TC58NVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HBAI4 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.	Original	PDF	TC58NVG1S3HBAI4 TC58NVG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C
Untitled Abstract: No abstract text available Text: TC58NVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HTA00 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.	Original	PDF	TC58NVG1S3HTA00 TC58NVG1S3HTA00 2048blocks. 2176-byte 2013-01-18C
Untitled Abstract: No abstract text available Text: TC58NVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.	Original	PDF	TC58NVG1S3HBAI6 TC58NVG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C
Untitled Abstract: No abstract text available Text: TC58BVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HBAI4 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58BVG1S3HBAI4 TC58BVG1S3HBAI4 2048blocks. 2112-byte 2112-bytes 2013-01-31C
Untitled Abstract: No abstract text available Text: TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.	Original	PDF	TC58BYG2S0HBAI6 TC58BYG2S0HBAI6 2048blocks. 4224-byte 4224-bytes 2013-07-05C
Untitled Abstract: No abstract text available Text: Ordering number: ENA1841A LC87F7932B CMOS IC 32K-byte FROM and 2048-byte RAM integrated 8-bit 1-chip Microcontroller Overview The LC87F7932B is an 8-bit microcontroller that, centered around a CPU running at a minimum bus cycle time of 250ns, integrates on a single chip a number of hardware features such as 32K-byte flash ROM onboard programmable , 2048byte RAM, an on-chip debugger, an LCD controller/driver, two sophisticated 16-bit timers/counters (may be divided into	Original	PDF	ENA1841A LC87F7932B 32K-byte 2048-byte LC87F7932B 250ns, 2048byte 16-bit
Untitled Abstract: No abstract text available Text: TC58BVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HTA00 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58BVG1S3HTA00 TC58BVG1S3HTA00 2048blocks. 2112-byte 2112-bytes 2013-01-31C
tc58nyg1s3ebai5 Abstract: TC58NYG1 Text: TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NYG1S3EBAI5 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C tc58nyg1s3ebai5 TC58NYG1
TC58NVG1S3ETAI0 Abstract: TC58NVG1S3 TC58NVG1S3ET TC58NVG1S3ETA Text: TC58NVG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG1S3ETAI0 TC58NVG1S3E 2048blocks. 2112-byte TC58NVG1S3ETAI0 TC58NVG1S3 TC58NVG1S3ET TC58NVG1S3ETA
TC58NVG1S3ETA00 Abstract: No abstract text available Text: TC58NVG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NVG1S3ETA00

Untitled Abstract: No abstract text available Text: TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.	Original	PDF	TC58NVG2S0FBAI4 TC58NVG2S0F 2048blocks. 4320-byte
TC58NVG1S3EBAI4 Abstract: 05h-E0h Text: TC58NVG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG1S3EBAI4 TC58NVG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NVG1S3EBAI4 05h-E0h
toshiba nand plane size Abstract: No abstract text available Text: TC58NVG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2012-09-01C toshiba nand plane size
Untitled Abstract: No abstract text available Text: TC58BVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HBAI6 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58BVG1S3HBAI6 TC58BVG1S3HBAI6 2048blocks. 2112-byte 2112-bytes 2013-01-31C
Untitled Abstract: No abstract text available Text: TC58NVG2S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0HTAI0 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG2S0HTAI0 TC58NVG2S0HTAI0 2048blocks. 4352-byte 2013-07-05C
Untitled Abstract: No abstract text available Text: TC58NVG1S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HTAI0 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.	Original	PDF	TC58NVG1S3HTAI0 TC58NVG1S3HTAI0 2048blocks. 2176-byte 2013-01-18C
Untitled Abstract: No abstract text available Text: ASAHI KASEI [AK6420H] A K 6 4 2 OH AKM Wide Vcc 2.5V ~ 5.5V 2048bit Serial Electrically Erasable PROM ^ Features □ ADVANCED CMOS E2PROM TECHNOLOGY	OCR Scan	PDF	AK6420H] 2048bit E2TD00 AK6420H 0003-E-00
LTRG Abstract: No abstract text available Text: “H Y U N D A I HYM5V64224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of four HY5V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 1mF and	OCR Scan	PDF	HYM5V64224A 64-bit HY5V18164B 2048bit HYM5V64224ARG/LRG/TRG/LTRG Single24A 1EC07-10-JUN96 LTRG
HY5118164 Abstract: F1024 Text: • H Y UN DA I HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin	OCR Scan	PDF	HYM572A224A 72-bit HY514404B HY5118164B 2048bit HYM572A224ARG/ASLRG/ATRG/ASLTRG DQ0-DQ71) 1EC06-10-APR95 HY5118164 F1024
Untitled Abstract: No abstract text available Text: »HYUNDAI HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048bit EEPROM on a 168 pin	OCR Scan	PDF	HYM572A224A 72-bit HY514404B HY5118164B 2048bit HYM572A224ARG/ASLRG/ATRG/ASLTRG 01CKQ2SXMX. 012SQ18)

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2048B Search Results

2048B Result Highlights (5)

2048B Price and Stock

Shenzhen Sctf Electronics Co Ltd SX5M2.048B20F30TNN

Shenzhen Sctf Electronics Co Ltd SX7M2.048B20F30TNN

Essentra Components SR-2048B

ECS International Inc ECS-2520MVLC-020.48-BN-TR

Essentra Components SRVO-2048B

2048B Datasheets Context Search

TC58NVG1S3ETA00

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TC58NYG1S3EBAI4

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tc58nyg1s3ebai5

TC58NVG1S3ETAI0

TC58NVG1S3ETA00

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TC58NVG1S3EBAI4

toshiba nand plane size

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LTRG

HY5118164

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