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    Lockheed Martin 203A665-137

    STANDARD SRAM, 128KX8, 30NS, CMOS, CDFP40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 203A665-137 7
    • 1 $750
    • 10 $600
    • 100 $600
    • 1000 $600
    • 10000 $600
    		Buy Now

    BAE Systems 203A665-137

    STANDARD SRAM, 128KX8, 30NS, CMOS, CDFP40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 203A665-137 1
    • 1 $750
    • 10 $700
    • 100 $700
    • 1000 $700
    • 10000 $700
    		Buy Now

    203A665 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    203A665 BAE Systems 128K x 8 Radiation Hardened Static RAM - 3.3 V Original PDF
    203A665-131 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 30NS 40FP Original PDF
    203A665-133 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 30NS 40FP Original PDF
    203A665-134 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 30NS 40FP Original PDF
    203A665-135 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 30NS 40FP Original PDF
    203A665-137 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 30NS 40FP Original PDF
    203A665-141 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 35NS 40FP Original PDF
    203A665-143 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 35NS 40FP Original PDF
    203A665-144 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 35NS 40FP Original PDF
    203A665-145 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 35NS 40FP Original PDF
    203A665-147 BAE Systems IC SRAM CHIP ASYNC SINGLE 1MBIT 128K x 8 35NS 40FP Original PDF

    203A665 Datasheets Context Search

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    203A665

    Abstract: J122 SMD TRANSISTOR 314 j122
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 1x106 1x1014 1x109 1x10-11 1x1012 5962H98615 40-Lead AS9000, 203A665 J122 SMD TRANSISTOR 314 j122

    Untitled

    Abstract: No abstract text available
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 5962H98615 40-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, x5040)