201N25A Search Results
201N25A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DE275-201N25AContextual Info: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 |
Original |
DE275-201N25A 201N25A 1100P DE275-201N25A | |
DE275-201N25AContextual Info: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient |
Original |
DE275-201N25A 201N25A 1100P DE275-201N25A |