200VOLT Search Results

IRHM7230

Abstract: IRHM8230
Contextual Info: PD - 90713C IRHM7230 IRHM8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

IRFE210

Abstract: JANTX2N6784U JANTXV2N6784U
Contextual Info: Provisional Data Sheet No. PD - 9.1722 IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 200Volt, 1.5Ω Product Summary The leadless chip carrier LCC package represents

SB10200C

Contextual Info: E L E C T R O N I C SB10200C Power Schottky Rectifier - 10Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

MBR20H200CT

Abstract: MBR20H200FCT
Contextual Info: E L E C T R O N I C MBR20H200CT/FCT Power Schottky Rectifier - 20Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

sb3200

Abstract: SB3150 diode sb340 SB340 SB34 schottky sb3200 sb340 diode Sirectifier Semiconductors SB31 SB3100
Contextual Info: E L E C T R O N I C SB340 ~ SB3200 Power Schottky Rectifier - 3Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic

Contextual Info: E L E C T R O N I C MBR20200CG Power Schottky Rectifier - 20Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

SB315

Abstract: schottky rectifier 3amp sb3200
Contextual Info: E L E C T R O N I C SB3150FC~SB3200FC Power Schottky Rectifier - 3Amp 150~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic

SB140

Abstract: SB1200 SB1100 SB14 SB16 SB160
Contextual Info: E L E C T R O N I C SB140 ~ SB1200 Power Schottky Rectifier - 1Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic

MBR20H200FCT

Contextual Info: E L E C T R O N I C MBR20H200FCT Power Schottky Rectifier - 20Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

SB315

Abstract: sb3200 sb3200c
Contextual Info: E L E C T R O N I C SB3150C~SB3200C Power Schottky Rectifier - 3Amp 150~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic

SB5150

Abstract: SB5200
Contextual Info: E L E C T R O N I C SB5150~SB5200 Power Schottky Rectifier - 5Amp 150~200Volt DO-27 / DO-201AD □ Features .375 9.5 .285(7.2) 1.0(25.4) -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction

MBR30200PT

Contextual Info: E L E C T R O N I C MBR30200PT Power Schottky Rectifier - 30Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

Contextual Info: E L E C T R O N I C MBR10L200CT Power Schottky Rectifier - 10Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

SBR56

Abstract: SBR520
Contextual Info: E L E C T R O N I C SBR54 ~ SBR520 Power Schottky Rectifier - 5Amp 40~200Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency

Contextual Info: Provisional Data Sheet No. PD-9.1614 International I R Rectifier IRLF230 HEXFET TRANSISTOR N -C H A N N E L Product Summary 200Volt, 0.40 Q, HEXFET T h e L o g ic L e ve l ‘L’ s e rie s o f p o w e r M O S F E T s are d e s ig n e d to be o p e ra te d w ith le ve l lo g ic g a te -to s o u rc e v o lta g e o f 5V. In a d d itio n to th e w e ll e s ­

Contextual Info: Provisional Data Sheet No. PD-9.1332B International TOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 200Volt, 0.070Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r ’ s R A D H A R D te c h n o lo g y

KSF30A40B

Contextual Info: FRD T y p e : KSF30A F30A40B OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings

International Rectifier 9240

Contextual Info: Provisional Data Sheet No. PD-9.1554A International IQR Rectifier HEXFET POWER MOSFET IRFN9240 P-CHANNEL -200Volt, 0.51 a HEXFET Product Summary H E X F E T technology is the key to International Rectifier’s advanced line of power M OSFET transis­ tors. The efficient geometry achieves very low on-state

Contextual Info: P D - 9.1717 International Rectifier I R IRFE9230 JANTX2N6851 U R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D JANTXV2N6851 U HEXFET TRANSISTOR JANS2N6851 U [REF:MIL-PRF-19500/564] P -C H A N N E L Product Summary B V dss Part Number -200Volt, 0.80ft, HEXFET

Contextual Info: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology

88W51

Abstract: ET630
Contextual Info: ET630 9 Amps， 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

ksf30a60b

Contextual Info: FRD T y p e : KSF30A F30A60B OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings

Contextual Info: FRD T y p e : KSF30A F30A40B OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings

Contextual Info: FRD T y p e : KSF30A F30A40E OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings