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Micro Commercial Components MCP200N06Y-BP N-CHANNEL MOSFET,TO-220AB(H)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCP200N06Y-BP	Tube	2,563		1	1 $2.75 10 $1.79 100 $2.75 1000 $1.1 10000 $1.1	Buy Now
Mouser Electronics	MCP200N06Y-BP					1 - 10 - 100 - 1000 - 10000 $1.08	Get Quote
Cornell Dubilier Electronics Inc 382LX332M200N062 CAP ALUM 3300UF 20% 200V SNAP TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	382LX332M200N062	Bulk	758		1	1 $13.2 10 $9.415 100 $7.3996 1000 $6.32248 10000 $6.32248	Buy Now
TTI	382LX332M200N062	Bulk	144		48	1 - 10 - 100 $7.88 1000 $6.32 10000 $6.32	Buy Now
Micro Commercial Components MCB200N06Y-TP N-CHANNEL MOSFET, D2-PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCB200N06Y-TP	Digi-Reel	675		1	1 $2.76 10 $1.785 100 $2.76 1000 $2.76 10000 $2.76	Buy Now
	MCB200N06Y-TP	Cut Tape	675		1	1 $2.76 10 $1.785 100 $2.76 1000 $2.76 10000 $2.76	Buy Now
	MCB200N06Y-TP	Reel			800	1 - 10 - 100 - 1000 $0.93574 10000 $0.818	Buy Now
Mouser Electronics	MCB200N06Y-TP					1 $2.31 10 $1.7 100 $1.23 1000 $0.867 10000 $0.817	Get Quote
Cornell Dubilier Electronics Inc 383LX332M200N062 CAP ALUM 3300UF 20% 200V SNAP TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	383LX332M200N062	Bulk	582		1	1 $22.66 10 $16.68 100 $13.4927 1000 $12.19412 10000 $12.19412	Buy Now
TTI	383LX332M200N062	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components MCB200N06YA-TP N-CHANNEL MOSFET, D2-PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCB200N06YA-TP	Cut Tape	350		1	1 $2.75 10 $1.778 100 $2.75 1000 $2.75 10000 $2.75	Buy Now
	MCB200N06YA-TP	Digi-Reel	350		1	1 $2.75 10 $1.778 100 $2.75 1000 $2.75 10000 $2.75	Buy Now
	MCB200N06YA-TP	Reel			800	1 - 10 - 100 - 1000 $0.93199 10000 $0.81413	Buy Now
Mouser Electronics	MCB200N06YA-TP					1 - 10 - 100 - 1000 $0.864 10000 $0.812	Get Quote

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200N06 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
200N06P Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 200N06P RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Transient Continuous ±30 ±20 V V ID25 TC = 25° C	Original	PDF	200N06P 200N06P
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 200N06P = 60 V = 200 A ≤ 6.0 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Transient Continuous	Original	PDF	200N06P
200N06 Abstract: SOT-227 Package Text: HiPerFETTM Power MOSFETs IXFN 200 N06 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IL RMS TC= 25°C; Chip capability	Original	PDF	728B1 200N06 SOT-227 Package
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability	Original	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
IXFN180 Abstract: 200N06 Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability	Original	PDF	200N06/200N07 180N07 IXFN180 150OC 100OC IXFN180 200N06
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
200N07 Abstract: 180N07 200N06 BT 1496 Text: HiPerFETTM Power MOSFETs VDSS Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient N07 N06 N07 N06 ID25 A TC= 25°C ID130 IDM IAR TC= 130°C, limited by external leads TC= 25°C, pulse width limited by TJM	Original	PDF	ID130 200N06/200N07 180N07 200N07 200N06 BT 1496
200N07 Abstract: 200N06 180N07 IXFN180 Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability	Original	PDF	150OC 100OC 200N07 200N06 180N07 IXFN180
mosfet 4800 Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30 Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055	OCR Scan	PDF	200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
200N06 Abstract: 4835 b 110N06 n Text: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 IXFK110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)	OCR Scan	PDF	IXFK110N06 O-264 OT-227 E153432 13Fig, 110NO6 200M06 110N07 200N06 4835 b 110N06 n
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Untitled Abstract: No abstract text available Text: □ IXYS HiPerFET Power MOSFETs IXFN 200 N06 IXFN180 N07 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L ow trr Symbol N07 N06 N07 N06 70 60 70 60 V V V V Continuous ±20 V Transient ±30 V 180 A Td = 25°C to 150°C; RGS = 1 M ß	OCR Scan	PDF	IXFN180 E153432 200N06/200N07 180N07 200N06 180N07 200N07

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200N06 Search Results

200N06 Price and Stock

Micro Commercial Components MCP200N06Y-BP

Cornell Dubilier Electronics Inc 382LX332M200N062

Micro Commercial Components MCB200N06Y-TP

Cornell Dubilier Electronics Inc 383LX332M200N062

Micro Commercial Components MCB200N06YA-TP

200N06 Datasheets Context Search

200N06P

Untitled

200N06

C1162

Untitled

sd 20n60

IXFN180

7N60B equivalent

C1146

200N07

200N07

mosfet 4800

200N06

ixys ixfn 55n50

8n80

Untitled