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    200MBS Search Results

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    200MBS Price and Stock

    TXC Corporation 7Q-19.200MBS-T

    XTAL OSC VCTCXO 19.2000MHZ SNWV
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    DigiKey 7Q-19.200MBS-T Reel 3,000
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    TXC Corporation 7L-19.200MBS-T

    XTAL OSC VCTCXO 19.2000MHZ SNWV
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    DigiKey 7L-19.200MBS-T Reel 3,000
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    Mouser Electronics 7L-19.200MBS-T
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    Newark 7L-19.200MBS-T Cut Tape 3,000
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    7L-19.200MBS-T Reel 3,000
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    Samtec Inc SCPU-10-G-02.00-MBS-AM

    CBL USB2.0 A PLG-MIN B PL W/COUP
    Free Sample
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    Samtec Inc SCRUS-10-G-02.00-MBS-MB

    Cable Assembly USB 2m 5 POS Sealed Circular Mini USB Type B to 5 POS Circular Mini USB Type B RCP-RCP - Bulk (Alt: SCRUS-10-G-02.00-M)
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    Samtec Inc SCRUS-10-G-02.00-MBS-BC

    Cable Assembly USB 2m 5 POS Sealed Circular Mini USB Type B RCP - Bulk (Alt: SCRUS-10-G-02.00-M)
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    Avnet Americas SCRUS-10-G-02.00-MBS-BC Bulk 1
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    Find more 200MBS price and stock on Findchips.com

    200MBS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Fairchild part numbering

    Abstract: GTLP16612 GTLP16616 GTLP16617 GTLP16T1655 GTLP17T616 GTLP18T612 GTLP6C816 GTLP6C816A GTLP6C817
    Text: GTLP Solutions GTLP Gunning Transceiver Logic Plus Product Line Card Overview The GTLP Advantage: • Reduced Output Swing • Tight Receiver Threshold • Signal Edge-rate Control • Low Voltage • Low Power • High Speed • Throughput Rates of 200Mbs - 30Gbs


    Original     		PDF 200Mbs 30Gbs 24-Lead GTLP16612, GTLP16616, GTLP16617 Fairchild part numbering GTLP16612 GTLP16616 GTLP16T1655 GTLP17T616 GTLP18T612 GTLP6C816 GTLP6C816A GTLP6C817

    ARM7 SPECIFICATIONS

    Abstract: common features of ARM9 ARM7 pin diagram ARM7DMI atmel utopia 11 5643as algorith for watchdog timer ARM7 pin configuration ARM9 AES ARM946 PIN
    Text: Features • Routing Functions Running on ARM946ES Interworking Processor with 8K Data Cache and 8K Instruction Cache Memory • Two Ethernet 10/100T-Base MAC Units with MII Interface to External PHY • Maximum Sustainable Wired Bandwidth: 200Mbs Half Duplex or 400 Mbs (Full


    Original     		PDF ARM946ESTM 10/100T-Base 200Mbs 11a/b/g ARM946E-STM 5643AS ARM7 SPECIFICATIONS common features of ARM9 ARM7 pin diagram ARM7DMI atmel utopia 11 algorith for watchdog timer ARM7 pin configuration ARM9 AES ARM946 PIN

    Sony IMX 183

    Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
    Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1


    Original     		PDF

    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF W3E32M64S-XBX 32Mx64 266Mb/s 625mm2 256MByte

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF W3E64M72S-XSBX 64Mx72 333Mbs* 512MByte 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs* W3E64M72S-XSBX 333Mbs

    VCCQ15

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply


    Original     		PDF 64Mx16 512Mb W3E64M16S-XSBX VCCQ15

    W3E32M64S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF W3E32M64S-XBX 32Mx64 333Mb/s 625mm2 256MByte 333Mbs W3E32M64S-XBX

    W3E32M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266, 333Mbs „ Package: BENEFITS • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


    Original     		PDF W3E32M72S-XBX 32Mx72 333Mbs 333Mbs W3E32M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS NOTICE: SEE ATTACHED ERRATA WHICH FOLLOWS THIS DOCUMENT FOR INFORMATION REGARDING CHANGED SPECIFICATIONS PDI1394L21 1394 full duplex AV link layer controller Preliminary specification Supersedes data of 1998 Dec 16 Philips Semiconductors


    Original     		PDF PDI1394L21 PDI1394L21 IEC61883 PDI1394L21,

    transistor 2Fn

    Abstract: Phychip IEC61883 LQFP144 PDI11394L40 PDI1394L40 PDI1394L40BE EIR25 PDI1394L40 1394
    Text: INTEGRATED CIRCUITS SEE THE LAST 2 PAGES OF THIS DATASHEET FOR A LIST OF ERRATA RELATED TO THIS PART. PDI1394L40 1394 enhanced AV link layer controller Preliminary specification Supersedes data of 2000 May 15 Philips Semiconductors 2000 Dec 15 Philips Semiconductors


    Original     		PDF PDI1394L40 PDI1394L40 transistor 2Fn Phychip IEC61883 LQFP144 PDI11394L40 PDI1394L40BE EIR25 PDI1394L40 1394

    16M x 16 DDR TSOP-66

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF 32Mx64 333Mb/s 625mm2 W3E32M64SA-XBX datHz/266Mbs 166MHz/333Mbs 16M x 16 DDR TSOP-66

    PDI1394L40BE

    Abstract: Phychip IEC61883 LQFP144 PDI11394L40 PDI1394L40
    Text: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.


    Original     		PDF PDI1394L40 PDI1394L40BE Phychip IEC61883 LQFP144 PDI11394L40

    Untitled

    Abstract: No abstract text available
    Text: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E32M72S-XB3X 32Mx72 333Mbs* 256MByte 256MB

    Untitled

    Abstract: No abstract text available
    Text: W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333* The 128MByte 1Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 2 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E64M16S-XSBX 64Mx16 128MByte 512Mb 128MB 256MB -12mA

    Untitled

    Abstract: No abstract text available
    Text: W3E64M72S-XBX 64Mx72 DDR SDRAM GENERAL DESCRIPTION FEATURES The 512MByte 4Gb DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM.  Data rate = 200, 250, 266 and 333Mbs*


    Original     		PDF W3E64M72S-XBX 64Mx72 512MByte 333Mbs* 512MB

    Untitled

    Abstract: No abstract text available
    Text: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E32M72S-XSBX 32Mx72 333Mbs* 256MByte 256MB 333Mbs 333Mbs, 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs* 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: IBM21S650PFA 1394 Serial Bus Link Layer PCI Controller Features • • • • • Fully IEEE 1394-1995 compatible General purpose IEEE 1394 Host Controller Asynchronous and isochronous capability Data rates: S100, S200, or S400Mb/s Standard Link-PHY protocol and an Isolation


    Original     		PDF IBM21S650PFA S400Mb/s 33MHz

    EN61326-1

    Abstract: EN-61326-1 100Mbs
    Text: Since environmentally controlled telecom closets aren’t common on the shop floor, RJ-Lnxx switches are built to thrive in adverse conditions. Enclosures are eliminated, and network design is simplified, while your business enjoys the highest level of data integrity


    Original     		PDF RJ-45 DW200206 EN61326-1 EN-61326-1 100Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XNBX 64Mx16 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 60 Plastic Ball Grid Array PBGA , 10mm x 12.5mm x 1.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply


    Original     		PDF 64Mx16 512Mb 200Mbs 250Mbs 266Mbs 333Mbs W3E64M16S-XNBX

    Sn63pB37 tds

    Abstract: W3E32M64S-XSBX TSOP66
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


    Original     		PDF W3E32M64S-XSBX 32Mx64 Sn63pB37 tds W3E32M64S-XSBX TSOP66

    PDI1394L40BE

    Abstract: PDI1394L40 1394
    Text: INTEGRATED CIRCUITS PDI1394L40 1394 enhanced AV link layer controller Preliminary specification Philips Semiconductors 2000 May 15 Philips Semiconductors Preliminary specification 1394 enhanced AV link layer controller PDI1394L40 1.0 FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF PDI1394L40 PDI1394L40 PDI1394L40BE PDI1394L40 1394