200JJS Search Results

Contextual Info: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications

KMM366F400BK

Contextual Info: K M M3 6 6 F 4 0 0 B K DRAM Module ELECTR O NICS KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The

ax292

Abstract: 50hz pure sine oscillator Butterworth
Contextual Info: ?9-45£S;A*v2.&9S _ General Description The MAX291/MAX292/MAX295/MAX296 are easy-to-use, 8th-order. low-pass, switched-capacitor filters that can be set up with corner frequencies from 0.1 Hz to 25kHz MAX291/MAX292 or 0.1 Hz to 50kHz (MAX295/MAX296).

200jjs

Contextual Info: CELESTICA 2M x 64 FPM BUFFERED DIMM FEATURES • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21 C, Fig. 4-13A, B, C, D, F Release 4 : No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3 ± 0.3V power supply

Contextual Info: 1M x 64 FPM UNBUFFERED DIMM CELESTICA FEATURES • • • • • • • • 168-pin industry standard 8-byte 8-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 5.0V ± 10% power supply TTL-compatible inputs and outputs

celestica

Contextual Info: CELESTICA 4M x 72 ECC EDO BUFFERED DIMM FEATURES • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21 -C, Fig. 4-13A, B, C, D, P Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbHlMS 00132^3 44b »SflGK KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fasi Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC I rc 70ns 20ns 130ns KM44C1010A-8 80ns 20ns

Contextual Info: CELESTICA 4M x 72 ECC EDO BUFFERED DIMM FEATURES • • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, P Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung

EN61000-4-2

Abstract: EN61000-4-3 EN61000-4-6 EXB50 EXB50-48S05
Contextual Info: T ARTESSrN C/n * E C H N O L O I* G I E EXB50 SERIES S Single output • High efficiency topology, 91% typical on EXB50-48S05 • Industry standard footprint • Wide operating temperature -40°C to +70°C natural convection • 60% to 110% output trim • No minimum load

4th order butterworth 50hz

Abstract: MAX291 MAX291CWE 50hz pure sine oscillator 300F0
Contextual Info: 19-4526: Rev 2: 6/96 8th-Order, Lowpass, Sw itched-Capacitor Filters The M AX291/MAX295 Butterworth filters provide m axi­ mally flat passband response, and the MAX292/MAX296 Bessel filters provide low overshoot and fast settling. All four filters have fixed responses, so the design task is

Contextual Info: CELESTICA 4M x 72 ECC FPM UNBUFFERED DIMM FEATURES • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: Preliminary Ballot 744.1 : No. 95 MO-161 High performance, CMOS Single 5.0V ± 10% power supply TTL-compatible inputs and outputs

Contextual Info: CELESTICA 1M x 32 EDO SIMM FEATURES • • • • • • • • • 72-pin industry standard 4-byte single-in-line memory module JEDEC compliant: 21-C, Fig. 4-18 A,B, Fig. 4-6 Release 6 No. 95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS

APEX MICRO

Contextual Info: 0 5 7 fiti3 ti S bE DDOlSHa OPEX 7^4 •AUT APEX MICROTECHNOLOGY CORP 2 0 WATT DC-DC CONVERTER AP EX M IC R O T E C H N O L O G Y C O R P O R A TIO N « T U C S O N . A R IZ O N A • A P P L IC A T IO N S H O TLIN E 8 0 0 4 2 1 - 1 8 6 5 r -rr-ii HI-REL DESIGN

Contextual Info: System Reset with built-in watchdog timer MM1145 MITSUMI System Reset (with built-in mratcliciog timer) Monolithic IC MM1145 This IC has a built-in watchdog timer, with 2 channels for a clock monitoring function that monitors the microcomputer and outputs an intermittent reset signal if the microcomputer runs wild. Also, it has a power

LF440

Contextual Info: 19-0192: Rev 1:11/93 H i g h - E f f i c i e n c y , PWM, S t e p - D o w n , N - C h a n n e l DC-DC C o n t r o l l e r _ G e n e r a l Features Description The MAX746 is a high-efficiency, high-current, step-down DC-DC power-supply controller that drives external N-channel FETs. It provides 93% to 96% efficiency from a 6Vsupply

Contextual Info: KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CELESTICA 1M x 64 FPM BUFFERED DIMM FEATURES • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, G Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3V ± 0.3V power supply

Contextual Info: CELESTICA 2M x 64 EDO BUFFERED DIMM FEATURES • • 168-pin industry standard 8-byte dual-in-tine memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, l Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 5.0V ± 10% power supply

Contextual Info: CMOS DRAM KM44C1000AL 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

transistor SMD 1p4

Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
Contextual Info: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab

634BI4

Abstract: 634AI5 Diode SOT-23 marking Jf 634A5 LM385 1.25V zener
Contextual Info: a run TECH! TECHNOLOGY LT1634 Micropower Precision Shunt Voltage Reference K fffU R C S D € S C iI P T I O i • Initial Voltage Accuracy: 0.05% ■ Low Operating Current: 10uA ■ Low Drift: 10ppm/°C Max ■ Less Than 1Q Dynamic Impedance ■ Available in 1,25V, 2.5V, 4.096V and 5V in SO-8