200FPM Search Results

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

MO-240

Abstract: 10dc rectifier
Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

FDMS2506SDC

Contextual Info: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

FDMS2510SDC

Abstract: 10-L41B-11
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

STK14C88-3NF35I

Abstract: SOP32 data sheet STK14C88-3 Simtek STK14C88
Contextual Info: STK14C88-3 32Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14C88-3 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

Contextual Info: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

FDMS8320LDC

Abstract: FDMS8320 l41b
Contextual Info: FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 130 A, 1.1 mΩ Features General Description „ Max rDS on = 1.1 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A This N-Channel MOSFET is produced using Fairchild

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

Contextual Info: FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

SSOP-48

Abstract: STK17TA8 STK17TA8-R STK17TA8-RF25
Contextual Info: STK17TA8 128k X 8 AutoStore nvSRAM with Real Time Clock Features Description • nvSRAM Combined with Integrated Real Time Clock Functions RTC, Watchdog Timer, Clock Alarm, Power Monitor ■ Capacitor or Battery Backup for RTC ■ 25, 45 ns Read Access and Read/Write Cycle Time

Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is pr oduced using Fairchild process. Semiconductor’s advanced Power Trench® Advancements in b oth silicon and Dual CoolTM package

V753

Abstract: FDMS86200DC
Contextual Info: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

FDMS86300DC

Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

STK14CA8-RF45I

Abstract: SSOP-48 STK14 STK14CA8 STK14CA8-NF25I ML0022
Contextual Info: STK14CA8 128Kx8 Autostore nvSRAM FEATURES DESCRIPTION • 25, 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14CA8 is a 1Mb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

SSOP-48

Abstract: STK14 STK14D88 0x07F0
Contextual Info: STK14D88 32Kx8 Autostore nvSRAM FEATURES DESCRIPTION • 25, 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14D88 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

kyocera CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: Matthey 100 PIN LEADLESS CHIP CARRIER kyocera kyocera PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC 20 PIN LEADLESS CHIP CARRIER kyocera kyocera 32 lead ceramic LCC package kyocera LCC ntk 32 lcc package stk 014 kyocera PACKAGE CERAMIC LEADLESS CHIP CARRIER
Contextual Info: Statement of Material Content Ceramic LCC Packages STK11C68-L STK12C68-L STK14C88-L This package type is not available in a lead-free version. Detail 28 350 LEADLESS CHIP CARRIER Unit 32 450 LEADLESS CHIP CARRIER PACKAGE MATERIALS Simtek Package ID Pin/Lead Count

Contextual Info: FDMS3006SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 90 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

Contextual Info: FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

K1426

Abstract: aluminium 6351 IBM3229P2035 SA-12E PALCE* programming
Contextual Info: â IBM Packet Routing Switch Serial Interface Converter Databook Advance â Copyright and Disclaimer  Copyright International Business Machines Corporation 1999, 2000, 2001 All Rights Reserved Printed in the United States of America March 2001 The following are trademarks of International Business Machines Corporation in the United States, or other countries, or both.

MARKING 3020

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package