200FIS Search Results

Contextual Info: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

ADC1001

Abstract: ADC0801 ADC1001CCJ ADC1001CCJ-1 J20A LM336 NSC800 10 Bit Shift Register
Contextual Info: National ADC1001 t ß Semiconductor ADC1001 10-Bit jaP Compatible A /D Converter General Description Easily interfaced to 6800 jxP derivatives with minimal external logic Differential analog voltage inputs Logic inputs and outputs meet both MOS and TTL volt­

Contextual Info: Fast PFET Buck Controller Does Not Require Compensation Description • The h ig h frequency oscillator allow s the use of sm all inductors a n d o u tp u t capacitors, m inim izing PC b o ard area and system s cost. The program m able soft start reduces current surges at start up.

TMS626812

Contextual Info: TMS626812 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY _ SMOS687A -JULY 1 9 9 6- REVISED APRIL 1997 • • • Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

Contextual Info: 19-1198; Rev0; 4/97 JV Y A Y A JV X / « to 3 -C ell, H ig h -C u rren t, Lo w -N o ise , S te p -U p D C -D C C o n v e rte rs w ith L in e a r R e g u la to r The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in

Intel 2118

Abstract: MB811B-10 DIP-16P-M01
Contextual Info: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad­ vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage

MCC72-12I01

Abstract: v06v 06io1 diode c72
Contextual Info: 4bE D • 4bôb22b 000116Ö 3 H I X Y I X Y S CORP BIXYS "T “25-Z3 Version 1 400 600 800 1200 1400 1600 MCC72-06ÌO1 MCC72-08ÎO1 MCC72-12Ì01 MCC72-14Ì01 MCC72-16Ì01 Test conditions ImMâi Ifmhs Tvj=T vjm Tc=85°C; 180°sin Itsmi Ifsm (di/dtJc Version 8

trw 8040

Abstract: l4b00
Contextual Info: IBM11M16735B IBM11M16735C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc pins) - Buffered PDs • 16Mx72 Extended Data Out Mode DIMMs • Performance:

lc87f

Contextual Info: Ordering number : ENN*6842 _ CMOS 1C LC8772C8B/B2B/96B/80B 8-Bit Single-Chip Microcontroller Preliminary Overview The L C 8772C 8B , L C 8772B 2B L C 8 7 7 2 9 6 B and L C 877280B are 8 bit single chip m icrocontrollers with the follow in g

VG46VS8325

Abstract: ic 3645 sh xaxs
Contextual Info: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)

Contextual Info: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6

KM48C2100ULL-6

Contextual Info: KM48C2100L/LL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C2100L/LL is a CMOS high speed 2,097,152 b itX 8 Dynamic Random Access Memory. It's design is optimized for high performance applications

HY53C464

Abstract: HY53C464-70 536X4 65536x4
Contextual Info: SIE D HYUNDAI ELECTRONICS • 4b7SOññ 0000SL3 32T « H Y N K MYUNDA HY53C464 SEMICONDUCTOI MK 4 liii M O* | U \ \ 1 M 121202 B-JAN 92 . FEATURES DESCRIPTION • Low power dissipation for HY53C464L — Operating Current, 100ns : 50mA (max.) — TTL Standby C u rren t: 2mA (max.)

1601L

Abstract: BY95A smd G5
Contextual Info: Fast PFET Buck Controller does not require Compensation Description The CS-51033 is a switching con­ troller for use in DC-DC converters. It can be used in the buck topology with a minimum num ber of exter­ nal components. The CS-51033 con­ sists of a 1.0A power driver for con­

KM41C4000/L

Abstract: KM41C4000
Contextual Info: SAMSUNG ELECTRONICS INC M 2E D 7^4142 QQ1D1S7 b ISM6K CMOS DRAM KM41C4000/L 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tflC K M 41C 4000/L- 8 80ns 20ns 150ns K M 41C 4000/L-10 100ns 25ns

pmi op07

Abstract: IC TTL 741 OP AMP PMI OP AMP pmi op42 op44 OPERATIONAL AMPLIFIERS PMI 2N4393 small signal amplifier JFET itt 2n4118 MAT-04
Contextual Info: ^A N A LO G DEVICES AN-108 APPLICATION NOTE ► ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 JFET-lnput Amps Are Unrivaled for Speed and Accuracy by Peter Henry JFET-input amplifiers provide an economical means of achiev­

IC 74C14

Abstract: catalyst 2736 CI 74C00 capacitor 100vf AN23-2 24 volt 200 w to mosfet inverter circuit diagram ic cd4066 PTC104 Voltage to Current Converter dual 4-20mA scheme LT1006
Contextual Info: r j untAß Application Note 23 April 1987 TECHNOLOGY Micropower Circuits for Signal Conditioning Jim Williams Low power operation of electronic apparatus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications are good candi­

CQ 765

Contextual Info: KMM594020A DRAM MODULES 4 M x 9 CMOS DRAM SIMM Memory Module, Low Power GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tñC KMM594020A-7 70ns 20ns 130ns KMM594020A-8 80ns 20ns 150ns KMM594020A-10 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability

Contextual Info: □PM DPE256S8N Dense-Pac Microsystems. Inc. ^ 256K X 8 CMOS EEPROM MODULE PRELIMINARY D ESC R IP T IO N : The D PE256S8N is a 256K X 8 high-density, low-power EEPROM module comprised of two ceramic 128K X 8 m onolithic EE P R O M 's, an ad vanced high-speed

e33i

Abstract: IC1001
Contextual Info: November 1990 Edition 2.0 FUJITSU DATA SHEET MB81C1001A-70L/-80L/-WL CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C1001A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001A has been designed lor mainframe

Contextual Info: y v i y j x i > k i 100% D u t y Cycl e, L o w -Noi se, S t e p - D o w n , PWM DC-DC C o n v e r t e r Features The MAX887 high-efficiency, step-down DC-DC con­ verter provides an adjustable output from 1.25V to 10.5V. It accepts inputs from 3.5V to 11V and delivers

Contextual Info: O K I Semiconductor MSM5 14800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D E S C R IP T IO N The M SM514800A/ ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the M SM514800A/ASL is OKI's CMOS silicon gate process

HYM591000AM

Abstract: bb04 HY531000
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted

KM44C1002A-8

Contextual Info: KM44C1002A_ CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications