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    2000 THERMAL HEAD PANASONIC Search Results

    2000 THERMAL HEAD PANASONIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    2000 THERMAL HEAD PANASONIC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    j152

    Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
    Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7 PDF

    HVV1214-140

    Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
    Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain


    Original     		HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB PDF

    ERJ8GEYJ100V

    Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
    Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V


    Original     		HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S PDF

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346 PDF

    GROUND BASED RADAR

    Abstract: transistor SMD R1D
    Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications


    Original     		HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D PDF

    mode 5 IFF

    Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
    Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00 PDF

    ANUJ6150

    Abstract: dvd Lens ANUJ6140 ANUP5256 DVD LENS circuit diagrams DVD optical pick-up assembly ANUP5252L power supply of uv curing lamp wd 40 ANUP5204
    Text: International standard spot-type model • The UV auto control function provides stable, high output UV irradiation over the entire lamp life. ANUP5204 ● Worldwide compatible power supply range from 100 to 240 V AC ● By consuming 40% less power than conventional models, this unit


    Original     		ANUP5204 ANUP5204: ANUP505011 ARCT1B282E-2 000mW/cm2 500mW/cm2 145mm 120mm ANUJ6150 dvd Lens ANUJ6140 ANUP5256 DVD LENS circuit diagrams DVD optical pick-up assembly ANUP5252L power supply of uv curing lamp wd 40 ANUP5204 PDF

    600S2R7BT250XT

    Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. SOF-26 AN-090, EDS-104157 600S2R7BT250XT ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85 PDF

    panasonic inverter manual vf 200

    Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
    Text: 02/04/2013 Overview Panasonic automation products Panasonic offers a broad spectrum of products for all automation tasks, sensors, PLCs, HMIs, Servo Drives and FA Components. Along with our service philosophy to advise and take care of our customers, products


    Original     		RM1205-9, panasonic inverter manual vf 200 panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z PDF

    600S4R7BT250

    Abstract: ecj2yb1h104k
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V 600S4R7BT250 ecj2yb1h104k PDF

    TPSE156035R0200

    Abstract: LM257X MIC4680 CDRH125-680MC SS26 1N4148 B260A G12AP MIC4680BM CDRH124-680MC
    Text: MIC4680 Evaluation Board Micrel MIC4680 Evaluation Board SuperSwitcher SOP-8 Buck Switching Regulator 200kHz 4V to 34V/1A shows the 5V output efficiency versus input voltage and output current. Precautions MIC4680 has no protection from reversed polarity being


    Original     		MIC4680 200kHz 100mA) TPSE156035R0200 LM257X CDRH125-680MC SS26 1N4148 B260A G12AP MIC4680BM CDRH124-680MC PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023 PDF

    Untitled

    Abstract: No abstract text available
    Text: SP2T PIN Diode Switches MSW2000-200, MSW2001‐200, MSW2002‐200 Data Sheet Features • Wide Frequency Range: 50 MHz to 6 GHz, in 3 bands • Surface Mount SP2T Switch in Compact Outline: • • 8 mm L x 5 mm W x 2.5 mm H Higher Average Power Handling than Plastic Packaged


    Original     		MSW2000â MSW2001â MSW2002â PDF

    A514

    Abstract: A638 TMS320C6455 MDIO EMAC TMS320C6455 rapid io MAR221 40-bit-long C6455 Evaluation Module A634 TMS320C6455 1 a250
    Text: www.ti.com TMS320C6455 Fixed-Point Digital Signal Processor SPRS276 – MAY 2005 TMS320C6455 Fixed-Point Digital Signal Processor 1.1 • • • • • • • • • Features High-Performance Fixed-Point DSP C6455 – 1.39-, 1.17-, 1-ns Instruction Cycle Time


    Original     		TMS320C6455 SPRS276 C6455) 850-MHz 32-Bit TMS320C64x 32-/16-Bit) TMS320C64x+ 256K-Bit A514 A638 TMS320C6455 MDIO EMAC TMS320C6455 rapid io MAR221 40-bit-long C6455 Evaluation Module A634 1 a250 PDF

    ELXY

    Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON PDF

    rectifier wiring diagram

    Abstract: rs485 to rs232 converter lineage 2000 power plant ECS 2VR375E J85501D-2 ah1435 lucent 364b2 WP91412 lineage 2000 ecs lineage 2000 ecs power plant controller
    Text: Product Manual H569-420 Select Code 167-790-062 Comcode 107539926 Issue 5 February 1997 Lineage 2000 600-Ampere, +24-Volt ECS Minicell Battery Plant Notice: Every effort was made to ensure that the information in this document was complete and accurate at the time of printing.


    Original     		H569-420 600-Ampere, 24-Volt 1-800-CAL-RTAC) rectifier wiring diagram rs485 to rs232 converter lineage 2000 power plant ECS 2VR375E J85501D-2 ah1435 lucent 364b2 WP91412 lineage 2000 ecs lineage 2000 ecs power plant controller PDF

    6181P-15TSXPH

    Abstract: 6181P 6181P-15TPXPH 6181P-15TPXP 6181P-17TPXP 6181F-15TPXPH 6181P-12TPXPH 17-inch lcd monitor 6181P-17TPXPH 6181P-12TPXP
    Text: Integrated Display Computers User Manual Catalog Numbers 6181P-12NSXPH, 6181P-12NPXPH, 6181P-12TSXPH, 6181P-12TPXPH, 6181P-12TPXPHDC, 6181P-15NSXPH, 6181P-15NPXPH, 6181P-15TSXPH, 6181P-15TPXPH, 6181P-15TPXPHSS, 6181P-17NSXPH, 6181P-17NPXPH, 6181P-17TSXPH,


    Original     		6181P-12NSXPH, 6181P-12NPXPH, 6181P-12TSXPH, 6181P-12TPXPH, 6181P-12TPXPHDC, 6181P-15NSXPH, 6181P-15NPXPH, 6181P-15TSXPH, 6181P-15TPXPH, 6181P-15TPXPHSS, 6181P-15TSXPH 6181P 6181P-15TPXPH 6181P-15TPXP 6181P-17TPXP 6181F-15TPXPH 6181P-12TPXPH 17-inch lcd monitor 6181P-17TPXPH 6181P-12TPXP PDF

    RFPA3806TR7

    Abstract: trace code marking RFMD EEF-10
    Text: RFPA3806 RFPA3806 GaAs HBT 2STAGE POWER AMPLIFIER GaAs HBT 2-STAGE POWER AMPLIFIER 700MHZ TO 2700 MHZ NC 5 NC 6 700MHz to 2700MHz Operation Applications      GaAs Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure


    Original     		RFPA3806 RFPA3806 700MHZ 14GHz 50dBm 2700MHz DS110224 PA3806 RFPA3806TR7 trace code marking RFMD EEF-10 PDF

    HC16201

    Abstract: Motorola TE 2556 es10 dec diode is62256-70w repair lcd monitor samsung AN054 JTAG Information samsung u2 cable 1N4148 1N4004 tc55257dpl-70L res0805-1001
    Text: DK8_HC11 USER MANUAL DK68HC11-52J-110/220 Development Board CONTENTS • Please see next page January 2002 1/3 CONCEPT. 2


    Original     		DK68HC11-52J-110/220 HC16201 Motorola TE 2556 es10 dec diode is62256-70w repair lcd monitor samsung AN054 JTAG Information samsung u2 cable 1N4148 1N4004 tc55257dpl-70L res0805-1001 PDF

    HC16201

    Abstract: PSD813 is62256-70w AN054 JTAG Information HC11 PSD813F PSD813F1 micrel tx battery 3v EVM-HC11 grm39
    Text: waferscale.com WSI Development Kit DK68HC11-52J-110/220 47280 Kato Road, Fremont, California 94538-7333 Phone: 510-656-5400 , 800-832-6974 Fax: 510-657-5916 E-mail: info@waferscale.com Web Site: http://www.waferscale.com Return to Main Menu CONCEPT. 2


    Original     		DK68HC11-52J-110/220 HC16201 PSD813 is62256-70w AN054 JTAG Information HC11 PSD813F PSD813F1 micrel tx battery 3v EVM-HC11 grm39 PDF

    xed 2013

    Abstract: Motorola TE 2556 HC16201 repair lcd monitor samsung TST-107-01-L-D IS622 SCHEMATIC ATI graphics card 1206ZC105MAT2A rm10f1002ct lcd interface with 8051
    Text: waferscale.com WSI Development Board DK68HC11-52J-110/220 47280 Kato Road, Fremont, California 94538-7333 Phone: 510-656-5400 , 800-832-6974 Fax: 510-657-5916 E-mail: info@waferscale.com Web Site: http://www.waferscale.com CONCEPT. 2


    Original     		DK68HC11-52J-110/220 xed 2013 Motorola TE 2556 HC16201 repair lcd monitor samsung TST-107-01-L-D IS622 SCHEMATIC ATI graphics card 1206ZC105MAT2A rm10f1002ct lcd interface with 8051 PDF

    TA2022-100

    Abstract: tripath for car audio amplifiers 100w audio amplifier circuit diagram per channel P12397-ND TA2022 RB-TA2022 100 100w stereo amplifier 100w audio amplifier schematic AW-690-06-44T-22-V 100w car amplifier
    Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm a ti on RB-TA2022 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TA2022 REFERENCE DESIGN Technical Information – Board Rev. 2.2 Revision 1.1 – JUNE 2005 GENERAL DESCRIPTION The RB TA2022 Version 2.2 is a stereo 100W per channel audio amplifier in a slim 3”


    Original     		RB-TA2022 TA2022 TA2022 TA2022, 00W/Channel therm80 DR77055. C3B-A0349. TA2022-100 tripath for car audio amplifiers 100w audio amplifier circuit diagram per channel P12397-ND RB-TA2022 100 100w stereo amplifier 100w audio amplifier schematic AW-690-06-44T-22-V 100w car amplifier PDF