200 AVALANCHE RECTIFIER Search Results

AGP15-200

Contextual Info: AGP15-200 THRU AGP15-800 MINIATURE GLASS PASSIVATED JUNCTION PLASTIC CONTROLLED AVALANCHE RECTIFIER Voltage - 200 to 800 Volts Current - 1.5 Amperes FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ Controlled Avalanche characteristic combined

Contextual Info: AGP15-200 THRU AGP15-800 MINIATURE GLASS PASSIVATED JUNCTION PLASTIC CONTROLLED AVALANCHE RECTIFIER Voltage - 200 to 800 Volts Current - 1.5 Amperes FEATURES ♦ High temperature metalluigically bonded con­ structed rectifiers ♦ Controlled Avalanche characteristic combined

Contextual Info: AGP15-200 THRU AGP15-800 MINIATURE GLASS PASSIVATED JUNCTION PLASTIC CONTROLLED AVALANCHE RECTIFIER Voltage - 200 to 800 Volts Current - 1.5 Amperes FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Controlled Avalanche characteristic combined

Contextual Info: 3 AMP AXIAL LEAD DIFFUSED SILICON RECTIFIERS 100A and 200A peak surge current Controlled avalanche series has 250V, 450V, 650V and 850V min. avalanche voltages VBR Non-controlled avalanche series with 50V, 100V, 200V, 400V, 600V, 800V and 1000V (VRRM) Fast recovery series with 200 nanosec.

BYW81PI-200

Abstract: BYW81G-200 BYW81P BYW81P-200 BYW81PI
Contextual Info: BYW81G-200 BYW81P-200 / BYW81PI-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION :

V3510

Contextual Info: MICRO QUALITY / S E M ICO ND UC TO R , INC. 3 Amp Diffused Silicon Epoxy Rectifiers with 200 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings

BYW81G-200

Abstract: BYW81P BYW81P-200 BYW81PI BYW81PI-200
Contextual Info: BYW81G-200 BYW81P-200 / BYW81PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES K FEATURES • ■ ■ ■ ■ ■ A SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION :

Contextual Info: BYW81G-200 BYW81P-200 / BYW81PI-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES K FEATURES • ■ ■ ■ ■ ■ A SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION :

BYW81G-200

Abstract: BYW81P BYW81P-200 BYW81PI BYW81PI-200 byw8
Contextual Info: BYW81G-200 BYW81P-200 / BYW81PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES K FEATURES • ■ ■ ■ ■ ■ A SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION :

VS148

Abstract: VS248 VS647 VS447 VH247 VJ847 VH148 VE48 VE87 VE88
Contextual Info: [jg [^ 5 EPOXY BRIDGE RECTIFIERS 1 AM P 2 & 6 AMP 10 AMP • Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche volt- age V ■ Non-controlled Avalanche series with 50V, 100V, 200V, 400V, 600V and aoov, and 1000 (vRR> ■ Fast recovery series with 200 nanosec.

A1615

Abstract: BYW81P BYW81P-200 BYW81PI BYW81PI-200 BYW81PI200
Contextual Info: BYW81P-200 BYW81PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 VRMS

BYW81PI-200

Abstract: BYW81P BYW81P-200 BYW81PI
Contextual Info: BYW81P-200 BYW81PI-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 VRMS

V348

Abstract: v354 V342 V344 V346 V350 V351 V3510 V352 V356
Contextual Info: MICROSEMI CORP/ MICRO 5bE D • bllS'îG? 0Q0132S Q5b ■ MÛL / 7 0 1 -1 5 - MICRO QUALITY / SEMICONDUCTOR, INC 7^ 3^5 ^ ^ 3 Amp Diffused Silicon Epoxy Rectifiers with 200 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings

D2580

Abstract: CHIP T 409 ES 106N20 IXFK90N20
Contextual Info: □IXYS HiPerFET Power MOSFETs IXFK90N20 IXFN106 N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions V DSS ^ vDQR Maximum Ratings IXFN IXFK = 25°C to 150°C 200 200 V Tj = 25°C to 150°C; RQS= 1 MQ 200 200 V VGS V tgsm

syntron rectifier

Abstract: Syntron OCTAL SOCKET PLUG-IN SILICON RECTIFIER OB4H1 OB4C1 syntron diode OB4B1 OB261
Contextual Info: u I Avalanche Silicon Rectifier Octal Base Assemblies 41 ( 5 | Cat. No. Max. PRV Rating per Circuit Arm Type Circuit OB2B1 200 Single Phase OB4B1 400 Full W ave Bridge OB8B1 800 Cat. No. Max. PRV Rating per Circuit Arm OB2C1 200 Type Circuit Max. DC Amps

6 r 360

Abstract: 106N20 100n20 IXFK90N20
Contextual Info: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions

IRFP9240R

Abstract: IFP92 IRFP9243R 9243 IRFP IRFP9240 IRFP9241 IRFP9241R IRFP9242R
Contextual Info: _ Rugged Power MOSFETs File Num ber IRFP9240R, IRFP9241R, IRFP9242R, IRFP9243R 2294 Avalanche-Energy-Rated P-Channel Power MOSFETs -10 A and -12 A, 200 V and 150 V rDston = 0.50 fi and 0.70 fi TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated

125OC

Abstract: IXFK72N20 IXFK80N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

PLUS247

Abstract: LD25 a54 SMD DIODE
Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFX90N20Q IXFX90N20QS V DSS ^D25 = 200 V = 90 A = 22 mQ Q Class trr < 200 ns N-Channel Enhancement Mode Avalanche Rated LowQg, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V v DGR

74n20

Abstract: 36gd
Contextual Info: PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: VDSS ID25 PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings

sod6 package

Abstract: SOD6 0-170A
Contextual Info: SMBYW01-200  HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 200 V VF(max) 0.71 V PRELIMINARY DATASHEET FEATURES AND BENEFITS VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP HIGH REVERSE AVALANCHE ENERGY CAPABILITY SOD6