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    200 A 200V MOSFET Search Results

    200 A 200V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    200 A 200V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXMP2120FFTA

    Abstract: No abstract text available
    Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,


    Original     		PDF ZXMP2120FF OT23F D-81541 ZXMP2120FFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,


    Original     		PDF ZXMP2120FF OT23F 48mbH D-81541

    19nb20

    Abstract: l7812 STP19NB20 STP19NB20FP STB19NB20-1 DSASW003744
    Text: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω


    Original     		PDF STP19NB20 STP19NB20FP STB19NB20-1 O-220/TO-220FP/I2PAK STP19NB20 O-220 19nb20 l7812 STP19NB20FP STB19NB20-1 DSASW003744

    W75N20

    Abstract: stp75n20 P75N20
    Text: STB75N20 STP75N20 - STW75N20 N-CHANNEL 200V - 0.028Ω - 75A - D²PAK - TO-247 - TO-220 LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB75N20 STP75N20 STW75N20 200 V 200 V 200 V <0.034Ω <0.034Ω <0.034Ω 75 A


    Original     		PDF STB75N20 STP75N20 STW75N20 O-247 O-220 O-247 O-220 W75N20 P75N20

    B19NB20

    Abstract: STP19NB20
    Text: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω


    Original     		PDF O-220/TO-220FP/I2PAK STP19NB20 STP19NB20FP STB19NB20-1 O-220 O-220FP STP19NB20/FP/STB19NB20-1 B19NB20

    B19NB20

    Abstract: 19NB20 STP19NB20
    Text: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω


    Original     		PDF O-220/TO-220FP/I2PAK STP19NB20 STP19NB20FP STB19NB20-1 O-220 O-220FP STP19NB20/FP/STB19NB20-1 B19NB20 19NB20

    STP19NB20

    Abstract: 19NB20 B19NB20 STB19NB20-1 STP19NB20FP
    Text: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω


    Original     		PDF STP19NB20 STP19NB20FP STB19NB20-1 O-220/TO-220FP/I2PAK STP19NB20 19NB20 B19NB20 STB19NB20-1 STP19NB20FP

    19NF20

    Abstract: STF19NF20 STB19NF20
    Text: STB19NF20, STF19NF20, STP19NF20 N-channel 200 V, 0.15Ω typ., 15 A MESH OVERLAY Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet — production data Features TAB Type VDSS RDS on ID pw STB19NF20 200V <0.16Ω 15A 90W 3 1 STF19NF20 200V <0.16Ω


    Original     		PDF STB19NF20, STF19NF20, STP19NF20 O-220FP O-220 STB19NF20 STF19NF20 O-220FP O-220 19NF20

    W40N20

    Abstract: STP40N20
    Text: STP40N20 STW40N20 N-CHANNEL 200V - 0.040Ω - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP40N20 STW40N20 200 V 200 V < 0.045 Ω < 0.045 Ω 40 A 40 A 160 W


    Original     		PDF STP40N20 STW40N20 O-220/TO-247 STP40N20 O-220 O-247 W40N20

    w40n20

    Abstract: STP40N20 STW40N20
    Text: STP40N20 STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP40N20 STW40N20 200 V 200 V < 0.045 Ω < 0.045 Ω 40 A 40 A 160 W 160 W • ■ ■ ■


    Original     		PDF STP40N20 STW40N20 O-220/TO-247 w40n20 STP40N20 STW40N20

    p10nb20

    Abstract: p10nb20f p10nb
    Text: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω


    Original     		PDF O-220/TO-220FP STP10NB20 STP10NB20FP STP10NB20FP O-220 O-220FP p10nb20 p10nb20f p10nb

    p10nb20

    Abstract: p10nb20f p10nb20fp p10nb p10nb2 620 diode STP10NB20 STP10NB20FP P10n
    Text: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω


    Original     		PDF STP10NB20 STP10NB20FP O-220/TO-220FP O-220 p10nb20 p10nb20f p10nb20fp p10nb p10nb2 620 diode STP10NB20 STP10NB20FP P10n

    SSP45N20A

    Abstract: ssp45n20a equivalent
    Text: SSP45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V


    Original     		PDF SSP45N20A O-220 SSP45N20A ssp45n20a equivalent

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET

    IRF630

    Abstract: IRF630FP
    Text: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630 IRF630FP O-220/FP IRF630F O-220 O-220FP IRF630 IRF630FP

    IRF650A

    Abstract: IRF650
    Text: IRF650A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V


    Original     		PDF IRF650A O-220 IRF650A IRF650

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm

    IRF630

    Abstract: mosfet morocco IRF630FP IRF630 p
    Text: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630 IRF630FP O-220/FP IRF630F O-220 O-220FP IRF630 mosfet morocco IRF630FP IRF630 p

    power MOSFET IRF640 fp

    Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
    Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V DSS R DS on ID IRF640 IRF640FP 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A • ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V


    Original     		PDF IRFW/I640A

    SSF45N20A

    Abstract: No abstract text available
    Text: SSF45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 26.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		PDF SSF45N20A SSF45N20A

    40v N- and P-Channel dip

    Abstract: No abstract text available
    Text: SFM9210 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10^A Max. @ VOS = -200V


    OCR Scan     		PDF -200V SFM9210 OT-223 40v N- and P-Channel dip

    mospet

    Abstract: No abstract text available
    Text: IRFS650A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS = 200V


    OCR Scan     		PDF IRFS650A mospet