200 A 200V MOSFET Search Results

ZXMP2120FFTA

Contextual Info: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,

Contextual Info: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,

19nb20

Abstract: l7812 STP19NB20 STP19NB20FP STB19NB20-1 DSASW003744
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

W75N20

Abstract: stp75n20 P75N20
Contextual Info: STB75N20 STP75N20 - STW75N20 N-CHANNEL 200V - 0.028Ω - 75A - D²PAK - TO-247 - TO-220 LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB75N20 STP75N20 STW75N20 200 V 200 V 200 V <0.034Ω <0.034Ω <0.034Ω 75 A

B19NB20

Abstract: STP19NB20
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

B19NB20

Abstract: 19NB20 STP19NB20
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

STP19NB20

Abstract: 19NB20 B19NB20 STB19NB20-1 STP19NB20FP
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

19NF20

Abstract: STF19NF20 STB19NF20
Contextual Info: STB19NF20, STF19NF20, STP19NF20 N-channel 200 V, 0.15Ω typ., 15 A MESH OVERLAY Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet — production data Features TAB Type VDSS RDS on ID pw STB19NF20 200V <0.16Ω 15A 90W 3 1 STF19NF20 200V <0.16Ω

W40N20

Abstract: STP40N20
Contextual Info: STP40N20 STW40N20 N-CHANNEL 200V - 0.040Ω - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP40N20 STW40N20 200 V 200 V < 0.045 Ω < 0.045 Ω 40 A 40 A 160 W

w40n20

Abstract: STP40N20 STW40N20
Contextual Info: STP40N20 STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP40N20 STW40N20 200 V 200 V < 0.045 Ω < 0.045 Ω 40 A 40 A 160 W 160 W • ■ ■ ■

p10nb20

Abstract: p10nb20f p10nb
Contextual Info: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω

p10nb20

Abstract: p10nb20f p10nb20fp p10nb p10nb2 620 diode STP10NB20 STP10NB20FP P10n
Contextual Info: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω

SSP45N20A

Abstract: ssp45n20a equivalent
Contextual Info: SSP45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V

IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF630

Abstract: IRF630FP
Contextual Info: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF650A

Abstract: IRF650
Contextual Info: IRF650A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V

irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF630

Abstract: mosfet morocco IRF630FP IRF630 p
Contextual Info: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

power MOSFET IRF640 fp

Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Contextual Info: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V DSS R DS on ID IRF640 IRF640FP 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A • ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

Contextual Info: IRFW/I640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V

40v N- and P-Channel dip

Contextual Info: SFM9210 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10^A Max. @ VOS = -200V

SSF45N20A

Contextual Info: SSF45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 26.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

mospet

Contextual Info: IRFS650A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS = 200V