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    20 MKI 5 Search Results

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    20 MKI 5 Price and Stock

    STMicroelectronics STEVAL-MKI208V1K

    Acceleration Sensor Development Tools iNemo inertial module kit based on IIS3DWB
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    Mouser Electronics STEVAL-MKI208V1K 77
    • 1 $31.25
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    STMicroelectronics STEVAL-MKI207V1

    Multiple Function Sensor Development Tools ISM330DHCX adapter board for a standard DIL24 socket
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics STEVAL-MKI207V1 39
    • 1 $17.15
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    STMicroelectronics STEVAL-MKI205V1

    Position Sensor Development Tools LPS33W adapter board for a standard DIL24 socket
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics STEVAL-MKI205V1 37
    • 1 $17.59
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    STMicroelectronics STEVAL-MKI220V1

    Pressure Sensor Development Tools LPS27HHTW adapter board for a standard DIL 24 socket
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics STEVAL-MKI220V1 33
    • 1 $17.15
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    STMicroelectronics STEVAL-MKI209V1K

    Position Sensor Development Tools MEMS inclinometer kit based on IIS2ICLX
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    Mouser Electronics STEVAL-MKI209V1K 28
    • 1 $32.2
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    20 MKI 5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 441

    Abstract: No abstract text available
    Text: MWI 75-12 E8 MKI 75-12 E8 IC25 = 130 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI MKI Features IGBTs


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    MWI75-12E8 diode 441 PDF

    MWI75-12E8

    Abstract: igbt sixpack TR1005
    Text: MWI 75-12 E8 MKI 75-12 E8 IC25 = 130 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI MKI Features IGBTs


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    MWI75-12E8 MWI75-12E8 igbt sixpack TR1005 PDF

    welding transformer

    Abstract: ac motor winding 1001-2
    Text: MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA Preliminary 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI MKI


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    welding transformer

    Abstract: ac motor winding
    Text: MWI 75-12 E8 MKI 75-12 E8 IC25 = 130 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA Preliminary 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI MKI


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    TR 7512

    Abstract: ixys 75-12
    Text: MWI 75-12 E8 MKI 75-12 E8 IC25 = 130 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA Preliminary 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI MKI


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    MWI75-12E8

    Abstract: DIODE 33 25
    Text: MWI 75-12 E8 MKI 75-12 E8 IC25 = 130 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI MKI Features IGBTs


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    MWI75-12E8 MWI75-12E8 DIODE 33 25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 E72873 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology


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    80-06T6K E72873 20111110b 80-06T6K MKI80-06T6K PDF

    Untitled

    Abstract: No abstract text available
    Text: MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A VCES = 1200 V VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 3 7 11 4 14, 20 8 12 3 4 14, 20 12 19 17 15 MWI 19 15 11 E72873 See outline drawing for pin arrangement


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    E72873 MWI100-12E8 20070912a PDF

    Untitled

    Abstract: No abstract text available
    Text: MWI 75-12 E8 MKI 75-12 E8 IC25 = 130 A VCES = 1200 V VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 2 6 10 1 9 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI E72873 See outline drawing for pin arrangement


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    E72873 MWI75-12E8 20070912a PDF

    IGBT MOTOR CONTROL

    Abstract: IGBT K 40 T 2002 MJ75
    Text: MKI 75-06 A7 IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Preliminary Data B3 Features IGBTs ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings ● ● 600 V ± 20 V 90 60 A A ICM = 120


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    MWI7506A7 IGBT MOTOR CONTROL IGBT K 40 T 2002 MJ75 PDF

    Untitled

    Abstract: No abstract text available
    Text: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A VCES = 600 V VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 14 T6 T2 D2 D6 11 T 3 12


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    MWI5006A7 20110119a PDF

    diode 331

    Abstract: No abstract text available
    Text: MWI 50-12 E7 MKI 50-12 E7 IC25 = 90 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 13 1 5 9 1 9 2 6 10 2 10 16 16 15 14 14 3 7 11 3 11 4 17 8 12 4 17 12 MWI MKI Features IGBTs Symbol Conditions


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    MWI5012E7 diode 331 PDF

    H bridge 300v 30a

    Abstract: MKI 50-06 A7
    Text: MKI 50-06 A7 IC25 = 72 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA 13 T5 T1 Preliminary Data D1 D5 9 1 10 2 16 T2 14 T6 D2 D6 11 3 12 4 17 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C


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    MWI5006A7 H bridge 300v 30a MKI 50-06 A7 PDF

    NTC resistor T5

    Abstract: MKI 75-06 A7
    Text: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12


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    MWI7506A7 NTC resistor T5 MKI 75-06 A7 PDF

    igbt simulation

    Abstract: NTC 15 0548 D1910
    Text: MKI 65-06 A7 MKI 65-06 A7T IC25 = 100 A = 600 V VCES VCE sat typ = 2.0 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 65-06 A7 MKI 65-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T Preliminary data


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    B25/50 igbt simulation NTC 15 0548 D1910 PDF

    MK3P-i omron

    Abstract: MK3P-I MK3P omron omron MK3P5-S omron MK3P5-I MK3P-I RELAY 11 pin relay MK3P-I OMRON MK3P MK2P-I application omron MK3P5-S relay
    Text: General-purpose Relay MK-I/-S Exceptionally Reliable General-purpose Relay Features Mechanical Indicator/Push Button • Breaks relatively large load currents despite small size. • Long life minimum 100,000 electrical operations assured by silver contacts.


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    wima 0,47 63

    Abstract: wima 0.01 MF 63 V CAPACITOR MF CAPACITOR 165 mf WIMA 0,068
    Text: D WIMA MKI 2 NEW Metallized Polyphenylene-Sulphide PPS Capacitors in PCM 5 mm Special Features Electrical Data Operating temperature up to 140° C Self-healing Low dissipation factor Low dielectric absorption Very constant capacitance value versus temperature


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    2002/95/EC mm/20 wima 0,47 63 wima 0.01 MF 63 V CAPACITOR MF CAPACITOR 165 mf WIMA 0,068 PDF

    GE-757

    Abstract: FIA5486
    Text: D=FB8LERA ?KQLM=F ?=H DECD MAGJAK=MNKA DAKGAME?=FFQ LA=FA@ AFA?MKI G=CHAME? KAF=Q DB;:9: E[Wjkh[i 4 4 4 4 4 @cX_[dj j[cf[hWjkh[ YWd X[ 5<4 G_]^ fkh[ d_jhe][d fhej[Yj_ed G_]^ WcX_[dj Wffb_YWX_b_jo @bb c[jWb m[bZ[Z YedijhkYj_ed G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h


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    FIA5486 KHJ1O19 c3i6/63Gp 5429cWn 79cWn GE-757 PDF

    Teledyne Semiconductor

    Abstract: "teledyne components" TSC442 teledyne 325
    Text: TELEDYNE COMPONENTS 23E Ô IlT b Q S TELEDYNE SEMICONDUCTOR 0005^30 4 TSC441 TSC442 TSC443 The Analog Signal Processing Com pany //PROCESSOR COMPATIBLE CMOS ANALOG SWITCHES FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Timing Diagram Data Address Latch On-Chip


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    TSC441 TSC442 TSC443 DG201 DG221 TSC441) TSC443 Clos00 Teledyne Semiconductor "teledyne components" teledyne 325 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F32128C ^ ED I B»c fronte D w Ijm In c , High Speed Four Megabit SRAM Module [p^iyiDi^OT 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C is a high speed4 megabit Static RAM module organized as 128K words by 32 bits. This module is


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    EDI8F32128C 128Kx32 EDI8F32128C 128Kx8 EDI8F32128C15MMC EDI8F32128C20MMC EDI8F32128C25MMC EDI8F32128C30MMC PDF

    MIL-C-15370

    Abstract: No abstract text available
    Text: These directional couplers feature compact packaging and four port construction. This combination permits flexibility in systems designs. They are intended for test and measurement setups as well as for systems use. Temperature range is -54 to +110°C. These units incorporate three miniature, low VSWR, OSM jack


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    MIL-E-5400 MIL-E-16400 MIL-C-15370/10 MIL-C-15370/10. dimensions75 MIL-C-15370 PDF

    Untitled

    Abstract: No abstract text available
    Text: • • • • Frequency Range: 0.5 - 50 GHz Standard Coupling Values: 10,13,16 and 20 dB Temperature Range: -54° to + 125°C Connectors: OSM/SMA per MIL-C-39012, 15mm or OS-50 2.4mm • Isolated Port with Non-removable 50 ohm Termination SPECIFICATIONS


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    MIL-C-39012, OS-50 PDF

    Untitled

    Abstract: No abstract text available
    Text: MbE J> t3b?SS4 00^2157 4 • HOTbT'31‘2 3 MOTOROLA SC X S T R S /R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3553HV Chip NPN Silicon High-Frequency Transistor DM0 uum Discrete Military Operation . . .designed ter am plifier and oscillator applications. Suitable as output, driver or predriver


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    2C3553HV PDF

    Untitled

    Abstract: No abstract text available
    Text: P i-O S -H -A I WIMA MKI 2 PCM Metallized polyphenylene-sulphide capacitors in P C M 5 mm • Ideally suited for temperatures up to +140° C. ■ Very constant capacitance value with temperature. ■ Low dissipation factor tan 5 . ■ Low dielectric absorption. ■ In virtue of high temperature


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    PDF