2.4 GHZ LOCAL OSCILLATOR Search Results

VCO GHz

Abstract: 2,4 ghz VCO 1.4 GHz 8 GHz VCO 5.8 GHz 2.4 GHz local oscillator transverter 2.4 GHZ RECEIVER ML5825
Contextual Info: RFMD ML5825 2.4 GHz to 5.8 GHz Frequency Translator The ML5825 is a highly integrated 2.4 GHz to 5.8 GHz frequency translator transverter . It upconverts 2.4 GHz signals to 5.8 GHz and downconverts received 5.8 GHz signals to 2.4 GHz. Transmit and receive utilize the same low noise fixed local oscillator (LO).

Bandpass filter SAW 2.4 GHz 50 Ohm

Abstract: CMOS LNA at 2.4 GHz circuit diagram of 6 channel 2.4ghz rf receiver GRF4101 GCT SEMICONDUCTOR RF vga adc LNA Mixer VCO 2.4 GHz 2.4GHz 6 channel rf receiver circuit
Contextual Info: CoreRF - GRF4101 CMOS 2.4 GHz Spread Spectrum Receiver GRF4101 CMOS 2.4GHz Spread Spectrum Receiver standards for a 2.4 GHz W-CDMA wireless local loop system. General Descriptions The GRF4101 receiver is designed for use in 2.4GHz WLL application using W-CDMA with 10MHz bandwidth.

Atheros AR7240

Abstract: Atheros AR9285 Atheros AR7240 datasheet Atheros AR9285 datasheet Atheros* ar7240 AR9331 AR724 ar93 atheros wlan AR9285 h004D
Contextual Info: Data Sheet PRELIMINARY December 2010 AR9331 Highly-Integrated and Cost Effective IEEE 802.11n 1x1 2.4 GHz SoC for AP and Router Platforms General Description Features The Atheros AR9331 is a highly integrated and cost effective IEEE 802.11n 1x1 2.4 GHz Systemon-a-Chip SoC for wireless local area network

circuit diagram of 2.4ghz rf transmitter and receiver

Abstract: circuit diagram of 2.4ghz rf transmitter saw filter modulator circuit diagram Bandpass filter SAW 2.4 GHz 50 Ohm circuit diagram vga transmitter and receiver wideband DAC modulator 2.5 GHz duplex filter GRF4100 application of band pass filter in wireless system spread spectrum D Amplifier
Contextual Info: CoreRF - GRF4100 CMOS 2.4GHz Spread Spectrum Transmitter GRF4100 CMOS 2.4GHz Spread Spectrum Transmitter specification standards for a 2.4 GHz W- CDMA wireless local loop system. General Descriptions The GRF4100 transmitter is designed for use in a 2.4GHz

CR10-101J-T

Abstract: colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner
Contextual Info: Application Note A VCO Design for WLAN Applications in the 2.4–2.5 GHz ISM Band APN1010 Introduction The increased demand for mobile network connections has lead to the establishment of RF interface standards for Wireless Local Area Networks WLANs . The

colpitts oscillator using 741

Abstract: meander-line antenna APN1010 VCO circuit diagram meander-line avx CR10-101J-T BV 726 C 1 Converter ku band HIGH POWER ANTENNA SWITCH PIN DIODE CR10-101J-T loop gain of Colpitts VCO design 4 ghz
Contextual Info: APPLICATION NOTE APN1010: A VCO Design for WLAN Applications in the 2.4–2.5 GHz ISM Band Introduction The increased demand for mobile network connections has led to the establishment of RF interface standards for Wireless Local Area Networks WLANs . The unlicensed ISM frequency band,

CXA3068N

Abstract: L-band Down Converter for Satellite Tuner
Contextual Info: CXA3068N L-band Down Converter for Satellite Tuner Description The CXA3068N is a monolithic IC to down-convert the L-band 930 to 2150 MHz signal for the satellite broadcasting receiver. It has a double-balanced mixer, local oscillator circuit and IF amplifier on chip.

L-band Down Converter for Satellite Tuner

Abstract: 2.2 GHz local oscillator cxa3068n 16PIN 1T379 2.2 GHz local oscillator ic
Contextual Info: CXA3068N L-band Down Converter for Satellite Tuner Description The CXA3068N is a monolithic IC to down-convert the L-band 930 to 2150 MHz signal for the satellite broadcasting receiver. It has a double-balanced mixer, local oscillator circuit and IF amplifier on chip.

CXA3068N

Contextual Info: SONY CXA3068N L-band Down Converter for Satellite Tuner Description The CXA3068N is a monolithic 1C to down-convert the L-band 930 to 2150 MHz signal tor the satellite broadcastin g receiver. It has a doub le -b alanced mixer, local oscillator circuit and IF amplifier on chip.

Contextual Info: SONY CXA3068N L-band Down Converter for Satellite Tuner D escription The CXA3068N is a monolithic 1C to down-convert the L-band 930 to 2150 MHz signal for the satellite broadcasting receiver. It has a double-balanced mixer, local oscillator circuit and IF amplifier on chip.

2.2 GHz local oscillator

Abstract: 2.2 GHz local oscillator ic 16PIN 470MHZ CXA3008N-1 CXA3008N-2 950-MHz
Contextual Info: SONY CXA3008N-1/-2 L-band Down Converter IC Description The CXA3008N-1A2 is a monolithic IC to downconvert the L-band 1 to 2 GHz signal for the satellite broadcasting receiver. It has a double­ balanced mixer, local oscillator circuit and IF amplifier on chip.

mtron

Contextual Info: Introduces M4001 and M4002 SERIES Surface Mount VCSO • Integrated phase jitter of .15 ps typical from 12 kHz to 20 MHz in operating frequencies up to 2.488 GHz • Ideal for clock smoothing applications for OC-48 and OC-192 • Well suited as an IF local oscillator, or mixer

VPS05605

Contextual Info: SIEGET
45 BFP 520 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1
Gold metallization for high reliability

IC 7481 pin configuration

Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

BFP520

Abstract: VPS05605
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

ev 2816

Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel
Contextual Info: SIEGET
45 BFP 520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1
Gold metallization for high reliability

VPS05605

Abstract: BF 212 transistor TS1440
Contextual Info: SIEGET
25 BFP 405 NPN Silicon RF Transistor 3
For low current applications 4
For oscillators up to 12 GHz
Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Infineon Technologies transistor 4 ghz

Contextual Info: SIEGET
25 BFP 405 NPN Silicon RF Transistor 3  For low current applications  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability

BFP405 ALs

Abstract: BFP405
Contextual Info: SIEGET
25 BFP405 NPN Silicon RF Transistor 3
For low current applications 4
For oscillators up to 12 GHz
Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

420 NPN Silicon RF Transistor

Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
Contextual Info: SIEGET
25 BFP 420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

BFP520 application notes

Abstract: SIEGET 45
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

Contextual Info: SIEGET
25 BFP 420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding Gms = 21 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2795GV GENERAL PURPOSE L-BAND DOWN CONVERTER DESCRIPTION The /¿PC 2795G V is Silicon monolithic 1C designed for L-band down converter. This 1C consists of double balanced mixer, local oscillator, local oscillation buffer amplifier, IF buffer amplifier, and voltage regulator.

BFP420 application notes

Abstract: BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams
Contextual Info: SIEGET
25 BFP420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability