2.4 GHZ 20 WATTS POWER AMPLIFIER SCHEMATIC Search Results

2.4 GHZ 20 WATTS POWER AMPLIFIER SCHEMATIC Result Highlights (5)

Part	Manufacturer	Description
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HSSOP31

2.4 GHZ 20 WATTS POWER AMPLIFIER SCHEMATIC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and	Original		PDF
ATP10K100M Abstract: 100w1000 Amplifier Research LA250 Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation	Original	250T1G3, 200T2G8A 250T8G18 January/3500 ATP10K100M 100w1000 Amplifier Research LA250	PDF
mallory 150 series Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	Inte153 MRF20030R mallory 150 series	PDF
451a0 Abstract: motorola rf power transistors mtbf Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.	Original	MRF20060R MRF20060RS 451a0 motorola rf power transistors mtbf	PDF
Motorola 946 Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030R/D MRF20030R Motorola 946 MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf	PDF
BD136 Abstract: MJD47 MRF20030R Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030R/D MRF20030R BD136 MJD47 MRF20030R	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier	Original	MRF20030R/D MRF20030R	PDF
bd136 equivalent Abstract: DIODE 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR BD136 MJD47 MRF20060R MRF20060RS MURS160T3 RF NPN POWER TRANSISTOR 3 GHZ 5w 150 j47 Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.	Original	MRF20060R/D MRF20060R MRF20060RS MRF20060R MRF20060RS bd136 equivalent DIODE 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR BD136 MJD47 MURS160T3 RF NPN POWER TRANSISTOR 3 GHZ 5w 150 j47	PDF
VARIABLE capacitor Abstract: No abstract text available Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices	Original	MRF20060R/D MRF20060R MRF20060RS VARIABLE capacitor	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts	Original	MRF20060R/D MRF20060R MRF20060RS MRF20060R	PDF
BD136 Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts	Original	MRF20060R/D MRF20060R MRF20060RS MRF20060R) MRF20060R BD136 MJD47 MRF20060RS MURS160T3 rohm mtbf	PDF
MRFG35010M Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	RDMRFG35010MT1BWA MRFG35010MT1 MRFG35010M	PDF
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030	PDF

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	Original	MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x	PDF
db14g Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35010MT1 MRFG35010MT1 RDMRFG35010MT1BWA db14g CDR33BX104AKWS T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	RDMRFG35003MT1BWA MRFG35003MT1	PDF
smd diode J476 Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3	PDF
D55342M07B Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07 Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet	Original	MRFG35010NT1 MRFG35010MT1 D55342M07B 100B102JP500X rick miller MRFG35010M LL-210 D55342M07	PDF
transistor marking z11 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet	Original	MRFG35005NT1 MRFG35005MT1 transistor marking z11	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA	PDF
zt158 Abstract: BD 149 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	IS22I MRF20030 zt158 BD 149 transistor	PDF
rohm mtbf Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861	PDF
bd135 equivalent Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006	PDF

2.4 GHZ 20 WATTS POWER AMPLIFIER SCHEMATIC Search Results

2.4 GHZ 20 WATTS POWER AMPLIFIER SCHEMATIC Result Highlights (5)

2.4 GHZ 20 WATTS POWER AMPLIFIER SCHEMATIC Datasheets Context Search

High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

ATP10K100M

mallory 150 series

451a0

Motorola 946

BD136

Untitled

bd136 equivalent

VARIABLE capacitor

Untitled

BD136

MRFG35010M

BD135

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

db14g

Untitled

smd diode J476

D55342M07B

transistor marking z11

Untitled

zt158

rohm mtbf

bd135 equivalent