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    2 AMP ZENER DIODE Search Results

    2 AMP ZENER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    2 AMP ZENER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BZY12

    Abstract: BZY120 bzy200
    Text: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes Current 1.5 W Voltage 10 to 200 V DO-204AL / DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction • Low leakage current


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    PDF BZY97C10GP. BZY97C200GP DO-204AL DO-41 2002/95/EC 2002/96/EC DO-41. bzy97cgp Mar-12 BZY12 BZY120 bzy200

    BZY82

    Abstract: Fagor GP BZY33 BZY120 BZY150 BZY56 BZY97C12 BZY97C22 bzy27 BZY22
    Text: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes Current 1.5 W Voltage 10 to 200 V DO-204AL / DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction • Low leakage current


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    PDF BZY97C10GP. BZY97C200GP DO-204AL DO-41 2002/95/EC 2002/96/EC DO-41. MIL-STD-750 J-STD-002 BZY82 Fagor GP BZY33 BZY120 BZY150 BZY56 BZY97C12 BZY97C22 bzy27 BZY22

    Untitled

    Abstract: No abstract text available
    Text: BZX85C6V2GP. BZX85C220GP 1.3 W Glass Passivated Zener Diodes Current 1.3 W Voltage 6.2 to 220 V DO-204AL / DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction


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    PDF BZX85C6V2GP. BZX85C220GP DO-204AL DO-41 2002/95/EC 2002/96/EC DO-41. MIL-STD-750butors bzx85cgp

    BZX85C-GP

    Abstract: BZX85-C200
    Text: BZX85C6V2GP. BZX85C220GP 1.3 W Glass Passivated Zener Diodes DO-204AL / DO-41 Current 1.3 W Voltage 6.2 to 220 V R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction


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    PDF BZX85C6V2GP. BZX85C220GP DO-204AL DO-41 2002/95/EC 2002/96/EC DO-41. MIL-STD-750 bzx85cgp BZX85C-GP BZX85-C200

    Untitled

    Abstract: No abstract text available
    Text: BZX85C6V2GP. BZX85C220GP 1.3 W Glass Passivated Zener Diodes Current 1.3 W Voltage 6.2 to 220 V DO-204AL / DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction


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    PDF BZX85C6V2GP. BZX85C220GP DO-204AL DO-41 2002/95/EC 2002/96/EC DO-41. bzx85cgp Mar-12

    6.7V Zener Diode

    Abstract: D1008 transistor DIP16F LB1660 LB1660N LB1661 LB1664N "Zener Diodes" sanyo
    Text: Ordering number : EN2551E LB1660N LB1661 LB1664N Monolithic Digital IC 2-Phase Unipolar Brushless Motor Drivers Overview The LB1660 series are 2-phase unipolar brushless motor ex. DC brushless fanmotor drivers. Features • Output current : 1.5A. • On-chip output protect zener diodes : 60V (LB1660N, 1664N).


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    PDF EN2551E LB1660N LB1661 LB1664N LB1660 LB1660N, 1664N) 6.7V Zener Diode D1008 transistor DIP16F LB1660N LB1661 LB1664N "Zener Diodes" sanyo

    ohmmeter diagram

    Abstract: T-046 LM136-2.5
    Text: LM136A-2.5/LM136-2.5QML Reference Diode General Description Features The LM136A-2.5/LM136-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic impedance. A third terminal on the


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    PDF LM136A-2 5/LM136-2 LM136-2 ohmmeter diagram T-046 LM136-2.5

    8418003XA

    Abstract: 1N4148 krad 5962R0050102VXA 254168 5962R0050101VXA H03H LM136AH-2 LM136H-2 5962R0050102 T046
    Text: LM136A-2.5/LM136-2.5QML Reference Diode General Description Features The LM136A-2.5/LM136-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic impedance. A third terminal on the


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    PDF LM136A-2 5/LM136-2 LM136-2 8418003XA 1N4148 krad 5962R0050102VXA 254168 5962R0050101VXA H03H LM136AH-2 LM136H-2 5962R0050102 T046

    LM136A-2.5QML

    Abstract: LM136-2.5
    Text: Reference Diode General Description Features The LM136A-2.5/LM136-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic impedance. A third terminal on the


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    PDF LM136A-2 5QML/LM136-2 LM136-2 5/LM136-2 LM136A-2.5QML LM136-2.5

    1N4148 krad

    Abstract: 5962R0050101VXA 5962R0050102VXA H03H LM136AH-2 bare die zener LM136A-2.5QML LM136-2.5
    Text: LM136A-2.5QML 2.5V Reference Diode General Description Features The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic impedance. A third terminal on the


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    PDF LM136A-2 1N4148 krad 5962R0050101VXA 5962R0050102VXA H03H LM136AH-2 bare die zener LM136A-2.5QML LM136-2.5

    home electronic projects schematic

    Abstract: LM136-2.5 MDS LM136-2.5
    Text: LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode General Description The LM136-2.5/LM236-2.5 and LM336-2.5 integrated circuits are precision 2.5V shunt regulator diodes. These monolithic IC voltage references operate as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic


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    PDF LM136-2 5/LM236-2 5/LM336-2 LM336-2 home electronic projects schematic LM136-2.5 MDS LM136-2.5

    AN-247

    Abstract: LM136-2.5
    Text: LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode General Description The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient 5.0V zener with 0.6Ω dynamic impedance. A third terminal


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    PDF LM136-5 0/LM236-5 0/LM336-5 AN-247 LM136-2.5

    BZX384-C2V7

    Abstract: No abstract text available
    Text: BZX384C Series Zener Diodes — — Silicon Planar Power Zener Diodes The Zener voltages are graded according to the internation E 24 standard. Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance. Pb / RoHS Free 0.15 max —


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    PDF BZX384C OD-323 OD-323 BZX384-C2V7

    Untitled

    Abstract: No abstract text available
    Text: BZX384C Series ZENER DIODES FEATURES : 1.80 1.60 1.10 0.80 0.15 max 1.35 1.15 * Silicon Planar Power Zener Diodes * The Zener voltages are graded according to the internation E 24 standard. * Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.


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    PDF BZX384C OD-323 OD-323 BZX384C51 BZX384C56 BZX384C62 BZX384C68 BZX384C75

    LM136-2.5

    Abstract: No abstract text available
    Text: LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode General Description The LM136-2.5/LM236-2.5 and LM336-2.5 integrated circuits are precision 2.5V shunt regulator diodes. These monolithic IC voltage references operate as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic


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    PDF LM136-2 5/LM236-2 5/LM336-2 LM336-2 LM136-2.5

    2 Amp zener diode

    Abstract: 10 Amp zener diode HER 107 diode TRANSZORB diode
    Text: A COMPARISON OF ZENER DIODES VS TRANSZORB TRANSIENT VOLTAGE SUPPRESSORS TransZorb Transient Voltage Suppressors TVS are silicon P-N ju nctio n devices w hich have been "designed, manufactured, specified, and tested” as transient voltage sup­ pressors. TransZorb TVSs are


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    PDF 400mW 2 Amp zener diode 10 Amp zener diode HER 107 diode TRANSZORB diode

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


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    PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    NTE2360

    Abstract: No abstract text available
    Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10


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    PDF T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360

    1c2980

    Abstract: 1C2971 1n4000 DIODE zk 900 194 1C3002 DZD910 1C2973 1C2977 1C2970
    Text: M O T O R O L A SC -CDIODES/OPTO} 3 4 DE I b3t.7aS5 □03011=1 l f 6367255 MOTOROLA SC D IO D E S /O P T O 3^C 38119 SILICON ZENER DIODE DICE (continued) - öS 1C2970 CHIP NO. — SERIES LINE SOURCE — DZD910 Device assembled from this chip type are similar to or


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    PDF DZD910 1C2970 1N2970 1N3015 1N3993 1N4000 1C3993 1C3994 1C3995 1C3996 1c2980 1C2971 1n4000 DIODE zk 900 194 1C3002 DZD910 1C2973 1C2977 1C2970

    1N3005A

    Abstract: No abstract text available
    Text: MOTOROLA SC -CDIODES/OPTO} 15E D | L3L7ESS □ □7ciaE3 1 | - T-JH7 1N2970A MOTOROLA im m • SEMICONDUCTOR l TECHNICAL DATA thru ■ 1N3015A 10 WATTS ZENER DIODES ZENER DIODES Diffused-junctlon zener diodes for both military and highreliability Industrial applications. Available with anode-to-case


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    PDF 1N2970A 1N3015A 1N2970 1N2970R. 1N3005A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC {DI0DES/0PT03- 1SE 0 | b3ti7ESS 0 07 T A 3 S MOTOROLA SEMICONDUCTOR TECHNICAL DATA 10 W ATTS ZENER DIODES ZENER DIODES Low-voltage, alloy-junction zener diodes in hermetically sealed package with cathode connected to case. Supplied with mount­


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    PDF DI0DES/0PT03- DO-203AA

    1N3998

    Abstract: ZENER 10WATT 1N3993 1N3995 1N3999 1N4000 motorola zener diodes 10watt zener diode 1N3994 1N3996
    Text: MOTOROLA SC {DI0DES/0PT03- 1EE ]> I b3ti7ESS 007TÖ3S MOTOROLA SEMICONDUCTOR TECHNICAL DATA 10 WATTS ZENER DIODES ZENER DIODES Low-voltage, alloy-junctlon zener diodes in hermetically sealed package with cathode connected to case. Supplied with mount* Ing hardware.


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    PDF 1N3995 1N3996 1N3997 1N3998 1N3999 1N4000 D0-203AA ZENER 10WATT 1N3993 motorola zener diodes 10watt zener diode 1N3994

    5Z27 DIODE

    Abstract: zener diode T 5z27
    Text: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 5Z27/30 POWER SURGE SUPPRESSOR Unit in m m d e s i g n e d for u s e as a r e v e r s e p o w e r t r a n s i e n t s u p p r e s s o r to p r o t e c t a u t o m o t i v e e l e c t r i c a l e q u i p m e n t s


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    PDF 5Z27/30 5Z27 DIODE zener diode T 5z27

    ZY91M

    Abstract: smd zener pj ZY15M DO-213AB ZY10M ZY11M ZY12M ZY13M ZY16M ZY200M
    Text: MELF-SMD 2.5 Watt Use Advantages Zener Diodes ZY5,1M thru ZY200M European Pro-Electron type specifications, in glass and produced in the US. Able to function in hostile environments i.e. ABS brakes and under the hood. Used where cost, surge and high performance are important.


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    PDF ZY200M ZY62M ZY68M ZY75M ZY82M ZY91M ZY100M ZY110M ZY120M ZY130M smd zener pj ZY15M DO-213AB ZY10M ZY11M ZY12M ZY13M ZY16M ZY200M