Untitled
Abstract: No abstract text available
Text: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.
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TBB1017
REJ03G1469-0100
PTSP0006JA-A
TBB1017
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1012
R07DS0317EJ0300
REJ03G1245-0200)
PTSP0006JA-A
TBB1012
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1607B
Abstract: SMD MARKING CODE hitachi ADE-208-1607B TBB1010 1SV70
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
D-85619
1607B
SMD MARKING CODE hitachi
ADE-208-1607B
TBB1010
1SV70
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1SV70
Abstract: BIC703M
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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1SV70
Abstract: BIC702C
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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1SV70
Abstract: BB305C
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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1SV70
Abstract: TBB1002
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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diode MARKING CODE 917
Abstract: 1SV70 BIC703C DSA003645
Text: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC703C
ADE-208-985D
200pF,
OT-343mod)
BIC703C
diode MARKING CODE 917
1SV70
DSA003645
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diode MARKING CODE 917
Abstract: marking code g1s 1SV70 BB504C DSA003645
Text: BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D Z 5th. Edition Dec. 2000 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz
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BB504C
ADE-208-983D
OT-343mod)
BB504C
diode MARKING CODE 917
marking code g1s
1SV70
DSA003645
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marking L4F
Abstract: Hitachi DSA001652
Text: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A Z 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)
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3SK322
ADE-208-712A
OT-143
marking L4F
Hitachi DSA001652
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Hitachi DSA002743
Abstract: No abstract text available
Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;
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BB304C
ADE-208-606C
200pF,
OT-343mod)
BB304C
Hitachi DSA002743
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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1SV70
Abstract: TBB1004 TBB1004DMTL-E
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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BIC702M
Abstract: 1SV70 MARKING CODE l3 monolithic amplifier
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
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BB504M
R07DS0286EJ0800
REJ03G0837-0700)
OT-143Rmod)
PLSP0004ZA-A
BB504M
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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Original
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TBB1012
R07DS0317EJ0300
REJ03G1245-0200)
PTSP0006JA-A
TBB1012
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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Original
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
TBB1005
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PDF
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marking DX Sot-143
Abstract: 1SV70 BB404M diode 624 Hitachi DSA00310
Text: BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717A Z 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;
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BB404M
ADE-208-717A
200pF,
OT-143
BB404M
marking DX Sot-143
1SV70
diode 624
Hitachi DSA00310
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1SV70
Abstract: BB305M DSA003793
Text: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607C Z 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)
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BB305M
ADE-208-607C
200pF,
OT-143mod)
BB305M
1SV70
DSA003793
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PDF
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smd code marking NEC rf transistor
Abstract: 1SV70 TBB1005 TBB1005EMTL-E
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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Original
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TBB1004
R07DS0314EJ1200
REJ03G0842-1100)
200pF,
PTSP0006JA-A
TBB1004
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PDF
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