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    1SV306 Price and Stock

    Toshiba America Electronic Components 1SV306

    UHF BAND, 15 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
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    Quest Components 1SV306 21,576
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    1SV306 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV306 Toshiba Variable Capacitance Diode, VCO for UHF Band Radio Original PDF
    1SV306 Toshiba DIODE VAR CAP DUAL 15V 14PF 4(1-2U1A) Scan PDF
    1SV306 Toshiba Silicon epitaxial planar type variable capacitance diode VCO for UHF band radio Scan PDF
    1SV306 Toshiba Variable Capacitance Diode Silicon Epitaxial Planer Type Scan PDF
    1SV306 Toshiba VCO FOR VHF BAND BADIO Scan PDF
    1SV306(TE85L) Toshiba DIODE VAR CAP DUAL 15V 14PF 4(1-2U1A) T/R Scan PDF

    1SV306 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1SV306

    Abstract: No abstract text available
    Text: 1SV306 Preliminary TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package • Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		1SV306 1SV306 PDF

    X10027-3

    Abstract: 1SV306
    Text: 1SV306 TOSHIBA TENTATIVE 1 SV3 0 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm 2.1 ± 0.1 • • Small Package Ultra Low Series Resistance : rs = 0.200 Typ. MAXIMUM RATINGS (Ta = 25°C) SYMBOL VR Tj


    OCR Scan     		1SV306 C2V/C10V 470hange 470MHz X10027-3 1SV306 PDF

    1SV306C-WT

    Abstract: No abstract text available
    Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES • High capacitance ratio n = 11 min PINNING DESCRIPTION • Low series resistance and good C-V linearity PIN • Ultra small Flat Package (UFP) is suitable for 1 Cathode 2 Anode surface mount design


    Original     		1SV306C-WT OD-523 OD-523 1SV306C-WT PDF

    marking code TI

    Abstract: No abstract text available
    Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES Low series resistance and good C-V linearity. PINNING High capacitance ratio n=11.0min . DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25OC)


    Original     		1SV306AWT OD-523 OD-523 marking code TI PDF

    1SV306

    Abstract: No abstract text available
    Text: 1SV306 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 306 Unit in mm VCO FOR UHF BAND RADIO 2.1 ± 0.1 • • Small Package Ultra Low Series Resistance : rs = 0.20 ü, Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV306 C2V/C10V 1SV306 PDF

    marking code TC

    Abstract: wt marking WT Series diode Marking code WT 1SV306C-WT
    Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES High capacitance ratio n=11.0min Low series resistance and good C-V linearity. Ultra small Flat Package (UFP) is suitable for PINNING DESCRIPTION PIN surface mount design. 1 Cathode 2 Anode 2 1 TC


    Original     		1SV306C-WT OD-523 22/Subsidiary OD-523 marking code TC wt marking WT Series diode Marking code WT 1SV306C-WT PDF

    "MARKING CODE TI"

    Abstract: marking code TI
    Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES PINNING • Low series resistance and good C-V linearity DESCRIPTION PIN • High capacitance ratio n = 11 min 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol


    Original     		1SV306AWT OD-523 OD-523 "MARKING CODE TI" marking code TI PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV306 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE 1 SVB06 Unit in mm 2.1 ± 0.1 • • j 1 -25± O.lj Small Package Ultra Low Series Resistance : rs = 0.20H Typ. EE2 -EB- CHARACTERISTIC Reverse Voltage


    OCR Scan     		1SV306 SVB06 PDF

    marking code TC

    Abstract: diode Marking code WT WT Series
    Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES High capacitance ratio n=11.0min Low series resistance and good C-V linearity. Ultra small Flat Package (UFP) is suitable for PINNING DESCRIPTION PIN surface mount design. 1 Cathode 2 Anode 2 1 TC


    Original     		1SV306C-WT OD-523 OD-523 marking code TC diode Marking code WT WT Series PDF

    1SV306

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 306 VCO FOR UHF BAND RADIO • • Small Package Ultra Low Series Resistance : rs = 0.20 ü, Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


    OCR Scan     		1SV306 1SV306 PDF

    1SV306

    Abstract: No abstract text available
    Text: 1SV306 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package • Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage


    Original     		1SV306 1SV306 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES • High capacitance ratio n = 11 min PINNING DESCRIPTION • Low series resistance and good C-V linearity PIN • Ultra small Flat Package (UFP) is suitable for 1 Cathode 2 Anode surface mount design


    Original     		1SV306C-WT OD-523 OD-523 PDF

    marking code TI

    Abstract: No abstract text available
    Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES PINNING • Low series resistance and good C-V linearity DESCRIPTION PIN • High capacitance ratio n = 11 min 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol


    Original     		1SV306AWT OD-523 OD-523 marking code TI PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 306 Unit in mm VCO FOR UHF BAND RADIO • • 2.1 ± 0.1 j 1 -25± O.lj Small Package Ultra Low Series Resistance : rs = 0.20H Typ. EE2 4 in 3 o -Efl- +I +i oo


    OCR Scan     		1SV306 PDF

    1SV306

    Abstract: No abstract text available
    Text: 1SV306 Preliminary TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package · Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		1SV306 1SV306 PDF

    1SV306

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV306 Unit in mm VCO FOR UHF BAND RADIO 2.1 ± 0.1 • Small Package • Ultra Low Series Resistance : rs = 0.200 Typ. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		1SV306 C2V/C10V 470MHz 470MHz PDF

    marking code TI

    Abstract: "MARKING CODE TI"
    Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES Low series resistance and good C-V linearity. PINNING High capacitance ratio n=11.0min . DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25OC)


    Original     		1SV306AWT OD-523 OD-523 marking code TI "MARKING CODE TI" PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV306 Preliminary TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package · Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		1SV306 PDF

    822 a b

    Abstract: 1SV306 china mobile phone circuit diagram C506 C507 C822 CNXT022 RF25A RF25A-12
    Text: RF25A RF25A for CDMA, and AMPS Applications The RF25A device includes the following functional blocks: Features • • • • • • • • • • • • NC LNA_OUT NC MIXEMIT IF_TRAP MIX_IN VCC_MIX NC LO_IN 40 39 38 37 36 35 34 33 32 6 26 MIX_BYPASS


    Original     		RF25A RF25A 822 a b 1SV306 china mobile phone circuit diagram C506 C507 C822 CNXT022 RF25A-12 PDF

    schematic diagram vga

    Abstract: C268 C823 RF25B conexant 485
    Text: RF25B Tx ASIC for CDMA and AMPS Applications The RF25B device includes the following functional blocks: Features • • • • • • Dual-mode operation with high linearity that meets the requirements of the IS-95A and IS-98 standards • 90 dB dynamic range from the VGA


    Original     		RF25B RF25B IS-95A IS-98 40-pin schematic diagram vga C268 C823 conexant 485 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 PDF

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 PDF