1SV214 TOSHIBA Search Results

1SV214

Contextual Info: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. ·

1SV214

Contextual Info: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV214

Contextual Info: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. ·

1SV214

Abstract: 1SV214 toshiba C25V
Contextual Info: 1SV214 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING. SILICON EPITAXIAL PLANAR TYPE 1SV 214 • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

1SV214

Abstract: C25V gc. marking
Contextual Info: 1SV214 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 1 4 Unit in mm TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

1SV214 spice

Contextual Info: TOSHIBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 14 TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: 1SV214 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE TV TUNING. Unit in mm • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0 .4 0 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: 1SV214 TO SHIBA 1 SV2 1 4 TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING. . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 6.5 Typ. Low Series Resistance : rs = 0.4(1 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

1SV214

Abstract: C25V
Contextual Info: 1SV214 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 14 TV TUNING • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

diode MARKING ED

Abstract: GENERAL SEMICONDUCTOR MARKING ed
Contextual Info: TOSHIBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 1 4 Unit in mm TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.4(1 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

1SV214 spice

Contextual Info: TO SH IBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 14 TV TUNING. • Unit in mm High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance • +0.2 1.2 5 - 0. : rs = 0.40 (Typ.) II Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: 1SV214 SILICON EPITAXIAL PLANAR TYPE TV TUNING. Unit in mm . High Capacitance Ratio : €2V/C25V=6.5 Typ. . Low Series Resistance : rs=0. 4il(Typ.) . Excellent C-V Characteristics, and Small Tracking Error. . Useful for Small Size Tuner. 0 ± 0-0 5 I +0.1

1sv214

Abstract: 1SV214 spice
Contextual Info: 20010110 1SV214 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 2V ～ 25 V Ta = 27℃

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

FC54M

Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
Contextual Info: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

siemens diodes

Abstract: di_hit_hsr276_19930908 BB219 HSMS-286x hitachi part naming Motorola diodes hitachi naming convention 1SV186 BAT150 HSMS2815
Contextual Info: Vendor Component Libraries High-Frequency Diode Library December 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

motorola diodes

Abstract: BB219 di_hit_hsr276_19930908 HSMS2825 HSMS8101 BB515 hsms282n HSMS-285C HSMS2815 HSMS2820
Contextual Info: Vendor Component Libraries High-Frequency Diode Library September 2004 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness