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    1SV214 TOSHIBA Search Results

    1SV214 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    1SV214 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SV214

    Abstract: No abstract text available
    Text: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. ·


    Original     		PDF 1SV214 1SV214

    1SV214

    Abstract: No abstract text available
    Text: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV214 1SV214

    Untitled

    Abstract: No abstract text available
    Text: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV214

    1SV214

    Abstract: No abstract text available
    Text: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV214 1SV214

    Untitled

    Abstract: No abstract text available
    Text: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. ·


    Original     		PDF 1SV214

    1sv214

    Abstract: 1SV214 spice
    Text: 20010110 1SV214 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 2V ～ 25 V Ta = 27℃


    Original     		PDF 1SV214 513E-16 00E-04 552E-11 00E-09 1SV214 spice

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    diode cross reference 1s1555

    Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
    Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,


    Original     		PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


    Original     		PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    siemens diodes

    Abstract: di_hit_hsr276_19930908 BB219 HSMS-286x hitachi part naming Motorola diodes hitachi naming convention 1SV186 BAT150 HSMS2815
    Text: Vendor Component Libraries High-Frequency Diode Library December 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF o19930908 1sv186 1sv186: 1sv214 1sv214: OD323, 1sv215 1sv215: siemens diodes di_hit_hsr276_19930908 BB219 HSMS-286x hitachi part naming Motorola diodes hitachi naming convention BAT150 HSMS2815

    motorola diodes

    Abstract: BB219 di_hit_hsr276_19930908 HSMS2825 HSMS8101 BB515 hsms282n HSMS-285C HSMS2815 HSMS2820
    Text: Vendor Component Libraries High-Frequency Diode Library September 2004 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF 1sv186 1sv186: 1sv214 1sv214: OD323, 1sv215 1sv215: motorola diodes BB219 di_hit_hsr276_19930908 HSMS2825 HSMS8101 BB515 hsms282n HSMS-285C HSMS2815 HSMS2820

    1SV214

    Abstract: C25V gc. marking
    Text: 1SV214 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 1 4 Unit in mm TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214 C2V/C25V 470MHz C25V gc. marking

    1SV214 spice

    Abstract: No abstract text available
    Text: TOSHIBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 14 TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214 C2V/C25V 1SV214 spice

    Untitled

    Abstract: No abstract text available
    Text: 1SV214 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE TV TUNING. Unit in mm • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0 .4 0 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214

    Untitled

    Abstract: No abstract text available
    Text: 1SV214 TO SHIBA 1 SV2 1 4 TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING. . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 6.5 Typ. Low Series Resistance : rs = 0.4(1 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214 C2V/C25V ij------X100

    1SV214

    Abstract: C25V
    Text: 1SV214 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 14 TV TUNING • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214 C2V/C25V 470MHz 1SV214 C25V

    diode MARKING ED

    Abstract: GENERAL SEMICONDUCTOR MARKING ed
    Text: TOSHIBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 1 4 Unit in mm TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.4(1 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214 diode MARKING ED GENERAL SEMICONDUCTOR MARKING ed

    1SV214 spice

    Abstract: No abstract text available
    Text: TO SH IBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 14 TV TUNING. • Unit in mm High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance • +0.2 1.2 5 - 0. : rs = 0.40 (Typ.) II Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214 1SV214 spice

    Untitled

    Abstract: No abstract text available
    Text: 1SV214 SILICON EPITAXIAL PLANAR TYPE TV TUNING. Unit in mm . High Capacitance Ratio : €2V/C25V=6.5 Typ. . Low Series Resistance : rs=0. 4il(Typ.) . Excellent C-V Characteristics, and Small Tracking Error. . Useful for Small Size Tuner. 0 ± 0-0 5 I +0.1


    OCR Scan     		PDF 1SV214 V/C25V C2V/C25V 470MHz

    Untitled

    Abstract: No abstract text available
    Text: 1SV214 SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE TV TUNING. • • • • U n i t in m m High Capacitance Ratio : C2V / C25V = 6.5 Typ. Low Series Resistance : rs = 0.4fi (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.


    OCR Scan     		PDF 1SV214 C2V/C25V 470MHz

    FC54M

    Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
    Text: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460


    OCR Scan     		PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"