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    1SS420 Search Results

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    1SS420 Price and Stock

    Samtec Inc MTMM-102-11-S-S-420

    Conn Unshrouded Header HDR 2 POS 2mm Solder ST Thru-Hole - Bulk (Alt: MTMM-102-11-S-S-42)
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    Avnet Americas MTMM-102-11-S-S-420 Bulk 1
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    Master Electronics MTMM-102-11-S-S-420
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    Sager MTMM-102-11-S-S-420
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    Toshiba America Electronic Components 1SS420(TPL3,F)

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    Quest Components 1SS420(TPL3,F) 11,997
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    1SS420 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS420 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS420CT Toshiba 1SS420 - DIODE 0.2 A, 35 V, SILICON, SIGNAL DIODE, CST2, 1-1P1A, 2 PIN, Signal Diode Original PDF
    1SS420TH3FT Toshiba 1SS420TH3FT - Diode Small Signal Schottky 35V 0.2A 2-Pin ESC Original PDF

    1SS420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 1SS420PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-79/SOD-523 FEATURE * Small surface mounting type. SC-79/SOD-523 * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.


    Original     		PDF 1SS420PT SC-79/SOD-523 SC-79/SOD-523) 300mW. 500mA. 1/10IR

    1SS420

    Abstract: No abstract text available
    Text: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30


    Original     		PDF 1SS420 1SS420

    Untitled

    Abstract: No abstract text available
    Text: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30


    Original     		PDF 1SS420

    Untitled

    Abstract: No abstract text available
    Text: 1SS420CT 東芝ダイオード エピタキシャルショットキバリア形 1SS420CT ○ 高速スイッチング用 : IR = 5 A 最大 せ ん 目 頭 逆 逆 記 電 電 号 定 格 単位 圧 VRM 35 V 圧 VR 30 V せ ん 頭 順 電 流 IFM 300 mA


    Original     		PDF 1SS420CT

    1ss420

    Abstract: No abstract text available
    Text: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE High Speed Switching Application Features • Low reverse current: IR=5µA max. Absolute Maximum Ratings (Tj = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V


    Original     		PDF 1SS420 20x20mm, OD-523 1ss420

    Untitled

    Abstract: No abstract text available
    Text: 1SS420CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Unit: mm Characteristics Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA


    Original     		PDF 1SS420CT

    General Semiconductor diode marking s6

    Abstract: 1ss420
    Text: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 µA max Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current


    Original     		PDF 1SS420 General Semiconductor diode marking s6 1ss420

    1ss420

    Abstract: No abstract text available
    Text: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE For high speed switching application Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V Peak Forward Current IFM 300 mA Average Forward Current


    Original     		PDF 1SS420 OD-523 1ss420

    1ss420

    Abstract: No abstract text available
    Text: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE High Speed Switching Application Features • Low reverse current: IR=5µA max. Absolute Maximum Ratings (Tj = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V


    Original     		PDF 1SS420 20x20mm, OD-523 1ss420

    Untitled

    Abstract: No abstract text available
    Text: 1SS420CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Unit: mm Characteristics Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA


    Original     		PDF 1SS420CT

    1SS420GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 1SS420GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-79/SOD-523 FEATURE * Small surface mounting type. SC-79/SOD-523 * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.


    Original     		PDF 1SS420GP SC-79/SOD-523 SC-79/SOD-523) 300mW. 500mA. 1/10IR 1SS420GP

    General Semiconductor diode marking s6

    Abstract: s6 general semiconductor GENERAL SEMICONDUCTOR MARKING s6
    Text: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30


    Original     		PDF 1SS420 General Semiconductor diode marking s6 s6 general semiconductor GENERAL SEMICONDUCTOR MARKING s6

    1SS420

    Abstract: No abstract text available
    Text: 1SS420 東芝ダイオード エピタキシャルショットキバリア形 1SS420 ○ 高速スイッチング用 : IR = 5 A 最大 逆電流が小さい。 絶対最大定格 (Ta = 25°C) 項 せ ん 目 頭 逆 逆 記 電 電 号 定 格 単位 圧


    Original     		PDF 1SS420 1SS420

    1ss420

    Abstract: marking code R
    Text: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 R Top View Marking Code: "R" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original     		PDF 1SS420 OD-523 OD-523 1ss420 marking code R

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    TA48033AF

    Abstract: ta4805af TA4805AS 1SS389 1SS420 SSOP16 1500-nm TSSOP-838 TC93A04 TC93A05FNG
    Text: C O N T E N T S 東芝半導体情報誌アイ 2004年11月号 11 今月の新製品情報 VOLUME 148 光ディスク用レーザードライバ .2 1Aロードロップアウトレギュレータ.2 低リーク電流低順方向電圧


    Original     		PDF 03-3457-3405FAX. TC93A04FNG/05FNG TC93A04FNG SSOP16-225-0 TA48033AF ta4805af TA4805AS 1SS389 1SS420 SSOP16 1500-nm TSSOP-838 TC93A04 TC93A05FNG

    DF2S3.6SC

    Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
    Text: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 （トランジスタ、 ダイオード、 セルパック） ■資料番号： BCJ0052E


    Original     		PDF BCJ0052E RN1310 RN2310 RN1303 RN2303 RN1302 RN2302 RN1304 RN2307 DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    wa sot23

    Abstract: BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR


    Original     		PDF 1SS400GPT BD4148FPT MMBD4448FPT 1SS387PT 1SS420PT 1SS400PT 1SS380PT MMBD4448HPT 1SS355PT 1SS358PT wa sot23 BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B