1SS361F Search Results

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Unit in mm z Small package : 1608 Flat lead z Excellent in forward current and forward voltage characteristics : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 0.4 Absolute Maximum Ratings (Ta = 25°C) 1 0.4

1SS361FV

Contextual Info: 1SS361FV 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS361FV ○ 超高速スイッチング用 単位: mm 項目 せ ん 頭 せ ん 平 均 許 ジ 単位 VRM 85 V 電 圧 圧 VR 80 V 頭 順 電 流 IFM 300* mA 整 流 電 流

Contextual Info: 1SS361F TOSHIBA T O S H IB A D IO D E 1 SILICO N E P ITA X IA L P LA N A R TYPE S S 3 6 1 F Unit in mm ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N S 1.6 ± 0.1 Small Package : 1608 Fiat Lead Excellent in Forward Current and Forward Voltage Characteristics

1SS361FV

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Excellent in forward current and forward voltage characteristics : VF 3 = 0.9 V (typ.) 0.4 Lead (Pb) - free 0.8±0.05 1 0.4 : CT = 0.9 pF (typ.)

Contextual Info: TOSHIBA 1SS361F T O S H IB A D IO D E • SILICO N E P ITA X IA L P LA N A R TYPE «r Mr M r ■ ■ Unit in mm ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N S 1.6 ± 0.1 Small Package Excellent in Forward Current Characteristics Fast Reverse Recovery Time

1SS361F

Contextual Info: 1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Unit in mm Small package : 1608 Flat lead Excellent in forward current and forward voltage characteristics : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.)

1SS361F

Contextual Info: 1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time : trr = 1.6 ns typ. Maximum (peak) reverse voltage Symbol Rating Unit VRM 85 V Reverse voltage

1SS361FV

Abstract: TOSHIBA MS
Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications Unit: mm 0.22±0.05 z Excellent in forward current and forward voltage characteristics : VF 3 = 0.9 V (typ.) 1.2±0.05 0.32±0.05 z Small package 0.8±0.05

1SS361F

Abstract: Toshiba Semiconductor
Contextual Info: 1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Unit in mm z Small package : 1608 Flat lead z Excellent in forward current and forward voltage characteristics : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power