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    1SS357 Search Results

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    1SS357 Price and Stock

    HY Electronic Corp 1SS357

    Surface Mount Schottky Barrier D
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    DigiKey 1SS357 Reel 20
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    Micro Commercial Components 1SS357-TP

    Interface
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    DigiKey 1SS357-TP Bulk 3,000
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    Mouser Electronics 1SS357-TP
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    Toshiba America Electronic Components 1SS357(TPH3F)

    Diode Small Signal Schottky 45V 0.1A 2-Pin USC T/R - Tape and Reel (Alt: 1SS357(TPH3,F))
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    Avnet Americas 1SS357(TPH3F) Reel 3,000
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    Toshiba America Electronic Components 1SS357(TPH3,F)

    Diode Small Signal Schottky Si 45V 0.1A 2-Pin USC T/R
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    Verical 1SS357(TPH3,F) 10,163 463
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    1SS357(TPH3,F) 2,875 606
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    Quest Components 1SS357(TPH3,F) 10,466
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    1SS357(TPH3,F) 10,466
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    1SS357(TPH3,F) 1,792
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    1SS357(TPH3,F) 1,792
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    Chip1Stop 1SS357(TPH3,F) Cut Tape 2,875
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    EBV Elektronik 1SS357(TPH3,F) 15 Weeks 3,000
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    Toshiba America Electronic Components 1SS357

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    Bristol Electronics 1SS357 2,992
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    Win Source Electronics 1SS357 209,000
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    1SS357 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS357 Galaxy Semi-Conductor Holdings Surface mounting schottky Diode Original PDF
    1SS357 Kexin Low Voltage High Speed Switching Original PDF
    1SS357 Toshiba Japanese - Diodes Original PDF
    1SS357 Toshiba shottky barrier diode Original PDF
    1SS357 Toshiba Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Features: standard; Internal connection: single; V R (V): (max 40) Original PDF
    1SS357 Transys Electronics Schottky Diodes Original PDF
    1SS357 TY Semiconductor Low Voltage High Speed Switching - SOD-323 Original PDF
    1SS357 Weitron Surface Mount Schottky Barrier Diode Original PDF
    1SS357 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS357 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS357 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS357-TP Micro Commercial Interface Original PDF
    1SS357TPH2 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS357TPH3 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS357(TPH3,F) Toshiba 1SS357 - Diode Small Signal Schottky 45V 0.1A 2-Pin USC T/R Original PDF
    1SS357TPH4 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS357TPHR2 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS357TPHR3 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS357TPHR4 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS357 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS357

    Abstract: No abstract text available
    Text: 1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.004 grams .071 1.80 .063(1.60) .006(.15)


    Original
    PDF 1SS357 OD-323 MIL-STD-202E 1SS357

    Untitled

    Abstract: No abstract text available
    Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic


    Original
    PDF 1SS357 SC-70

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


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    PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • Halogen free available upon request by adding suffix "-HF" • High speed switching diode


    Original
    PDF 1SS357 OD-323 OD-323, MIL-STD-202,

    s31 schottky diode

    Abstract: 1SS357 diode ct-25
    Text: 1SS357 Schottky Diodes FEATURES z z Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current


    Original
    PDF 1SS357 100mA s31 schottky diode diode ct-25

    RB751V-40

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-323 Product Group Type No. SD101AWS SD101CWS RB751V-40 BAS70WS 1SS357 RB501V-40 MMDL101 MMBD717WS BAT42WS / BAT43WS BAT54HS / BAT54WS MMDL301 BAS40WS MMDL770 1SS404


    Original
    PDF OD-323 SD101AWS SD101CWS RB751V-40 BAS70WS 1SS357 RB501V-40 MMDL101 MMBD717WS BAT42WS RB751V-40

    Untitled

    Abstract: No abstract text available
    Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic


    Original
    PDF 1SS357 SC-70

    schottky 1ss357

    Abstract: 1SS357
    Text: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS Mechanical Data:


    Original
    PDF 1SS357 OD-323 MIL-STD-202 OD-323 13-Sep-05 12-Sep-05 schottky 1ss357 1SS357

    Untitled

    Abstract: No abstract text available
    Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 1SS357 SC-70

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • • • •  x High speed switching diode 45 Volt Switching Diode Surface mount


    Original
    PDF 1SS357 OD-323 OD-323, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • • • •  x High speed switching diode 45 Volt Switching Diode Surface mount


    Original
    PDF 1SS357 OD-323 OD-323, MIL-STD-202,

    1SS357

    Abstract: schottky 1ss357
    Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 1SS357 SC-70 1SS357 schottky 1ss357

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 + FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol


    Original
    PDF OD-323 1SS357 OD-323 100mA ISS357

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS357 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low forward voltage :VF 3 = 0.54 V(Typ) Low resistance current :IR = 5 +0.1 2.6-0.1 :SC-70 0.475 0.375 +0.05 0.1-0.02 Small package: 1.0max A (Max)


    Original
    PDF 1SS357 OD-323 SC-70

    1SS357

    Abstract: 1-1e1a
    Text: 1SS357 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS357 ○ 超高速度スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順電圧特性が良い。 : VF 3 = 0.54V (標準)


    Original
    PDF 1SS357 100mA 1SS357 1-1e1a

    s31 schottky diode

    Abstract: SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 MARKING TA SOD323 DIODE DIODE SCHOTTKY SOD-323 schottky 1ss357
    Text: BL Galaxy Electrical Production specification Surface mounting schottky Diode 1SS357 FEATURES z Pb Small Surface Mounting Type: Lead-free SOD-323 z Low VF。 z Low IR APPLICATIONS z Surface mount schottky diode SOD-323 ORDERING INFORMATION Type No. Marking


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    PDF 1SS357 OD-323 BL/SSSKB004 s31 schottky diode SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 MARKING TA SOD323 DIODE DIODE SCHOTTKY SOD-323 schottky 1ss357

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • Halogen free available upon request by adding suffix "-HF" • High speed switching diode


    Original
    PDF 1SS357 OD-323 OD-323, MIL-STD-202,

    free download IR circuit diagram

    Abstract: s31 schottky diode schottky 1ss357 1SS357
    Text: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS 1 Mechanical Data:


    Original
    PDF 1SS357 OD-323 MIL-STD-202 OD-323 13-Sep-05 12-Sep-05 free download IR circuit diagram s31 schottky diode schottky 1ss357 1SS357

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • • • •  x High speed switching diode 45 Volt Switching Diode Surface mount


    Original
    PDF 1SS357 OD-323 OD-323, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS357 LO W VOLTAGE HIGH SPEED SWITCHING. Unit in mm Low Forward Voltage VF 3 = 0.54 (Typ.) Low Resistance Current I r = £>/“A (Max.) Small Package SC-70 il ¥ I 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS357 SS357 SC-70

    1SS357

    Abstract: No abstract text available
    Text: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS357 LO W VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage VF 3 = 0.54 (Typ.) • Low Resistance C urrent IR — • Small Package SC-70 (Max.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS357 SC-70 1SS357

    1SS357

    Abstract: No abstract text available
    Text: 1SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING, Low Forward Voltage Low Resistance C urrent Sm all Package V f 3 = 0.54 (Typ.) I r = 5^A (Max.) SC-70 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC M aximum (Peak) Reverse Voltage


    OCR Scan
    PDF 1SS357 SC-70 100mA 1SS357

    Untitled

    Abstract: No abstract text available
    Text: 1SS357 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • Low Forward Voltage Low Resistance Current Small Package VF 3 =0.54 (Typ.) I r = 5,uA (Max.) SC-70 MAXIMUM RATINGS (Ta = 25°C) SYMBOL


    OCR Scan
    PDF 1SS357 SC-70 20X20mm,

    SS357

    Abstract: diode marking NZ
    Text: TOSHIBA 1SS357 TOSHIBA DIODE 1 SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Low Resistance Current Small Package VF 3 = 0.54 (Typ.) Ir = £>/“A (Max.) SC-70 il 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS357 SS357 SC-70 SS357 diode marking NZ