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    1SS133 DIODE Search Results

    1SS133 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1SS133 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS133 T-77

    Abstract: No abstract text available
    Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction


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    PDF 1SS133 DO-34 1SS133 T-77

    1SS133

    Abstract: No abstract text available
    Text: 1SS133 Diodes High-speed switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND !Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1.2ns Typ.) φ0.4±0.1 22Min. φ1.8±0.2 22Min.


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    PDF 1SS133 22Min. DO-34 1SS133 Colo80 1/10IR

    1SS133 T77

    Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
    Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction


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    PDF 1SS133 DO-34 1SS133 T77 diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm

    1SS133

    Abstract: do-34 rohm
    Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction


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    PDF 1SS133 DO-34 1SS133 do-34 rohm

    1SS133

    Abstract: 29010
    Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3


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    PDF 1SS133 DO-34 1/10IR 1SS133 29010

    1SS133

    Abstract: diode 1ss133
    Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3


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    PDF 1SS133 DO-34 1SS133 diode 1ss133

    1SS133

    Abstract: No abstract text available
    Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3


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    PDF 1SS133 DO-34 1SS133

    1SS133

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 90 V CURRENT: 0.2 A FEATURES DO - 34 GLASS Glass sealed envelope. (MSD) VRM=250V guaranteed High reliability MECHANICAL DATA Case: DO-34, glass case Polarity: Color band denotes cathode


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    PDF 1SS133 DO-34, 1/10IR 1SS133

    1SS133

    Abstract: No abstract text available
    Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol


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    PDF 1SS133 1-Sep-2009 DO-34 1SS133

    DIODE 1SS133

    Abstract: 1SS133 1ss133 diode diode
    Text: Diodes High–speed switching diode 1SS133 FApplications High speed switching FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (typical recovery time = 1.5ns) FConstruction Silicon epitaxial planar


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    PDF 1SS133 DIODE 1SS133 1SS133 1ss133 diode diode

    Untitled

    Abstract: No abstract text available
    Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol


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    PDF 1SS133 1-Jan-2006

    1SS133

    Abstract: No abstract text available
    Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol


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    PDF 1SS133 Fax0755-8324 1SS133

    1SS133

    Abstract: No abstract text available
    Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol


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    PDF 1SS133 1-Nov-2006 DO-34 1SS133

    1SS133

    Abstract: SEMTECH 1SS133
    Text: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage


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    PDF 1SS133 100mA 1SS133 SEMTECH 1SS133

    1SS133

    Abstract: 1ss133 diode
    Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol


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    PDF 1SS133 1SS133 1ss133 diode

    SEMTECH 1SS133

    Abstract: 1SS133
    Text: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage


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    PDF 1SS133 100mA SEMTECH 1SS133 1SS133

    SEMTECH 1SS133

    Abstract: 1SS133
    Text: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage


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    PDF 1SS133 100mA SEMTECH 1SS133 1SS133

    DIODE 1SS133

    Abstract: 1SS133
    Text: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters


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    PDF 1SS133 130mA DO-34 DO-34 100uA 100mA to100KHZ 1-Jun-03 DIODE 1SS133 1SS133

    1SS133

    Abstract: DIODE 1SS133
    Text: LESHAN RADIO COMPANY, LTD. Switching diode 1SS133 . 300mW DO-34 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V) IFM(mA)


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    PDF 1SS133 300mW DO-34 5000pcs/each 260mm 1SS133 DIODE 1SS133

    1SS133

    Abstract: v405
    Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 35 V CURRENT: 110 mA FEATURES DO - 35 GLASS Glass sealed envelope. (MSD) High reliability MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.005 ounces, 0.14 grams


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    PDF 1SS133 DO-35, 400TANCE 1/10IR 1SS133 v405

    1SS133

    Abstract: No abstract text available
    Text: TH97/10561QM 1SS133 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODE DO - 34 Glass FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free 1.00 25.4


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    PDF TH97/10561QM 1SS133 TW00/17276EM TH07/1033 DO-34 1SS133

    1SS133

    Abstract: 1ss133 diode DIODE 1SS133 ROHM 1SS133 diode switching do-34 rohm yellow band glass diode
    Text: 1SS133 Diodes High-speed switching diode 1SS133 ! Applications External dim ensions Units : mm High speed switching ! Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1,2ns Typ.) I Construction Silicon epitaxial planar ! Absolute maximum ratings (Ta=25°C)


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    PDF 1SS133 1SS133 1ss133 diode DIODE 1SS133 ROHM 1SS133 diode switching do-34 rohm yellow band glass diode

    1SS133

    Abstract: No abstract text available
    Text: K /D io d es 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 y U □ > l v 7 f K Silicon Epitaxial Planar High-Speed Switching Diodes • W KTfSIH /Dim ensions Unit : mm 1) S / J 'S » T * S o 2) M i t m & T & Z ' . 3) itS lJ t (trr=2ns Typ.) ? & 5 o


    OCR Scan
    PDF 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 1SS133 1SS132 1SS131 1SS133

    1N9168

    Abstract: 1SR35-100A 1SS135 1N41S4 1S2473 RB100A 1n700 1ss252 RB721Q ZENER3
    Text: Diodes Quick reference tmmmmmmmmmmmmmmi I Application Vr V MSR ( ¿2.5) I Molded I SP9Pln Package 100-35 (41.8) Part No. I TO-220FD Ultra High-speed Low-leakage High-vottage Switching « I 00-34 U 1.8) IUSD (¿1.8) 10041(417) 1S82787 1SS 134 1SS133 50 1S2472


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    PDF O-220FD 1S82787 1S2473 1S2472 1S2471 1SS41 1SS94 1SS93 1SS92 1SS141 1N9168 1SR35-100A 1SS135 1N41S4 RB100A 1n700 1ss252 RB721Q ZENER3