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    1S1941 Search Results

    1S1941 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1S1941 Galaxy Semi-Conductor Holdings PLASTIC SILICON RECTIFIER Original PDF
    1S1941 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S1941 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1S1941 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    1S1941 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1S1941 Unknown Cross Reference Datasheet Scan PDF
    1S1941B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1S1941L Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    1S1941 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1S1941

    Abstract: 1S1944
    Text: BL GALAXY ELECTRICAL 1S1941 Z - - -1S1944(Z) VOLTAGE RANGE: 100 - 600 V CURRENT: 0.5 A PLASTIC SILICON RECTIFIER FEATURES DO - 15 Low cost Diffused juncton Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


    Original     		PDF 1S1941 -1S1944 DO--15 STD-202 014ounces 1S1944

    1S1941

    Abstract: 1S1944 diode 1S1944
    Text: BL GALAXY ELECTRICAL 1S1941 Z -1S1944(Z) VOLTAGE RANGE: 100 - 600 V CURRENT: 0.5 A PLASTIC SILICON RECTIFIER FEATURES DO - 15 Low cost Diffused juncton Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


    Original     		PDF 1S1941 ---1S1944 DO--15 STD-202 014ounces 1S1944 diode 1S1944

    1s1941-1s1944

    Abstract: No abstract text available
    Text: 1S1941-1S1944 Plastic Silicon Rectifier VOLTAGE RANGE: 100 - 600 V CURRENT: 0.5 A Features DO - 15 Low cost Diffused juncton Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0


    Original     		PDF 1S1941-1S1944 DO--15 STD-202 014ounces 300uS 1s1941-1s1944

    1ZB36

    Abstract: 0R1QYZ41 4D4B44 6b4b41 4D4B41 s5502n 0R1NYZ41 30jh11 10L6P44 30L6P43A
    Text: [ 10 ] 保守廃止品種一覧表 [ 10 ] 保守廃止品種一覧表 次の品種が保守品種および廃止品種となっております。新規採用は代替推奨品種にてご検討くださいま すようお願いいたします。 2003-3-1 現在


    Original     		PDF 05D4B48 1G4B42 0R5G4B42 1GH62 0R8DU41 0R8GU41 1J4B42 10BL2C41 10DL2C41A 1JH62 1ZB36 0R1QYZ41 4D4B44 6b4b41 4D4B41 s5502n 0R1NYZ41 30jh11 10L6P44 30L6P43A

    SBLF10100CT

    Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
    Text: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V


    Original     		PDF SZQ50A24L3 SZQ50A28L3 SZQ50A34L3 SZQ50A38L3 SZQ50K24L3 SZQ50K28L3 SZQ50K34L3 SZQ50K38L3 SBLF10100CT SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    4D4B44

    Abstract: 4G4B44 4B4B44 4B4B41 1ZB36 U1Z36 S5188 S5500G 4J4B44 U1Z13
    Text: D I S C O N T I N U E D T Y P E L IS T P art No. 0R06NXZ31 0R06YXZ31 0R5D4B42 1DZ6K1N5059 1GZ61 1N5060) 1JZ61 ( 1N5061 ) 1LE11 1LZ6K1N5Û62) 1N4001A 1N4002A 1N4003A 1N4004A 1N4005A 1N4006A 1N4006E 1N4007A 1NE11 1QE11 1S220 1S221 1S222 1S223 1S224 1S225


    OCR Scan     		PDF 0R06NXZ31 0R06YXZ31 0R5D4B42 1DZ6K1N5059) 1GZ61 1N5060) 1JZ61 1N5061 1LE11 1N4001A 4D4B44 4G4B44 4B4B44 4B4B41 1ZB36 U1Z36 S5188 S5500G 4J4B44 U1Z13

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17