1P F TRANSISTOR Search Results

Contextual Info: MOTOROLA O rder this docum ent by m t d f i p o 2 h d / d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D F 1P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

MJH16010

Abstract: MJ16010 MJ16012 MJH16012 100-C h1601
Contextual Info: ~Öi » F |3 ä 7 5 0 fll 3 aai7D 70 I~ 3875081 G E SO LID STATE 0 1E 17 070 SwftcäMa* Power MJ16010, MJ16012 MJH16010,MJH16012 D > U I File N u m b e r 1P 1839 5-A Sw itchM aX II Power Transistors

TRANSISTOR BC 545

Contextual Info: MOTOROLA O n to r H iin r in ru iM iit SEMICONDUCTOR TECHNICAL DATA by MTDF1P02HD/D Designer’s Data Sheet M T D F 1P 0 2H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor DUAL TMOS POWER MOSFET

CM603

Contextual Info: 6DI3OA-O5O 30a Ä ± / < 7 — Ì V ; Outline Drawings , < n - \ = 7 > V 'T s ^ i> z l - ; u POWER TRANSISTOR MODULE (10), H.& j I9.5~ . H .5 . 1|,& . (1p}| F e a tu re s • 7 '} — X ' f <J ' s '? $ 4 + — K r t/K • liF E ^ 'iS i.' • S6i&Jfi In c lu d in g 'F re e W h e e lin g D iode

Contextual Info: 1P aramet er fax id: 7250 Mea - sure men t In forma tio n Parameter Measurement Information Features • Function, pinout, speed, and drive compatible with F Logic • Meets requirements of FCT Logic JEDEC Standard No. 18A • Edge-rate control circuitry for significantly improved

TRANSISTOR AH-10

Abstract: pgl203 PG1200 PG1201 PG1202 PG1203 PG1204 PG1205 PG1206 PG1207
Contextual Info: A P I ELECTRONICS INC 13 F T J d G 4 3 S cì2 DOOOOTl □ | '~33r 0 ^ _ INTERIM BULLETIN Su b je ct to R evision W ithout Notice Q 1P JR G POWER TRANSISTOR ENGINEERING BULLETIN -July 15, 1971 -ELECTRontcs inc. TYPE PG1200 thru PG1211, 5 A M P NPN SILICON PLANAR POWER TRANSISTORS

Contextual Info: “¡ 1 niCROPAC IND UST RIES INC PE I Mii-66003 5 CHANNEL OPTO-COUPLER la llg b M D □□00357 f 1p - V / - 5 Ÿ3 OPTOELECTRONIC PRODUCTS ; DIVISION 16 FEA TU R ES 15 14 13 12 11 10 9 O O O O O O O Q \f] • Hybrid construction • 5 channels of optocoupling capability in a small

SMBT4403

Abstract: SMBT5401 SMBT4401 marking 2G SOT23
Contextual Info: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401

fuji ipm

Abstract: fuji electric ipm 4504 opto kic 125 6MBP75NA060-01 optocoupler 1g Hpcl
Contextual Info: SPECIFICATION Device Name : I G B T - 1P M Tyoo Name : 6 M B P7 5 N A 060-0 1 Spec No. : M S6 M0276 F u ji E lectric C o .L td . Matsumoto Factory DATE AWN XFD NAME APPROVED Fuji Electric Co.,Ltd. n-XtiLJkiJhi •/. • o ¿C M Û S 6 M 2 7 6 w i s H04-004-07

transistor BR A 94

Abstract: bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A
Contextual Info: BCW94 A.B.C BCW95A.B NPN SILICO N TRANSISTOR, EPIT A X IA L PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L • LF Amplification Amplification B F CE0 I 40 V BCW 94 160 V BCW 95 ■c °<4 A h ,1P 100-200 (A <B) (C) (1 5 0 m A 7 w iS 1 5 0 ' 3 0 0

LMBT2222ATT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.

RT1*p136x

Abstract: RT1P136C RT1P136S RT1N136X RT1P136M RT1P136T2 RT1P136U RT1P136X p136x
Contextual Info: RT1 P I 36X SERIES Tr„ „ J 7" * For S w itching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE RT1P136X ¡1 a one chip transistorwith built-in bias resistor.NPN type is RT1N136X UNIT mm DRAWING RT1P136U R T 1P 136C 0S5 15 :¿S5 FEATURE •Built-in bias resistor [R1 = 1kO,R2-tOkí?5.

TRANSISTOR 1P

Abstract: 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 2SC4989 1P RF uhf power transistor 50W
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4989 is a silicon NPN epitaxial planar type transistor O UTLINE DRAW ING Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEA TU R ES • High power output and high gain : Po S 65W, Gpe S 5.1 dB,

M1B marking

Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,

transistor k72

Contextual Info: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

2SC741

Abstract: transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC741 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2SC741 is a silicon NPN epitaxial planar type transistor designed fo r industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

2SC2053

Abstract: transistor 2sc2053 mitsubishi 2sc2053 transistor 8d 2SC205 TRANSISTOR 1P mitsubishi vcb RF POWER TRANSISTOR NPN 1P transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for R F amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X

transistor marking 1p Z

Abstract: 2N7002W
Contextual Info: PRELIMINARY 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Low On-Resistance: 2 .5 Q. Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package

LMBT2222AWT1G

Abstract: marking 1p npn transistor 1P F
Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate