2SC3404 Search Results

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

package drawing T46

Abstract: 2SC3404 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 3404 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. C 1 .5 M A X D im e n s io n s in m m

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

2SC3431

Abstract: 2SC3402 2SC3381 2SC3379 2SC3382 2SC3383 2SC3390 2SC3391 2SC3392 2SC3393
Contextual Info: - 156 - MX'Ëtë Ta=25°C, *EPÍáTc=25cC m % tt VcBO « (V) 2SC3379 H S 2SC3380 H i HF PA VcEO (V) IC(DC) (A) 20 Pc m Pc* (W) ICBO (max) (//A) (W) 1.5 10 m ft fé t t (Ta=25'C) hF E Vc b (V) (min) (max) , > , , > (max) (V) Ic / I e (A) VcE (V) [*EPfátypíÍ]

2SC144

Abstract: 2SD466 2sc5266
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HPA C band

Contextual Info: • 15V Series for C A TV /M A T V Amplifiers <Tc = 25’C> Max. ratines Type No. Application HPA 2SC1324 Structur# Si,NPN,EP > fa {A} Pc W 35 4.0 0.15 3 A + 175 (ài (min) .{Hh-c leao w UA) Sf f (MHz) •c (mA) dB 50 50 15 770 0.03 9 Wm Package outline