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    Microchip Technology Inc 1N6622US

    DIODE STANDARD 660V 1.2A AMELF
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    DIODE STANDARD 600V 1.2AXIAL
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    Microchip Technology Inc 1N6622U

    DIODE STD 660V 1.2A A SQMELF
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    1N6622 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N6622 Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE ULTRA FAST 600V 1.2A APAK Original PDF
    1N6622 Microsemi Ultra Fast Rectifiers Scan PDF
    1N6622 Microsemi Ultra Fast Rectifier Scan PDF
    1N6622/TR Microchip Technology RECTIFIER UFR,FRR Original PDF
    1N6622U Microsemi Ultra Fast Rectifier (less than 100ns) Scan PDF
    1N6622US Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE RECT ULT FAST REC A-MELF Original PDF
    1N6622US Microsemi Ultra Fast Rectifiers Scan PDF
    1N6622US Microsemi Ultra Fast Rectifier Scan PDF
    1N6622US/TR Microchip Technology RECTIFIER UFR,FRR Original PDF

    1N6622 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5806

    Abstract: 1N5616UL
    Text: SENSrriON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC SURFACE MOUNT RECTIFIERS - MELFs U L T R A F A S T R E C O V E R Y 25 n s e c PEAK INVERSE VOLTAGE TYPE NUMBER Volts SSM16UHE SSM180HE SSM1100HE 600 800 1000 1N6620U 1N6621U 1N6622U 1N6623U


    OCR Scan     		SSM16UHE SSM180HE SSM1100HE 1N6620U 1N6621U 1N6622U 1N6623U 1N6624U 1N6625U 1N5802U 1N5806 1N5616UL PDF

    1N6622US

    Abstract: No abstract text available
    Text: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N6622US PACKAGE STYLE:MELF-A CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 600 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C


    Original     		1N6622US 1N6622US PDF

    1N6622

    Abstract: No abstract text available
    Text: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N6622 PACKAGE STYLE:106 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 600 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C


    Original     		1N6622 1N6622 PDF

    1N6624U JANTXV

    Abstract: "Ultra-Fast Recovery Rectifiers" 1N6629U JANTX JANTX 1N5811
    Text: HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25 nsec ≤ trr ≤ 70 nsec TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAXIMUM REVERSE CURRENT @ PIV Volts Amps 55°C 100°C µAmps 25°C 100°C SRS160HE SRS180HE SRS1100HE 600 800


    Original     		SRS160HE SRS180HE SRS1100HE 1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 SRS1120HE 1N6624U JANTXV "Ultra-Fast Recovery Rectifiers" 1N6629U JANTX JANTX 1N5811 PDF

    1N6621

    Abstract: 1N6620 1N6625 RECTIFIER DIODE 1N 6621 6622 1N6622 1N6623 1N6624 CA 6623
    Text: 1N6620 THRU 1N6625 Axial Leaded Hermetically Sealed Ultra Fast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop


    Original     		1N6620 1N6625 Non-Repeti623 1N6624 1N6621 1N6625 RECTIFIER DIODE 1N 6621 6622 1N6622 1N6623 1N6624 CA 6623 PDF

    1N6623

    Abstract: 1N6620 1N6621 1N6624 1N6620U 1N6622 1N6625 1N6625U 1N6623U
    Text: SENSITRON SEMICONDUCTOR SS6620,U,US thru SS6625,U,US TECHNICAL DATA DATA SHEET 5090, REV. A Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -65 C to +175 MAX. RATINGS / ELECTRICAL CHARACTERISTICS


    Original     		SS6620 SS6625 1N6620, 1N6621, 1N6622, 1N6623, 1N6624 1N6625, 1N6623 1N6620 1N6621 1N6624 1N6620U 1N6622 1N6625 1N6625U 1N6623U PDF

    469s

    Abstract: 1N6620 1N6621
    Text: 1N6620 thru 1IU6625 M iC i SANTA ANA , CA SCOTTSDALE, AZ For more information call: ULTRA FAST RECTIFIERS 602 941-6300 .030 ± .002 DIA. (.78) Features • • • • • • • A X IA L A N D SURFACE M O U N T CON FIG URATION S HIGH VO LT AG E W IT H ULTRA FAST REC O V ER Y TIM E


    OCR Scan     		1N6620 1IU6625 MIL-S-19500/585 469s 1N6621 PDF

    MSP6620US

    Abstract: 1N6623 1N6620 1n6625 fast recovery 1000 volt JAN 1N6620US 1N6622 1N6625US EIA-481-B Microsemi micronote series 050
    Text: 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620US 1N6625US MIL-PRF19500/585 1N6620 1N6625) 1N6620US MSP6620US 1N6623 1n6625 fast recovery 1000 volt JAN 1N6622 1N6625US EIA-481-B Microsemi micronote series 050 PDF

    LN4148

    Abstract: 1N2074A PWM IR2112 IRF540 h bridge ir2110 555 igbt driver IR2117 IR2119 power inverter schematic diagram ir2110 IR2110 h bridge inverter ac control using ir2110 IR2110 INVERTER SCHEMATIC
    Text: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


    Original     		AN978 116ns AN-967 AN-961 AN-959 LN4148 1N2074A PWM IR2112 IRF540 h bridge ir2110 555 igbt driver IR2117 IR2119 power inverter schematic diagram ir2110 IR2110 h bridge inverter ac control using ir2110 IR2110 INVERTER SCHEMATIC PDF

    SP6620US

    Abstract: 1N6620 1N6620US 1N6622 1N6623 1N6625 1N6625US EIA-481-B Microsemi micronote series 050 1N6621 JANTX
    Text: 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620US 1N6625US MIL-PRF19500/585 1N6620 1N6625) 1N6620US SP6620US 1N6622 1N6623 1N6625 1N6625US EIA-481-B Microsemi micronote series 050 1N6621 JANTX PDF

    1N6620

    Abstract: 1N6620US 1N6622 1N6623 1N6625 1N6625US 1N6621
    Text: 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620 1N6625 MIL-PRF19500/585 1N6620US 1N6625US) 1N6622 1N6623 1N6625 1N6625US 1N6621 PDF

    he804

    Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
    Text: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs


    Original     		PDF

    1N6620

    Abstract: No abstract text available
    Text: 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARAN CE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620US 1N6625US MIL-PRF19500/585 1N6620 1N6625) 1N6620US SD52A PDF

    power inverter schematic diagram ir2110

    Abstract: IR2110 INVERTER SCHEMATIC Inverter IR2110 PWM IR2112 IRF540 1n2074a power inverter schematic diagram irf740 full bridge ir2110 INT978 Full-bridge IR2110 IR2110 full bridge inverter
    Text: INT978 HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD Bootstrap operation How to select the bootstrap components How to calculate the power dissipation in the MGD


    Original     		INT978 116ns AN-967 AN-961 AN-959 power inverter schematic diagram ir2110 IR2110 INVERTER SCHEMATIC Inverter IR2110 PWM IR2112 IRF540 1n2074a power inverter schematic diagram irf740 full bridge ir2110 INT978 Full-bridge IR2110 IR2110 full bridge inverter PDF

    1N6620

    Abstract: 1N6625 JANTX 1N6620US 1N6622 1N6623 1N6625 1N6625US
    Text: 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620 1N6625 MIL-PRF19500/585 1N6620US 1N6625US) 1N6625 JANTX 1N6622 1N6623 1N6625 1N6625US PDF

    1N6625

    Abstract: 1N6620 1N6621 1N6622 1N6620U 1N6623 1N6624 1N6625U
    Text: SENSITRON SEMICONDUCTOR 1N6620,U,US thru 1N6625,U,US TECHNICAL DATA DATA SHEET 5089, REV. A SJ SX SV Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -65 C to +175 MAX. RATINGS / ELECTRICAL CHARACTERISTICS


    Original     		1N6620 1N6625 1N6620, 1N6621, 1N6622, 1N6623, 1N6624 1N6625, 1N6621 1N6622 1N6620U 1N6623 1N6624 1N6625U PDF

    power inverter schematic diagram ir2110

    Abstract: IR2110 INVERTER SCHEMATIC 1n 4148 zener diode DIODE LN4148 full bridge ir2110 IR2110 full bridge inverter PWM IR2112 IRF540 pin configuration IR2110 INVERTER DIAGRAM 1n2074a Inverter IR2110
    Text: Index AN-978 V. Int HV Floating MOS-Gate Driver ICs (HEXFET is a trademark of International Rectifier) Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD Bootstrap operation How to select the bootstrap components


    Original     		AN-978 116ns AN-967 AN-961 AN-959 power inverter schematic diagram ir2110 IR2110 INVERTER SCHEMATIC 1n 4148 zener diode DIODE LN4148 full bridge ir2110 IR2110 full bridge inverter PWM IR2112 IRF540 pin configuration IR2110 INVERTER DIAGRAM 1n2074a Inverter IR2110 PDF

    1n2074a

    Abstract: DT98-2a Bootstrap Component Selection for Cont power inverter schematic diagram ir2110 AN978a Inverter IR2110 full bridge ir2110 PWM IR2112 IRF540 ac control using ir2110 and mosfet h bridge irf740 h bridge ir2110
    Text: APPLICATION NOTE AN978-b International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


    Original     		AN978-b 116ns AN-967 AN-961 AN-959 1n2074a DT98-2a Bootstrap Component Selection for Cont power inverter schematic diagram ir2110 AN978a Inverter IR2110 full bridge ir2110 PWM IR2112 IRF540 ac control using ir2110 and mosfet h bridge irf740 h bridge ir2110 PDF

    MSP6620US

    Abstract: 1N6620
    Text: 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620US 1N6625US MIL-PRF19500/585 1N6620 1N6625) 1N6620US 1N6625US MSP6620US PDF

    1N6620

    Abstract: 1N6625 1N6623 1N6620US 1N6622 1N6625US 1N6621 JANTXV 1N6625 JANTX 1N6623 JANTX
    Text: 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620 1N6625 MIL-PRF19500/585 1N6620US 1N6625US) 1N6625 1N6623 1N6622 1N6625US 1N6621 JANTXV 1N6625 JANTX 1N6623 JANTX PDF

    1N6621US

    Abstract: 1N6624US 6621U 1n6622us
    Text: 1N6620 THRU 1N6625 Surface Mount US Ultra Fast Recovery Rectifier Diode POWER DISCRETES Description - Preliminary Features Quick reference data Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop


    Original     		1N6620 1N6625 6620U 6621U 6622U 6623U 6624U 6625U 6624US 1N6625US 1N6621US 1N6624US 1n6622us PDF

    1N6621

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC AXIAL LEAD RECTIFIERS U L T R A F A S T RECOV ERY DEVICES 25 nsec TYPE NUMBER PEAK INVERSE VOLTAGE SRS160HE SRS180HE SRS1100HE Volts 600 800 1000 t rt MAX, AVG. DC OUTPUT CURRENT MAXIMUM


    OCR Scan     		1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 1N5802 1N5804 1N5806 1N5807 PDF

    TRANSISTOR J 5804 NPN

    Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
    Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV


    OCR Scan     		1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, 1N5767 1N5802 1N5802, 1N5804, TRANSISTOR J 5804 NPN TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621 PDF

    1N6620

    Abstract: SP6620US 1N6620US 1N6622 1N6623 1N6625 1N6625US EIA-481-B Microsemi micronote series 050 1N6623 JANTX
    Text: 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be


    Original     		1N6620US 1N6625US MIL-PRF19500/585 1N6620 1N6625) 1N6620US SD52A SP6620US 1N6622 1N6623 1N6625 1N6625US EIA-481-B Microsemi micronote series 050 1N6623 JANTX PDF