1N6507 Search Results
1N6507 Price and Stock
Microchip Technology Inc 1N6507TVS DIODE 14CDIP |
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1N6507 | Bulk | 111 Weeks | 100 |
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Microchip Technology Inc JAN1N6507Arrays _ 14L CDIP, Projected EOL: 2049-02-05 |
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Microchip Technology Inc JANTX1N6507Arrays _ 14L CDIP, Projected EOL: 2049-02-05 |
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Microchip Technology Inc JANTXV1N6507Arrays _ 14L CDIP, Projected EOL: 2049-02-05 |
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VPT Components JANS1N6507MIL-PRF-19500/474 |
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1N6507 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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1N6507 |
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MONOLITHIC AIR ISOLATED DIODE ARRAY | Original | |||
1N6507 |
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Diode Array; Package: DIP; Cj (pF): 8; trr (nsec): 20; VF (V): 1; IF (A): 0.3; Vrrm (V): 60; | Original | |||
1N6507J |
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Diode Array | Original |
1N6507 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1N6507 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing |
Original |
1N6507 10-PIN 1N6506 1N6507 | |
Contextual Info: 1N6507 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARAN CE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as |
Original |
1N6507 10-PIN 1N6506 | |
Contextual Info: 1N6507 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing |
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1N6507 10-PIN 1N6506 1N6507 | |
1N6506
Abstract: 10-PIN 1N6507
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1N6507 10-PIN 1N6506 1N6506 1N6507 | |
Contextual Info: J Z ^ r\/E O HLHB5 1N6507 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA |
OCR Scan |
1N6507 100nA 100mAdc 500mAdc 200mAdc, 20mAdc, 300us MSC1018 | |
MSC1018
Abstract: 1N6507
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1N6507 100nA 100mAdc 500mAdc 200mAdc, 20mAdc, 300us MSC1018 1N6507 | |
diode 474 aContextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6507 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, |
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MIL-PRF-19500/474 1N6507 10-PIN 1N6506 T4-LDS-0085 diode 474 a | |
cczl
Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
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QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251 | |
U11H
Abstract: linfinity 8 ceramic dip ir U11H
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OCR Scan |
SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 500mA MIL-S-19500 0QD355D 14-PIN SG6509J U11H linfinity 8 ceramic dip ir U11H | |
SG5772FContextual Info: LIN Doc #; 5768 SGS768/SG5770/SG5772/SG5774 SG6506/SG6507/SG6508/SG6509 D T he I n f i n i t e P o w e r o f I n n o v a t i i ode A P r o d u c t i o n DESCRIPTION T he Linfinity series o f d io d e arrays fe a tu re h ig h b re a k d o w n , h ig h s p e e d |
OCR Scan |
SGS768/SG5770/SG5772/SG5774 SG6506/SG6507/SG6508/SG6509 500mA SG6508J SG5772F 1N5772) SG6507J 1N6507) SG5770F 1N5770) SG5772F | |
Contextual Info: 1N6506 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by |
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1N6506 10-PIN 1N6507 | |
1N6496
Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
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MIL-PRF-19500/474G MIL-PRF-19500/474F 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6496 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100 | |
1N6506
Abstract: 10-PIN 1N6507
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1N6506 10-PIN 1N6507 1N6506 1N6507 | |
linfinity
Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
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SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 500mA 14-PIN SG6509J 1N6509) linfinity MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772 | |
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1N5770Contextual Info: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS, |
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MIL-PRF-19500/474F MIL-PRF-19500/474E 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N5770 | |
10-PIN
Abstract: 1N6507 mx marking
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10-PIN 1N6507 1N6507 mx marking | |
Contextual Info: 1N6506 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARAN CE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for |
Original |
1N6506 10-PIN 1N6507 | |
Contextual Info: 1N6506 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by |
Original |
1N6506 10-PIN 1N6507 |