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    1N60B Search Results

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    1N60B Price and Stock

    Rochester Electronics LLC SSR1N60BTF

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSR1N60BTF Bulk 76,000 1,158
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    Rochester Electronics LLC SSR1N60BTM

    MOSFET N-CH 600V 900MA DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSR1N60BTM Bulk 28,521 1,567
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    Rochester Electronics LLC SSU1N60BTU

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSU1N60BTU Bulk 25,769 2,219
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    Rochester Electronics LLC SSS1N60B

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSS1N60B Bulk 3,684 2,049
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    Rochester Electronics LLC SSR1N60BTM-WS

    MOSFET N-CH 600V 900MA DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSR1N60BTM-WS Bulk 2,350 1,567
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    Find more 1N60B price and stock on Findchips.com

    1N60B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N60 BK Central Semiconductor DIODE SCHOTTKY 100V 100MA DO7 Original PDF

    1N60B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N6A

    Abstract: N552 zener 431 IN5530 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523
    Text: 7V SEMICONDUCTORS INC DTE D | fllBhbSQ ODODESB h | //~/3 Low Voltage Avalanche Zener Diodes These low voltage avalanche zener diodes are specifically designed for low current, low noise applications. The very sharp knees, low leakages, and low im p e d a n c e s at low


    OCR Scan     		013bbS0 250uA CurrN6088 1N6090 1N6091 1N6A N552 zener 431 IN5530 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 PDF

    1N60 mosfet

    Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


    Original     		OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-052 PDF

    1N60B

    Abstract: No abstract text available
    Text: 1N60B 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger


    Original     		HY1N60B 2002/95/EC MIL-STD-750 1N60B 125oC -55oC 1N60B PDF

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-252 O-220 QW-R502-052 1n60 PDF

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF

    N6037

    Abstract: 1N60B
    Text: Transient Voltage S u p p r e s s io n TVS D io d e s .1 N 6 0 3 6 Series - 1 N 607 2 A C^YDDM Control over power Invisible Protection M A XIM U M RATINGS W hen no problem s exist, Crydom T V S • P e ak pulse p o w e r (P p k ): D iod es are totally invisible to the circuits


    OCR Scan     		IN60i 1N6036 N6037 1N60B PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-052 PDF

    mosfet 1N60

    Abstract: 1n60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-052 mosfet 1N60 1n60 1N60 TO92 PDF

    1n60b

    Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-052 1n60b 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60 PDF

    600V 2A SOT223 MOSFET N-channel

    Abstract: 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


    Original     		OT-223 O-220 QW-R502-052 600V 2A SOT223 MOSFET N-channel 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G PDF