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    1N60AG Price and Stock

    Vishay Intertechnologies SIHFR1N60A-GE3

    MOSFET N-CHANNEL 600V - Tape and Reel (Alt: SIHFR1N60A-GE3)
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    Avnet Americas SIHFR1N60A-GE3 Reel 15 Weeks 3,000
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    TTI SIHFR1N60A-GE3 Reel 3,000
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    TME SIHFR1N60A-GE3 89 1
    • 1 $0.862
    • 10 $0.78
    • 100 $0.616
    • 1000 $0.575
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    EBV Elektronik SIHFR1N60A-GE3 11 Weeks 75
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    Vishay Intertechnologies SIHFR1N60AGE3

    Power MOSFET Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA SIHFR1N60AGE3 3,000
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    1N60AG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    1n60ag

    Abstract: 1N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 1n60ag PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091. PDF

    1n60ag

    Abstract: 1N60A 1n60al T92 DIODE XT92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 1n60ag 1n60al T92 DIODE XT92 PDF