1N60 germanium diode
Abstract: germanium diode 1N60 041 germanium DIODE 1N60 diode 1N60H selenium diode 1n60 germanium diode GOLD diode 041
Text: 1N60 GOLD BONDED GERMANIUM DIODE 0.41 Diodes Germanium and Selenium . Page 1 of 1 Enter Your Part # Home Part Number: 1N60 Online Store 1N60 Diodes GOLD BONDED GERMANIU M DIODE Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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com/1n60
1N60 germanium diode
germanium diode 1N60
041 germanium DIODE
1N60 diode
1N60H
selenium diode
1n60
germanium diode GOLD
diode 041
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
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UTC1N60
Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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OT-223
O-220
O-220F
O-251
O-252
QW-R502-052
UTC1N60
1N60L
1N60GA
1N60G
1N60 mosfet
to126 mosfet
mosfet 12A 600V
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mosfet 1N60
Abstract: 1n60 1N60 TO92
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
mosfet 1N60
1n60
1N60 TO92
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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1n60b
Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60b
1N60 diode
1N60 mosfet
1N60A
600V 2A SOT223 MOSFET N-channel
1N60G
1N60-B
1N60
diode 1n60
UTC1N60
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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1N60-KW
1N60-KW
QW-R205-054
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-252
O-220
QW-R502-052
1n60
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1N60 MOSfet
Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
QW-R502-052
1N60 MOSfet
1N60 diode
1N60-TM3-T
1N60
diode 1n60
1N60-TA3-T
c25 diode to220
c25 mosfet
1N60L-TF3-T
1N60L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220F2
OT-223
O-220
O-220F
QW-R502-052
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Untitled
Abstract: No abstract text available
Text: Part: 1N6043 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6043
/10x1000Â
10x160Â
10x1000
10x1000Â
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Untitled
Abstract: No abstract text available
Text: Part: 1N6036 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6036
/0x1000Â
10x160Â
10x1000
10x1000Â
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Untitled
Abstract: No abstract text available
Text: Part: 1N6055A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6055A
10x1000Â
10x160Â
10x1000
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diode 1n6045
Abstract: No abstract text available
Text: Part: 1N6045 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6045
/10x1000Â
10x160Â
10x1000
10x1000Â
diode 1n6045
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Untitled
Abstract: No abstract text available
Text: Part: 1N6068 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6068
10x160Â
10x1000
10x1000Â
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Untitled
Abstract: No abstract text available
Text: Part: 1N6053 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6053
/10x1000Â
10x160Â
10x1000
10x1000Â
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diode 1n60
Abstract: 1N60 diode
Text: Part: 1N6040 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6040
10x1000Â
10x160Â
10x1000
diode 1n60
1N60 diode
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1N6042
Abstract: 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A
Text: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability
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DO-13
1N6069A*
1N6070
1N6070A
1N6071*
1N6071A*
1N6072
1N6072A
1N6042
1N6069
1N6052A
1N6053A
diode 1n60
1N6058A
1N6038
1N6049
1N6054
1N6055A
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1N60 diode
Abstract: diode 1n60 1N60 1N60 Schottky 1N60 diode resistance 1N60P Diode Equivalent 1N60
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
200mA
Fax0755-8324
1N60 diode
diode 1n60
1N60
1N60 Schottky
1N60 diode resistance
1N60P
Diode Equivalent 1N60
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1n60 diode
Abstract: 1n60 1N60P diode 1n60 1N60 Schottky DIODE 1n60p
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
200mA
1-Sep-2009
1n60 diode
1n60
diode 1n60
1N60 Schottky
DIODE 1n60p
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Untitled
Abstract: No abstract text available
Text: Part: 1N6047 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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1N6047
/10x1000Â
10x160Â
10x1000
10x1000Â
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