1N60 germanium diode
Abstract: germanium diode 1N60 041 germanium DIODE 1N60 diode 1N60H selenium diode 1n60 germanium diode GOLD diode 041
Text: 1N60 GOLD BONDED GERMANIUM DIODE 0.41 Diodes Germanium and Selenium . Page 1 of 1 Enter Your Part # Home Part Number: 1N60 Online Store 1N60 Diodes GOLD BONDED GERMANIU M DIODE Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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com/1n60
1N60 germanium diode
germanium diode 1N60
041 germanium DIODE
1N60 diode
1N60H
selenium diode
1n60
germanium diode GOLD
diode 041
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
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UTC1N60
Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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OT-223
O-220
O-220F
O-251
O-252
QW-R502-052
UTC1N60
1N60L
1N60GA
1N60G
1N60 mosfet
to126 mosfet
mosfet 12A 600V
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mosfet 1N60
Abstract: 1n60 1N60 TO92
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
mosfet 1N60
1n60
1N60 TO92
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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1n60b
Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60b
1N60 diode
1N60 mosfet
1N60A
600V 2A SOT223 MOSFET N-channel
1N60G
1N60-B
1N60
diode 1n60
UTC1N60
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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1N60-KW
1N60-KW
QW-R205-054
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-252
O-220
QW-R502-052
1n60
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1N60 MOSfet
Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
QW-R502-052
1N60 MOSfet
1N60 diode
1N60-TM3-T
1N60
diode 1n60
1N60-TA3-T
c25 diode to220
c25 mosfet
1N60L-TF3-T
1N60L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220F2
OT-223
O-220
O-220F
QW-R502-052
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1N6042
Abstract: 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A
Text: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability
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DO-13
1N6069A*
1N6070
1N6070A
1N6071*
1N6071A*
1N6072
1N6072A
1N6042
1N6069
1N6052A
1N6053A
diode 1n60
1N6058A
1N6038
1N6049
1N6054
1N6055A
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Untitled
Abstract: No abstract text available
Text: 1N6036 - 1N6072A series 1N60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) Min 31.8 FEATURES ● Breakdown voltage range 6.8 - 200 volts Max 5.33 ● Glass passivated junction ● Excellent clamping capability
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1N6036
1N6072A
1N6069A*
1N6070
1N6070A
1N6071*
1N6071A*
1N6072
1N6072A
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Untitled
Abstract: No abstract text available
Text: 1N6036 - 1N6072A series 1N60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) Min 31.8 FEATURES ● Breakdown voltage range 6.8 - 200 volts Max 5.33 ● Glass passivated junction ● Excellent clamping capability
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1N6036
1N6072A
DO-13
1N6057
1N6057A
1N6058*
1N6058A*
1N6059*
1N6059A*
1N6060*
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SMALL SIGNAL SCHOTTKY DIODES DO-35
Abstract: 1N60P diode 1n60 1N60 diode 1N60P, DO-35 TC1N60 1N60 DO35 1N60 PACKAGE
Text: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage
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DO-35
1N60P
DB-046
SMALL SIGNAL SCHOTTKY DIODES DO-35
1N60P
diode 1n60
1N60 diode
1N60P, DO-35
TC1N60
1N60
DO35
1N60 PACKAGE
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2A 600V N-CHANNEL MOSFET 1 FEATURES TO- 251 * Typical RDS ON =9.3Ω@VGS = 10V. * Avalanche rugged technology * Low gate charge (typical 5.0nC) * Low Crss (typical 3.0 pF) * 100% avalanche tested * Excellent switching characteristics
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O-220
1N60L
1N60-TA3-T
1N60L-TA3-T
1N60-TM3-T
1N60L-TM3-T
1N60-TN3-R
1N60L-TN3-R
1N60-TN3-T
1N60L-TN3-T
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Untitled
Abstract: No abstract text available
Text: 1N6036 - 1N6072A series 1N60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) Min 31.8 FEATURES ● Breakdown voltage range 6.8 - 200 volts Max 5.33 ● Glass passivated junction ● Excellent clamping capability
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1N6036
1N6072A
DO-13
1N6057
1N6057A
1N6058*
1N6058A*
1N6059*
1N6059A*
1N6060*
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Low zener impedance • 100% surge tested
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DO-13
MIL-STD-206069*
1N6069A*
1N6070
1N6070A
1N6071*
1N6071A*
1N6072
1N6072A
1N6053*
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11n60p
Abstract: SMALL SIGNAL SCHOTTKY DIODES DO-35 1n60 DIODE 1n60p
Text: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage
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DO-35
1N60P
11n60p
SMALL SIGNAL SCHOTTKY DIODES DO-35
1n60
DIODE 1n60p
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diode 1n60
Abstract: 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35
Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage
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DO-35
1N60P
DB-100
diode 1n60
1n60 diode
1N60P
1N60
Diode Equivalent 1N60
1N60 PACKAGE
SMALL SIGNAL SCHOTTKY DIODES DO-35
TC1N60
DO35
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1n60
Abstract: No abstract text available
Text: 1N60 Small Signal Schottky Diodes VOLTAGE RANGE: 40V CURRENT: 0.03 A Features DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics
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DO--35
30MHz
1n60
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600V 2A SOT223 MOSFET N-channel
Abstract: 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)
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OT-223
O-220
QW-R502-052
600V 2A SOT223 MOSFET N-channel
1n60b
1n60 diode
T92 DIODE
1N60 mosfet
MOSFET 50V 100A TO-220
1N60 TO92
diode 1n60
Diode AA3
1N60G
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