FULL WAVE bridge RECTIFIER CIRCUITS
Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
FULL WAVE bridge RECTIFIER CIRCUITS
1N5821
TP2050
1N5820-D
Motorola 1N5820
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FULL WAVE RECTIFIER CIRCUITS
Abstract: schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5820 1N5821 1N5822
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
FULL WAVE RECTIFIER CIRCUITS
schottky rectifier motorola mbr
THERMAL RUNAWAY IN RECTIFIER
TP2050
1N5820-D
1N5821
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDA-301- 1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-27 PACKAGE Metal semiconductor junction with guard ring SERIES 1N5820 - 1N5822
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SBDA-301-
DO-27
1N5820
1N5822
DO-27
DO-27,
1N5821
1N5820
97bsbda301
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1N5822
Abstract: 95OC
Text: DATA SHEET 1N5822 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 Volts CURRENT 3.0 Ampere DO-201AD Unit: inch mm FEATURES • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,free wheeling ,and polarity protection applications .
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1N5822
DO-201AD
MIL-S-19500/228
DO-201AD
MIL-STD-202G
50mVp-p
1N5822
95OC
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1N5820
Abstract: 1N5822
Text: DATA SHEET 1N5820~1N5822 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volts CURRENT 3.0 Ampere DO-201AD Unit: inch mm FEATURES .052(1.3) .048(1.2) 1.0(25.4)MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.
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1N5820
1N5822
DO-201AD
MIL-S-19500/228
DO-201AD
50mVp-p
1N5822
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1n5822 BL
Abstract: 1N5822 DO-27 1N5820 1N5821 1N5822 DO-27 DO27 1N5820
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDA-301- 1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-27 PACKAGE Metal semiconductor junction with guard ring SERIES 1N5820 - 1N5822
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SBDA-301-
DO-27
1N5820
1N5822
DO-27
DO-27,
1N5821
1N5820
97bsbda301
1n5822 BL
1N5822 DO-27
1N5821
1N5822
DO27 1N5820
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDA-301- 1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-27 PACKAGE Metal semiconductor junction with guard ring SERIES 1N5820 - 1N5822
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SBDA-301-
DO-27
1N5820
1N5822
DO-27
DO-27,
100oC
97fsbd301
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1N5820~1N5822 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volts CURRENT 3.0 Ampere DO-201AD Unit: inch mm FEATURES .052(1.3) .048(1.2) 1.0(25.4)MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.
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1N5820
1N5822
DO-201AD
MIL-S-19500/228
DO-201AD
50mVp-p
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1N5822 MELF
Abstract: 1N6864 1N6864US 1N5822US JANHCA1N5822 1N5822 JANTX 1N5822 schottky barrier type rectifier 30v 3a 1N686 1n5822 BL
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 November 2007. MIL-PRF-19500/620G 10 August 2007 SUPERSEDING MIL-PRF-19500/620F 18 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER,
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MIL-PRF-19500/620G
MIL-PRF-19500/620F
1N5822
1N5822US,
1N6864
1N6864US,
MIL-PRF-19500.
1N5822 MELF
1N6864US
1N5822US
JANHCA1N5822
1N5822 JANTX
schottky barrier type rectifier 30v 3a
1N686
1n5822 BL
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDA-301- 1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 3 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-27 PACKAGE Metal semiconductor junction with guard ring
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SBDA-301-
DO-27
1N5820
1N5822
DO-27
DO-27,
97bsbda301
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1N5822RL
Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
1N5822RL
1N5820RL
1N5821
1N5821RL
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1N5822
Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
DIODE 1N5822
FULL WAVE RECTIFIER CIRCUITS
1N5820-D
1N5822 data sheet
1N5822 PACKAGE
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
sine wave inverter circuit diagram
1N5820RL
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1N5822
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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DIODE 1N5822
Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
DIODE 1N5822
1N5820RL
1N5821
1N5821RL
1N5822RL
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1N5820
Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820RL
1N5821
1N5821RL
1N5822RL
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half bridge LLC inverter
Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
half bridge LLC inverter
diode 1n5822g
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
1N5821RL
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1N5820
Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
DIODE T28
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1NS820
Abstract: No abstract text available
Text: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide
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1N5820
1N5821
1N5822
1NS820
1N5822
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n5822
Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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1N5820/D
1N5820
1N5821
1N5822
1N5B22
n5822
diode marking r6j
SCHOTTKY BRIDGE RECTIFIERS
Motorola 1N5820
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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OCR Scan
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PDF
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
1N5821
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1NS820
Abstract: MBR320P schottky rectifier motorola mbr 1N5821 equivalent bc 108c MBR320P-340P ATID MBR340P 1N5820 1N5822
Text: 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA D e s ig n e r s D a ta . S h e e t SCH O TTK Y B A R R IE R R E C T IF IE R S A X IA L LEAD R EC TIF IER S ' . . . employing the Schottky Barrier principle in a large area metal-tosilicon
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1N5820
MBR320P
1N5821
MBR330P
1N5822
MBR340P
1NS820
schottky rectifier motorola mbr
equivalent bc 108c
MBR320P-340P
ATID
MBR340P
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BR320P
Abstract: l 0850
Text: MOTOROLA SC {DIODES/OPTO} 12E J> I b3h7ESS OGV'iS? =l I T-Ô 3 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s D ata. S h e e t SCH O T T K Y B A R R IE R R E C T IF IE R S A X IA L LEAD RECTIFIERS
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1N5820
MBR320P
1N5821
MBR330P
1N5822
MBR340P
BR320P
l 0850
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IR0J
Abstract: MBR330P IN5822 MBR320P schottky rectifier motorola mbr 1N5820 1N5821 1N5822 MBR340P MBR320P-340P
Text: 1NS820 MBR320P 1N5821 MBR330P 1N5822 MBR340P MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA D e s ig n e r s D a ta . S h e e t S C H O T T K Y B A R R IE R A X IA L L E A D R E C T IF IE R S R E C T IF IE R S . . . e m p lo y in g th e S c h o ttk y B a rrie r p rin c ip le in a large area m e ta l-to -s ilic o n
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1n5822 BL
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No. SBDA-301-1B 1 3 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-27 PACKAGE • Metal sem iconductor ju n ctio n w ith guard ring
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SBDA-301-1B
1N5820
1N5822
DO-27
DO-27
DO-27,
1N5820
1N5821
1N5822
1n5822 BL
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