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    1N5819A Search Results

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    1N5819A Price and Stock

    Micro Commercial Components 1N5819-AP

    DIODE SCHOTTKY 40V 1A DO41
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    DigiKey 1N5819-AP Bulk 50,000
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    Mouser Electronics 1N5819-AP
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    Diodes Incorporated 1N5819A-01

    DIODE SCHOTTKY DO41
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    DigiKey 1N5819A-01 Bulk
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    Taiwan Semiconductor 1N5819 A0G

    Diode Schottky 40V 1A 2-Pin DO-41 Ammo - Tape and Reel (Alt: 1N5819 A0G)
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    Avnet Americas 1N5819 A0G Reel 12 Weeks 6,000
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    Mouser Electronics 1N5819 A0G 11,553
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    EBV Elektronik 1N5819 A0G 3,000
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    Diodes Incorporated 1N5819-A52

    Diode Schottky 40V 1A 2-Pin DO-41 Ammo Pack - Ammo Pack (Alt: 1N5819-A52)
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    Avnet Americas 1N5819-A52 Ammo Pack 3,000
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    Mouser Electronics 1N5819-A52
    • 1 $0.3
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    PanJit Semiconductor 1N5819_AY_10001

    Schottky Diodes & Rectifiers SCHOTTKY BARRIER RECTIFIERS
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    Mouser Electronics 1N5819_AY_10001
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    NAC 1N5819_AY_10001 5,000
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    Chip 1 Exchange 1N5819_AY_10001 55,617
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    Find more 1N5819A price and stock on Findchips.com

    1N5819A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5819 A0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 1A DO204AL Original PDF
    1N5819AMO Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5819-AP Micro Commercial Interface Original PDF

    1N5819A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5819a

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan     		1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Voltage: 20 to 40 V Current: 1.0 A RoHS Device DO-41 Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. 0.034 0.90 DIA. 0.028(0.70) -Low forward voltage drop. 1.000(25.40) Min.


    Original     		1N5817-G 1N5819-G DO-41 DO-41 Ch1N5818T-G 1N5819T-G 1N5817A-G 1N5818A-G 1N5819A-G 1N5817B-G PDF

    1N5817 SPICE

    Abstract: 1N5819a 1n5818b
    Text: SPICE MODELS: 1N5817 1N5818 1N5819 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · Schottky Barrier Chip · Lead Free Finish, RoHS Compliant Note 5 Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency


    Original     		1N5817 1N5818 1N5819 DO-41 J-STD-020C MIL-STD-202, 1N5817-A 1N5817-B 1N5817 SPICE 1N5819a 1n5818b PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device DO-41 Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. 1.000 25.40 Min. 0.034(0.90)


    Original     		1N5817-G 1N5819-G DO-41 DO-41 1N5818T-G 1N5819T-G 1N5817A-G 1N5818A-G 1N5819A-G 1N5817B-G PDF